SLVSD19A June   2015  – July 2015 DRV8881

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      DRV8881E Simplified System Diagram
      2.      DRV8881P Simplified System Diagram
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
    2.     DRV8881E PH/EN Pin Functions
    3.     DRV8881P PWM Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1  Motor Driver Current Ratings
        1. 7.3.1.1 Peak Current Rating
        2. 7.3.1.2 RMS Current Rating
        3. 7.3.1.3 Full-Scale Current Rating
      2. 7.3.2  PWM Motor Drivers
      3. 7.3.3  Bridge Control
      4. 7.3.4  Current Regulation
      5. 7.3.5  Decay Modes
        1. 7.3.5.1 Mode 1: Slow Decay
        2. 7.3.5.2 Mode 2: Fast Decay
        3. 7.3.5.3 Mode 3: 30%/70% Mixed Decay
      6. 7.3.6  Smart tune
      7. 7.3.7  Adaptive Blanking Time
      8. 7.3.8  Parallel Mode
      9. 7.3.9  Charge Pump
      10. 7.3.10 LDO Voltage Regulator
      11. 7.3.11 Logic and Tri-Level Pin Diagrams
      12. 7.3.12 Protection Circuits
        1. 7.3.12.1 VM Undervoltage Lockout (UVLO)
        2. 7.3.12.2 VCP UVLO (CPUV)
        3. 7.3.12.3 Overcurrent Protection (OCP)
        4. 7.3.12.4 Thermal Shutdown (TSD)
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 DRV8881P Typical Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Current Regulation
          2. 8.2.1.2.2 Stepper Motor Speed
          3. 8.2.1.2.3 Decay Modes
          4. 8.2.1.2.4 Sense Resistor
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Alternate Application
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1 Current Regulation
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance Sizing
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

10.1 Layout Guidelines

Each VM terminal must be bypassed to GND using a low-ESR ceramic bypass capacitors with recommended values of 0.1 μF rated for VM. These capacitors should be placed as close to the VM pins as possible with a thick trace or ground plane connection to the device GND pin.

The VM pin must be bypassed to ground using a bulk capacitor rated for VM. This component may be an electrolytic.

A low-ESR ceramic capacitor must be placed in between the CPL and CPH pins. A value of 0.1 μF rated for VM is recommended. Place this component as close to the pins as possible.

A low-ESR ceramic capacitor must be placed in between the VM and VCP pins. A value of 0.47 μF rated for 16 V is recommended. Place this component as close to the pins as possible.

Bypass V3P3 to ground with a ceramic capacitor rated 6.3 V. Place this bypassing capacitor as close to the pin as possible.

The current sense resistors should be placed as close as possible to the device pins in order to minimize trace inductance between the pin and resistor.