SNAS649B October   2014  – December 2015 HDC1008

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Typical Application
  5. 5 Revision History
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 I2C Interface Electrical Characteristics
    7. 7.7 I2C Interface Timing Requirements
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power Consumption
      2. 8.3.2 Voltage Supply Monitoring
      3. 8.3.3 Heater
    4. 8.4 Device Functional Modes
    5. 8.5 Programming
      1. 8.5.1 I2C Serial Bus Address Configuration
      2. 8.5.2 I2C Interface
        1. 8.5.2.1 Serial Bus Address
        2. 8.5.2.2 Read and Write Operations
        3. 8.5.2.3 Device Measurement Configuration
    6. 8.6 Register Map
      1. 8.6.1 Temperature Register
      2. 8.6.2 Humidity Register
      3. 8.6.3 Configuration Register
      4. 8.6.4 Serial Number Registers
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
    3. 9.3 Do's and Don'ts
      1. 9.3.1 Soldering
      2. 9.3.2 Hydration Procedure
      3. 9.3.3 Chemical Exposure
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Surface Mount
      2. 11.1.2 Stencil Printing Process
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7 Specifications

7.1 Absolute Maximum Ratings(1)

MIN MAX UNIT
Input Voltage VDD -0.3 6 V
SCL -0.3 6
SDA -0.3 6
DRDYn -0.3 6
ADR0 -0.3 VDD+0.3
ADR1 -0.3 VDD+0.3
Storage Temperature TSTG(2) -65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) For long term storage, it is recommended to stay within 10%RH-80%RH and +5°C to 60°C. Storage beyond this range may result in a temporary RH offset shift.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) ±1000 V
Charged device model (CDM), per JEDEC specification –500 500 JESD22-C101, all pins (2) ±250
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating range (unless otherwise noted)
MIN NOM MAX UNIT
VDD Supply Voltage 2.7 3 5.5 V
TA, Temperature Sensor Ambient Operating Temperature -40 125 °C
TA, Humidity Sensor Ambient Operating Temperature -20 60 °C

7.4 Thermal Information

THERMAL METRIC(1) HDC1008 UNIT
DSBGA (YPA)
8 PINS
RθJA Junction-to-Ambient Thermal Resistance 98.0 °C/W
(1) For more information about traditional and new thermal metrics, see the: IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

The electrical ratings specified in this section apply to all specifications in this document, unless otherwise noted. TA = 30°C, VDD = 3V, and RH = 40%.
PARAMETER TEST CONDITION MIN TYP MAX UNIT
POWER CONSUMPTION
IDD Supply Current RH measurement, bit 12 of 0x02 register = 0(6) 180 220 µA
Temperature measurement, bit 12 of 0x02 register = 0(6) 155 185 µA
Sleep Mode 110 200 nA
Average @ 1 measurement/second, RH (11 bit), bit 12 of 0x02 register = 0(6)(7) 730 nA
Average @ 1 measurement/second, Temp (11 bit), bit 12 of 0x02 register = 0(6)(7) 580 nA
Average @ 1 measurement/second, RH (11bit) +temperature (11 bit), bit 12 of 0x02 register = 1(6)(7) 1.2 µA
Startup (average on Start-up time) 300 µA
IHEAT Heater Current(1) Peak current 7.6 mA
Average @ 1 measurement/second, RH (11bit) +temperature (11 bit), bit 12 of 0x02 register = 1(6)(7) 57 µA
RELATIVE HUMIDITY SENSOR
RHACC Accuracy Refer to Figure 2 in Typical Characteristics section. ±4 %RH
RHREP Repeatability(1) 0%RH ±0.1 %RH
RHHYS Hysteresis (3) 20% ≤ RH ≤ 60% ±1 %RH
RHRT Response Time(5) t 63% (4) 15 s
RHCT Conversion Time(1) 8 bit resolution 2.50 ms
11 bit resolution 3.85 ms
14 bit resolution 6.50 ms
RHHOR Operating Range(2) Non-condensing 0 100 %RH
RHLTD Long Term Drift ±0.5 %RH/yr
TEMPERATURE SENSOR
TEMPACC Accuracy(1) 5°C < TA< 60°C ±0.2 ±0.4 °C
TEMPREP Repeatability(1) ±0.1 °C
TEMPCT Conversion Time(1) 11 bit accuracy 3.65 ms
14 bit accuracy 6.35 ms
TEMPOR Operating Range -40 125 °C
(1) This parameter is specified by design and/or characterization and it is not tested in production.
(2) Recommended humidity operating range is 20% to 60% RH. Prolonged operation outside this range may result in a measurement offset. The measurement offset will decrease after operating the sensor in this recommended operating range.
(3) The hysteresis value is the difference between an RH measurement in a rising and falling RH environment, at a specific RH point.
(4) Time for the RH output to change by 63% of the total RH change after a step change in environmental humidity.
(5) Actual response times will vary dependent on system thermal mass and air-flow.
(6) I2C read/write communication and pull-up resistors current through SCL, SDA and DRDYn not included.
(7) Average current consumption while conversion is in progress.

7.6 I2C Interface Electrical Characteristics

At TA=30°C, VDD=3V (unless otherwise noted)
PARAMETER TEST CONDITION MIN TYP MAX UNIT
I2C INTERFACE VOLTAGE LEVEL
VIH Input High Voltage 0.7xVDD V
VIL Input Low Voltage 0.3xVDD V
VOL Output Low Voltage Sink current 3mA 0.4 V
HYS Hysteresis (1) 0.1xVDD V
CIN Input Capacitance on all digital pins 0.5 pF
(1) This parameter is specified by design and/or characterization and it is not tested in production.

7.7 I2C Interface Timing Requirements

PARAMETER TEST CONDITION MIN TYP MAX UNIT
I2C INTERFACE VOLTAGE LEVEL
fSCL Clock Frequency 10 400 kHz
tLOW Clock Low Time 1.3 µs
tHIGH Clock High Time 0.6 µs
tSP Pulse width of spikes that must be suppressed by the input filter (1) 50 ns
tSTART Device Start-up time From VDD ≥ 2.7 V to ready for a conversion(1)(2) 10 15 ms
(1) This parameter is specified by design and/or characterization and it is not tested in production.
(2) Within this interval it is not possible to communicate to the device.
HDC1008 REDUCED_TIMING_FINAL.gif Figure 1. I2C Timing

7.8 Typical Characteristics

Unless otherwise noted, TA = 30°C, VDD = 3V.
HDC1008 D029_SNAS643.gif
Figure 2. RH Accuracy vs. RH
HDC1008 D022_SNAS643.gif
Figure 4. Supply Current vs. Supply Voltage, RH Measurement
HDC1008 D023_SNAS643.gif
Figure 6. Supply Current vs. Supply Voltage, Temp Measurement
HDC1008 D024_SNAS643.gif
Figure 8. Supply Current vs. Supply Voltage, Sleep Mode
HDC1008 D028_SNAS643.gif
Figure 3. Temperature Accuracy vs. Temperature
HDC1008 D025_SNAS643.gif
Figure 5. Supply Current vs. Temperature, RH Measurement
HDC1008 D026_SNAS643.gif
Figure 7. Supply Current vs. Temperature, Temp Measurement
HDC1008 D027_SNAS643.gif
Figure 9. Supply Current vs. Temperature, Sleep Mode