JAJSN53A February   2012  – December 2021 INA230

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Related Products
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements (I2C)
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Basic ADC Functions
      2. 8.3.2 Power Calculation
      3. 8.3.3 Alert Pin
    4. 8.4 Device Functional Modes
      1. 8.4.1 Averaging and Conversion Time Considerations
      2. 8.4.2 Filtering and Input Considerations
    5. 8.5 Programming
      1. 8.5.1 Programming the Calibration Register
      2. 8.5.2 Programming the INA230 Power Measurement Engine
        1. 8.5.2.1 Calibration Register and Scaling
      3. 8.5.3 Simple Current Shunt Monitor Usage (No Programming Necessary)
      4. 8.5.4 Default INA230 Settings
      5. 8.5.5 Bus Overview
        1. 8.5.5.1 Serial Bus Address
        2. 8.5.5.2 Serial Interface
      6. 8.5.6 Writing to and Reading From the I2C Serial Interface
        1. 8.5.6.1 High-Speed I2C Mode
      7. 8.5.7 SMBus Alert Response
    6. 8.6 Register Maps
      1. 8.6.1 Configuration Register (00h, Read/Write)
      2. 8.6.2 AVG Bit Settings [11:9]
      3. 8.6.3 VBUS CT Bit Settings [8:6]
      4. 8.6.4 VSH CT Bit Settings [5:3]
      5. 8.6.5 Mode Settings [2:0]
      6. 8.6.6 Data Output Register
        1. 8.6.6.1 Shunt Voltage Register (01h, Read-Only)
        2. 8.6.6.2 Bus Voltage Register (02h, Read-Only) (1)
        3. 8.6.6.3 Power Register (03h, Read-Only)
        4. 8.6.6.4 Current Register (04h, Read-Only)
        5. 8.6.6.5 Calibration Register (05h, Read/Write)
        6. 8.6.6.6 Mask/Enable Register (06h, Read/Write)
        7. 8.6.6.7 Alert Limit Register (07h, Read/Write)
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 High-Side Sensing Circuit Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 サポート・リソース
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

12.5 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.