JAJSGU9B September   2005  – January 2019 DS90LV028AH

PRODUCTION DATA.  

  1. 特長
  2. アプリケーション
  3. 概要
    1.     Device Images
      1.      接続図
      2.      機能図
  4. 改訂履歴
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Termination
      2. 8.3.2 Threshold
      3. 8.3.3 Fail-Safe Feature
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Receiver Bypass Capacitance
        2. 9.2.2.2 Interconnecting Media
        3. 9.2.2.3 PCB Transmission Lines
        4. 9.2.2.4 Input Fail-Safe Biasing
        5. 9.2.2.5 Probing LVDS Transmission Lines on PCB
        6. 9.2.2.6 Cables and Connectors, General Comments
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Microstrip vs. Stripline Topologies
      2. 11.1.2 Dielectric Type and Board Construction
      3. 11.1.3 Recommended Stack Layout
      4. 11.1.4 Separation Between Traces
      5. 11.1.5 Crosstalk and Ground Bounce Minimization
      6. 11.1.6 Decoupling
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 関連資料
    2. 12.2 ドキュメントの更新通知を受け取る方法
    3. 12.3 コミュニティ・リソース
    4. 12.4 商標
    5. 12.5 静電気放電に関する注意事項
    6. 12.6 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Thermal Information

THERMAL METRIC(1) DS90LV028AH UNIT
D (SOIC)
8 PINS
RθJA Junction-to-ambient thermal resistance 119.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 59.3 °C/W
RθJB Junction-to-board thermal resistance 62.2 °C/W
ψJT Junction-to-top characterization parameter 10.9 °C/W
ψJB Junction-to-board characterization parameter 61.6 °C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.