JAJSIY5C July   2016  – September 2023 INA250-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Integrated Shunt Resistor
      2. 7.3.2 Short-Circuit Duration
      3. 7.3.3 Temperature Stability
    4. 7.4 Device Functional Modes
      1. 7.4.1 Amplifier Operation
      2. 7.4.2 Input Filtering
        1. 7.4.2.1 Calculating Gain Error Resulting from External Filter Resistance
      3. 7.4.3 Shutting Down the Device
      4. 7.4.4 Using the Device with Common-Mode Transients Above 36 V
  9. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Current Summing
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Parallel Multiple INA250-Q1 Devices for Higher Current
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curve
      3. 8.2.3 Current Differencing
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
        3. 8.2.3.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 ドキュメントの更新通知を受け取る方法
    3. 9.3 サポート・リソース
    4. 9.4 Trademarks
    5. 9.5 静電気放電に関する注意事項
    6. 9.6 用語集
  11. 10Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

4 Revision History

Changes from Revision B (April 2020) to Revision C (September 2023)

  • ドキュメント全体にわたって表、図、相互参照の採番方法を変更Go
  • 「製品情報」表を「パッケージ情報」に変更 Go
  • Changed the Shunt resistance (SH+ to SH–) minimum value for use as stand-alone resistor from: 1.9 mΩ to 1.8 mΩ in the Electrical Characteristics tableGo
  • Changed the Shunt resistance (SH+ to SH–) minimum value for use as stand-alone resistor from: 2.1 mΩ to 2.2 mΩ in the Electrical Characteristics tableGo

Changes from Revision A (November 2016) to Revision B (April 2020)

  • 機能安全対応の情報を追加Go

Changes from Revision * (July 2016) to Revision A (November 2016)

  • ドキュメントのステータスを「製品プレビュー」から「量産データ」に変更Go
  • Changed maximum charged-device model ESD value from ±750 to ±1000 Go
  • Changed maximum IB values in the Electrical Characteristics table from ±35 to ±40Go