JAJSTH0 March   2024 ESDS452

PRODUCTION DATA  

  1.   1
  2. 1特長
  3. 2アプリケーション
  4. 3概要
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings -JEDEC Specifications
    3. 5.3 ESD Ratings - IEC Specifications
    4. 5.4 Recommended Operating Conditions
    5. 5.5 Thermal Information
    6. 5.6 Electrical Characteristics
    7. 5.7 Typical Characteristics
  7. 6Application and Implementation
    1. 6.1 Application Information
  8. 7Device and Documentation Support
    1. 7.1 Documentation Support
      1. 7.1.1 Related Documentation
    2. 7.2 ドキュメントの更新通知を受け取る方法
    3. 7.3 サポート・リソース
    4. 7.4 Trademarks
    5. 7.5 静電気放電に関する注意事項
    6. 7.6 用語集
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DBZ|3
サーマルパッド・メカニカル・データ
発注情報

5.6 Electrical Characteristics

At TA = 25°C unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VRWM Reverse stand-off voltage IIO < 50nA -5.5 5.5 V
ILEAK Leakage current at VRWM VIO = ±5.5 V, I/O to GND and GND to I/O 1 50 nA
VBR Breakdown voltage, I/O to GND (1) IIO = ±1mA 7 8 9 V
VCLAMP Surge clamping voltage, tp = 8/20 µs (2) IPP = ±1 A, I/O to GND 7.5 10 V
VCLAMP Surge clamping voltage, tp = 8/20 µs (2) IPP = ±15 A, I/O to GND 11.5 14 V
VCLAMP TLP clamping voltage, tp = 100ns (3) IPP = ±16 A, I/O to GND 9.6 V
RDYN Dynamic resistance (4) I/O to GND 0.29 Ω
GND to I/O 0.29
CLINE Line capacitance, IO to GND VIO = 0 V, f = 1 MHz 3 5 pF
(1) VBR is defined as the voltage when ±1mA is applied in the positive or negative direction respectively.
(2) Device stressed with 8/20 µs exponential decay waveform according to IEC 61000-4-5
(3) Non-repetitive square wave current pulse, Transmission Line Pulse (TLP);  ANSI / ESD STM5.5.1-2008
(4) 8/20 µs (IEC 61000-4-5) dynamic resistance