JAJSHG9A May 2019 – March 2022 INA190-Q1
PRODUCTION DATA
PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
INPUT | |||||||
CMRR | Common-mode rejection ratio | VSENSE = 0 mV, VIN+ = –0.1 V to 40 V, TA = –40°C to +125°C | 132 | 150 | dB | ||
VOS | Offset voltage, RTI(1) | VS = 1.8 V, VSENSE = 0 mV | –3 | ±15 | µV | ||
dVOS/dT | Offset drift, RTI | VSENSE = 0 mV, TA = –40°C to +125°C | 10 | 80 | nV/°C | ||
PSRR | Power-supply rejection ratio, RTI | VSENSE = 0 mV, VS = 1.7 V to 5.5 V | –1 | ±5 | µV/V | ||
IIB | Input bias current | VSENSE = 0 mV | 0.5 | 3 | nA | ||
IIO | Input offset current | VSENSE = 0 mV | ±0.07 | nA | |||
OUTPUT | |||||||
G | Gain | A1 devices | 25 | V/V | |||
A2 devices | 50 | ||||||
A3 devices | 100 | ||||||
A4 devices | 200 | ||||||
A5 devices | 500 | ||||||
EG | Gain error | VOUT = 0.1 V to VS – 0.1 V | A1 devices | –0.04% | ±0.2% | ||
A2, A3, A4 devices | –0.06% | ±0.3% | |||||
A5 devices | –0.08% | ±0.4% | |||||
Gain error drift | TA = –40°C to +125°C | 2 | 7 | ppm/°C | |||
Nonlinearity error | VOUT = 0.1 V to VS – 0.1 V | ±0.01% | |||||
RVRR | Reference voltage rejection ratio | VREF = 100 mV to VS – 100 mV, TA = –40°C to +125°C |
A1 devices | ±2 | ±10 | µV/V | |
A2 devices | ±1 | ±6 | |||||
A3 devices | ±0.5 | ±4 | |||||
A4, A5 devices | ±0.25 | ±3 | |||||
Maximum capacitive load | No sustained oscillation | 1 | nF | ||||
VOLTAGE OUTPUT | |||||||
VSP | Swing to VS power-supply rail | VS = 1.8 V, RL = 10 kΩ to GND, TA = –40°C to +125°C | (VS) – 20 | (VS) – 40 | mV | ||
VSN | Swing to GND | VS = 1.8 V, RL = 10 kΩ to GND, TA = –40°C to +125°C, VSENSE = –10 mV, VREF = 0 V |
(VGND) + 0.05 | (VGND) + 1 | mV | ||
VZL | Zero current output voltage | VS = 1.8 V, RL = 10 kΩ to GND, TA = –40°C to +125°C, VSENSE = 0 mV, VREF = 0 V |
A1, A2, A3 devices | (VGND) + 1 | (VGND) + 3 | mV | |
A4 devices | (VGND) + 2 | (VGND) + 4 | mV | ||||
A5 devices | (VGND) + 3 | (VGND) + 9 | mV | ||||
FREQUENCY RESPONSE | |||||||
BW | Bandwidth | A1 devices, CLOAD = 10 pF | 45 | kHz | |||
A2 devices, CLOAD = 10 pF | 37 | ||||||
A3 devices, CLOAD = 10 pF | 35 | ||||||
A4 devices, CLOAD = 10 pF | 33 | ||||||
A5 devices, CLOAD = 10 pF | 27 | ||||||
SR | Slew rate | VS = 5.0 V, VOUT = 0.5 V to 4.5 V | 0.3 | V/µs | |||
tS | Settling time | From current step to within 1% of final value | 30 | µs | |||
NOISE, RTI(1) | |||||||
Voltage noise density | 75 | nV/√Hz | |||||
ENABLE | |||||||
IEN | Leakage input current | 0 V ≤ VENABLE ≤ VS | 1 | 100 | nA | ||
VIH | High-level input voltage | 0.7 × VS | 6 | V | |||
VIL | Low-level input voltage | 0 | 0.3 × VS | V | |||
VHYS | Hysteresis | 300 | mV | ||||
IODIS | Output leakage disabled | VS = 5.0 V, VOUT = 0 V to 5.0 V, VENABLE = 0 V | 1 | 5 | µA | ||
POWER SUPPLY | |||||||
IQ | Quiescent current | VS = 1.8 V, VSENSE = 0 mV | 48 | 65 | µA | ||
VS = 1.8 V, VSENSE = 0 mV, TA = –40°C to +125°C | 90 | µA | |||||
IQDIS | Quiescent current disabled | VENABLE = 0 V, VSENSE = 0 mV | 10 | 100 | nA |