JAJSVN1 November   2024 ESD501-Q1

PRODUCTION DATA  

  1.   1
  2. 1特長
  3. 2アプリケーション
  4. 3概要
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings - AEC Specifications
    3. 5.3 ESD Ratings - IEC Specifications
    4. 5.4 ESD Ratings - ISO Specifications
    5. 5.5 Recommended Operating Conditions
    6. 5.6 Thermal Information
    7. 5.7 Electrical Characteristics
    8. 5.8 Typical Characteristics
  7. 6Device and Documentation Support
    1. 6.1 ドキュメントの更新通知を受け取る方法
    2. 6.2 サポート・リソース
    3. 6.3 Trademarks
    4. 6.4 静電気放電に関する注意事項
    5. 6.5 用語集
  8. 7Revision History
  9. 8Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

5.7 Electrical Characteristics

At TA = 25°C unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VRWM Reverse stand-off voltage IIO < 10 nA -12 12 V
ILEAK Leakage current at VRWM VIO = ±12 V, I/O to GND 1 10 nA
VBR Breakdown voltage, I/O to GND (1) IIO = ±1 mA 13.2 15 18 V
VCLAMP Surge clamping voltage, tp = 8/20 µs (2) IPP = 3 A, I/O to GND 23 V
IPP = 3 A, GND to I/O 23 V
TLP clamping voltage, tp = 100 ns (3) IPP = ±4 A (100 ns TLP), I/O to GND 19.4 V
IPP = ±16 A (100 ns TLP), I/O to GND 27 V
RDYN Dynamic resistance (4) I/O to GND 0.6 Ω
GND to I/O 0.6
CLINE Line capacitance, IO to GND VIO = 0 V, f = 1 MHz 0.3 0.5 pF
(1) VBR is defined as the voltage obtained at 1 mA when sweeping the voltage up, before the device enters the snapback state
(2) Device stressed with 8/20 µs exponential decay waveform according to IEC 61000-4-5
(3) Non-repetitive square wave current pulse, Transmission Line Pulse (TLP);  ANSI / ESD STM5.5.1-2008
(4) Extraction of RDYN using least squares fit of TLP characteristics between I = 10 A and I = 20 A