JAJSQA8 june   2023 INA351A

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Revision History
  6. 5 Device Comparison Table
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Gain-Setting
        1. 8.3.1.1 Gain Error and Drift
      2. 8.3.2 Input Common-Mode Voltage Range
      3. 8.3.3 EMI Rejection
      4. 8.3.4 Typical Specifications and Distributions
      5. 8.3.5 Electrical Overstress
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Reference Amplifier
      2. 9.1.2 Input Bias Current Return Path
    2. 9.2 Typical Applications
      1. 9.2.1 Resistive-Bridge Pressure Sensor
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Development Support
        1. 10.1.1.1 PSpice® for TI
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 ドキュメントの更新通知を受け取る方法
    4. 10.4 サポート・リソース
    5. 10.5 Trademarks
    6. 10.6 静電気放電に関する注意事項
    7. 10.7 用語集
  12. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.4 Thermal Information

THERMAL METRIC(1) INA351A UNIT
DSG (WSON)
8 PINS
RθJA Junction-to-ambient thermal resistance 80.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 100.4 °C/W
RθJB Junction-to-board thermal resistance 46.4 °C/W
ψJT Junction-to-top characterization parameter 5.3 °C/W
ψJB Junction-to-board characterization parameter 46.4 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 21.9 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.