SLVSCY8B August   2015  – July 2016 DRV8870

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
      2.      H-Bridge States
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Bridge Control
      2. 7.3.2 Sleep Mode
      3. 7.3.3 Current Regulation
      4. 7.3.4 Dead Time
      5. 7.3.5 Protection Circuits
        1. 7.3.5.1 VM Undervoltage Lockout (UVLO)
        2. 7.3.5.2 Overcurrent Protection (OCP)
        3. 7.3.5.3 Thermal Shutdown (TSD)
    4. 7.4 Device Functional Modes
      1. 7.4.1 PWM With Current Regulation
      2. 7.4.2 PWM Without Current Regulation
      3. 7.4.3 Static Inputs With Current Regulation
      4. 7.4.4 VM Control
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Motor Voltage
        2. 8.2.2.2 Drive Current
        3. 8.2.2.3 Sense Resistor
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
    4. 10.4 Power Dissipation
      1. 10.4.1 Heatsinking
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DDA|8
サーマルパッド・メカニカル・データ
発注情報

6.5 Electrical Characteristics

TA = 25°C, over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLY (VM)
VM VM operating voltage 6.5 45 V
IVM VM operating supply current VM = 12 V 3 10 mA
IVMSLEEP VM sleep current VM = 12 V 10 µA
tON(1) Turn-on time VM > VUVLO with IN1 or IN2 high 40 50 µs
LOGIC-LEVEL INPUTS (IN1, IN2)
VIL Input logic low voltage 0.5 V
VIH Input logic high voltage 1.5 V
VHYS Input logic hysteresis 0.5 V
IIL Input logic low current VIN = 0 V –1 1 μA
IIH Input logic high current VIN = 3.3 V 33 100 μA
RPD Pulldown resistance to GND 100 kΩ
tPD Propagation delay INx to OUTx change (see Figure 6) 0.7 1 μs
tsleep Time to sleep Inputs low to sleep 1 1.5 ms
MOTOR DRIVER OUTPUTS (OUT1, OUT2)
RDS(ON) High-side FET on resistance VM = 24 V, I = 1 A, fPWM = 25 kHz 307 360 mΩ
RDS(ON) Low-side FET on resistance VM = 24 V, I = 1 A, fPWM = 25 kHz 258 320 mΩ
tDEAD Output dead time 220 ns
Vd Body diode forward voltage IOUT = 1 A 0.8 1 V
CURRENT REGULATION
AV ISEN gain VREF = 2.5 V 9.4 10 10.4 V/V
tOFF PWM off-time 25 µs
tBLANK PWM blanking time 2 µs
PROTECTION CIRCUITS
VUVLO VM undervoltage lockout VM falls until UVLO triggers 6.1 6.4 V
VM rises until operation recovers 6.3 6.5
VUV,HYS VM undervoltage hysteresis Rising to falling threshold 100 180 mV
IOCP Overcurrent protection trip level 3.7 4.5 6.4 A
tOCP Overcurrent deglitch time 1.5 μs
tRETRY Overcurrent retry time 3 ms
TSD Thermal shutdown temperature 150 175 °C
THYS Thermal shutdown hysteresis 40 °C
(1) tON applies when the device initially powers up, and when it exits sleep mode.