SNLS488 March   2016 DS90UB921-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings - JEDEC
    3. 6.3  ESD Ratings—IEC and ISO
    4. 6.4  Recommended Operating Conditions
    5. 6.5  Thermal Information
    6. 6.6  DC Electrical Characteristics
    7. 6.7  AC Electrical Characteristics
    8. 6.8  PCLK Timing Requirements
    9. 6.9  Recommended Timing for the Serial Control Bus
    10. 6.10 Switching Characteristics
    11. 6.11 Typical Charateristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  High Speed Forward Channel Data Transfer
      2. 7.3.2  Low Speed Back Channel Data Transfer
      3. 7.3.3  Common Mode Filter Pin (CMF)
      4. 7.3.4  Video Control Signal Filter
      5. 7.3.5  EMI Reduction Features
        1. 7.3.5.1 Input SSC Tolerance (SSCT)
      6. 7.3.6  LVCMOS VDDIO Option
      7. 7.3.7  Power Down (PDB)
      8. 7.3.8  Remote Auto Power-Down Mode
      9. 7.3.9  Input PCLK Loss Detect
      10. 7.3.10 Serial Link Fault Detect
      11. 7.3.11 Pixel Clock Edge Select (TRFB)
      12. 7.3.12 Frequency Mode Optimizations
      13. 7.3.13 Interrupt Pins - Funtional Description and Usage (INTB, REM_INTB)
      14. 7.3.14 Internal Pattern Generation
      15. 7.3.15 GPIO[3:0] and GPO_REG[7:4]
        1. 7.3.15.1 GPIO[3:0] Enable Sequence
        2. 7.3.15.2 GPO_REG[7:4] Enable Sequence
      16. 7.3.16 I2S Transmitting
      17. 7.3.17 Built In Self Test (BIST)
        1. 7.3.17.1 BIST Configuration and Status
          1. 7.3.17.1.1 Sample BIST Sequence
        2. 7.3.17.2 Forward Channel And Back Channel Error Checking
    4. 7.4 Device Functional Modes
      1. 7.4.1 Configuration Select (MODE_SEL)
      2. 7.4.2 Repeater Application
        1. 7.4.2.1 Repeater Configuration
        2. 7.4.2.2 Repeater Connections
    5. 7.5 Programming
    6. 7.6 Register Maps
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 AVMUTE Operation
    3. 8.3 Typical Application
      1. 8.3.1 Design Requirements
      2. 8.3.2 Detailed Design Procedure
      3. 8.3.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Power Up Requirements and PDB Pin
    2. 9.2 CML Interconnect Guidelines
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

11 Device and Documentation Support

11.1 Documentation Support

11.1.1 Related Documentation

  • AN-2198 Exploring the Internal Test Pattern Generation SNLA132
  • AN-1108 Channel-Link PCB and Interconnect Design-In Guidelines SNLA008
  • SCAN18245T Non-Inverting Transceiver with TRI-STATE Outputs SNLA035
  • TI Interface Website www.ti.com/lvds
  • AN-1187 Leadless Leadframe Package (LLP) SNOA401
  • Semiconductor and IC Package Thermal Metrics SPRA953

11.2 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

11.3 Trademarks

E2E is a trademark of Texas Instruments.

11.4 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

11.5 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.