SLLSEK2A June   2014  – March 2017 DRV8846

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 PWM Motor Drivers
      2. 7.3.2 Micro-Stepping Indexer
      3. 7.3.3 Current Regulation
      4. 7.3.4 Decay Mode
      5. 7.3.5 Blanking Time
      6. 7.3.6 Protection Circuits
        1. 7.3.6.1 Overcurrent Protection (OCP)
        2. 7.3.6.2 Thermal Shutdown (TSD)
        3. 7.3.6.3 Undervoltage Lockout (UVLO)
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Stepper Motor Speed
        2. 8.2.2.2 Current Regulation
        3. 8.2.2.3 Decay Modes
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6.5 Electrical Characteristics

TA = 25°C, over recommended operating conditions unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLIES (VM, VINT)
VM VM operating voltage 4 18 V
IVM VM operating supply current VM = 12 V, excluding winding current, nSLEEP = 1, nENBL = 0 or 1 3.5 4.5 5.5 mA
IVMQ VM sleep mode supply current VM = 12 V, nSLEEP = 0, nENBL = 0 or 1 0.5 1.2 3 μA
tSLEEP Sleep time nSLEEP = 0 to sleep mode 1 ms
tWAKE Wake time nSLEEP = 1 to output transition 1 ms
tON Power-on time VM > VUVLO rising to output transition 1 ms
VINT VINT voltage VM > 4 V, IOUT = 0 A to 1 mA 3.13 3.3 3.47 V
LOGIC-LEVEL INPUTS (STEP, DIR, nENBL, nSLEEP, ADEC)
VIL Input logic low voltage 0 0.7 V
VIH Input logic high voltage 1.6 5.5 V
VHYS Input logic hysteresis 100 mV
IIL Input logic low current VIN = 0 V –1 1 μA
IIH Input logic high current VIN = 5 V 1 30 μA
RPD Pulldown resistance nENBL, STEP, DIR, ADEC 200 kΩ
nSLEEP 500
tDEG Input deglitch time 200 ns
tPROP Propagation delay STEP edge to current change 600 ns
TRI-LEVEL INPUTS (I0, I1, M0, M1, DEC0, DEC1, TOFF_SEL)
VIL Tri-level input logic low voltage 0 0.7 V
VIZ Tri-level input Hi-Z voltage 1.1 V
VIH Tri-level input logic high voltage 1.6 5.5 V
VHYS Tri-level input hysteresis 100 mV
IIL Tri-level input logic low current VIN = 0 V –30 –1 μA
IIH Tri-level input logic high current VIN = 5 V 1 30 μA
RPD Tri-level pulldown resistance To GND 170 kΩ
RPU Tri-level pullup resistance To VINT 340 kΩ
CONTROL OUTPUTS (nFAULT)
VOL Output logic low voltage IO = 5 mA 0.5 V
IOH Output logic high leakage VO = 3.3 V –1 1 μA
MOTOR DRIVER OUTPUTS (AOUT1, AOUT2, BOUT1, BOUT2)
RDS(ON) High-side FET on resistance VM = 12 V, I = 0.5 A, TJ = 25°C 550 mΩ
VM = 12 V, I = 0.5 A, TJ = 85°C(1) 660
RDS(ON) Low-side FET on resistance VM = 12 V, I = 0.5 A, TJ = 25°C 350 mΩ
VM = 12 V, I = 0.5 A, TJ = 85°C(1) 420
IOFF Off-state leakage current VM = 5 V, TJ = 25°C –1 1 μA
tRISE Output rise time 60 ns
tFALL Output fall time 60 ns
tDEAD Output dead time Internal dead time 200 ns
PWM CURRENT CONTROL (VREF, AISEN, BISEN)
IREF Externally applied VREF input current VREF = 1 to 3.3 V 1 μA
VTRIP xISEN trip voltage For 100% current step with VREF = 3.3 V 500 mV
AISENSE Current sense amplifer gain Reference only 6.6 V/V
tOFF Current control constant off time TOFF_SEL = GND 20 μs
TOFF_SEL = Hi-Z 10
TOFF_SEL = VINT 30
PROTECTION CIRCUITS
VUVLO VM undervoltage lockout VM falling; UVLO report 2.9 V
VM rising; UVLO recovery 3
IOCP Overcurrent protection trip level 2 A
tOCP Overcurrent deglitch time 2.8 μs
tRETRY Overcurrent protection period 1.6 ms
TTSD Thermal shutdown temperature Die temperature TJ 150 160 180 °C
THYS Thermal shutdown hysteresis Die temperature TJ 50 °C
(1) Not tested in production; limits are based on characterization data