JAJSM04A june   2021  – march 2023 INA254

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 仕様
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Integrated Shunt Resistor
      2. 8.3.2 Short-Circuit Duration
      3. 8.3.3 Temperature Stability
      4. 8.3.4 Enhanced PWM Rejection Operation
      5. 8.3.5 Input Signal Bandwidth
    4. 8.4 Device Functional Modes
      1. 8.4.1 Adjusting the Output Midpoint With the Reference Pins
      2. 8.4.2 Reference Pin Connections for Unidirectional Current Measurements
      3. 8.4.3 Ground Referenced Output
      4. 8.4.4 Reference Pin Connections for Bidirectional Current Measurements
        1. 8.4.4.1 Output Set to External Reference Voltage
      5. 8.4.5 Output Set to Mid-Supply Voltage
      6. 8.4.6 Output Set to Mid-External Reference
      7. 8.4.7 Output Set Using Resistor Divider
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Input Filtering
    2. 9.2 Typical Applications
      1. 9.2.1 Speaker Enhancements and Diagnostics Using Current Sense Amplifier
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Development Support
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 ドキュメントの更新通知を受け取る方法
    4. 10.4 サポート・リソース
    5. 10.5 Trademarks
    6. 10.6 静電気放電に関する注意事項
    7. 10.7 用語集
  11. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.5 Electrical Characteristics

at TA = 25 °C, VS = 5 V, ISENSE = IS+ = 0 A, VCM = 12 V, and VREF1 = VREF2 = VS / 2 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
VCM Common-mode input range VIN+ = –4V to 80V, ISENSE =0A,
TA = – 40°C to +125°C		 –4 80 V
CMRR Common-mode rejection ratio VIN+ = –4V to 80V, ISENSE =0A,
TA = –40°C to +125°C		 ±0.5 ±2.5 mA/V
f = 50 kHz ±56 mA/V
Ios Offset current, input referred ISENSE = 0 A ±62.5 mA
dIos/dT Offset current drift ISENSE = 0 A, TA = –40°C to +125°C ±0.625 mA/°C
PSRR Power supply rejection ratio VS = 2.7 V to 5.5 V, ISENSE = 0 A ±25 mA/V
IB Input bias current IB+, IB-, ISENSE = 0 A 90 µA
INTEGRATED SHUNT RESISTOR
RSHUNT Shunt resistance (IN+ to IN-) Equivalent resistance when used with onboard amplifier 0.398 0.4 0.402 mΩ
Used as stand-alone resistor 0.4 mΩ
Package resistance IS+ to IS- 1 mΩ
Package inductance IS+ to IS- 2 nH
Resistor temperature coefficient TA = –40°C to +125°C 15 ppm/°C
TA = –40°C to 0°C 50
TA = 0°C to +125°C 10
ISENSE Maximum Continuous Current TA = –40°C to +85°C ±50 A
Shunt short time overload ISENSE = 120 A for 5 seconds ± 0.05% %
Shunt temperature cycle –65°C to 150°C, 500 cycles ± 0.1 %
Shunt resistance to solder heat 260°C solder, 10 seconds ± 0.1 %
Shunt high temperature exposure 1000 hours, TA = 150°C ± 0.3 %
Shunt cold temperature storage 24 hours, TA = –65°C ± 0.060 %
OUTPUT
G Gain INA254A1 20 mV/A
INA254A2 40 mV/A
INA254A3 75 mV/A
System Gain error (shunt + amplifier) GND + 50 mV ≤ VOUT  ≤ VS – 200 mV,
TA = 25°C		 ±0.05 ±0.5 %
TA = –40°C to +125°C ±45 ppm/°C
Non-Linearity Error GND + 10 mV ≤ VOUT ≤ VS – 200 mV ±0.01 %
Reference Divider Accuracy VOUT = |(VREF1 – VREF2)| / 2
at ISENSE = 0 A, TA = –40°C to +125°C		 ±0.02 ±0.1 %
RVRR Reference voltage rejection ratio (input - referred) 12.5 mA/V
Maximum capacitive load No sustained oscillation 1 nF
VOLTAGE OUTPUT
Swing to Vs Power Supply Rail RL = 10 kΩ to GND,TA = –40°C to +125°C VS – 0.05 VS – 0.2 V
Swing to Ground RL = 10 kΩ to GND, TA = –40°C to +125°C VGND + 1 VGND + 10 mV
FREQUENCY RESPONSE
BW Bandwidth All devices, -3dB Bandwidth 350 kHz
All devices, 2% THD+N  100 kHz
Settling time VIN+, VIN- = 12 V, ISENSE = 50 A Output settles to 1% 2 µs
SR Slew Rate 2.4 V/µs
NOISE
Current Noise Density 100 µA/√Hz
POWER SUPPLY
IQ Quiescent current 1.8 2.4 mA
TA = –40°C to+125°C 2.6 mA