INA819 は、単一電源またはデュアル電源の非常に幅広い電圧範囲で動作する、低消費電力の高精度計装アンプです。1 個の外付け抵抗により、1~10,000 の範囲で任意のゲインを設定できます。このデバイスは、入力オフセット電圧、オフセット電圧ドリフト、入力バイアス電流、入力電圧ノイズ、入力電流ノイズを極めて低く抑えるスーパーβ入力トランジスタを使用することで、高い精度を実現します。追加回路により、±60V までの過電圧から入力を保護します。
INA819 は、非常に高い同相除去比を実現するよう最適化されています。G = 1 での同相除去比は、全入力同相範囲を通じて 90dB を上回ります。このデバイスは、4.5V 単一電源および最大 ±18V のデュアル電源による低電圧動作用に設計されています。
INA819 は 8 ピン SOIC、VSSOP、WSON パッケージで供給され、-40℃~+125℃の温度範囲で動作が規定されています。
部品番号 | パッケージ | 本体サイズ (公称) |
---|---|---|
INA819 | SOIC (8) | 4.90mm × 3.91mm |
VSSOP (8) | 3.00mm × 3.00mm | |
WSON (8) | 3.00mm × 3.00mm |
Changes from Revision C (June 2020) to Revision D (April 2022)
Changes from Revision B (July 2019) to Revision C (June 2020)
Changes from Revision A (May 2019) to Revision B (July 2019)
DEVICE | DESCRIPTION | GAIN EQUATION | RG PINS AT PIN |
---|---|---|---|
INA819 | 35-µV Offset, 0.4-µV/°C VOS Drift, 8-nV/√ Hz Noise, Low-Power, Precision Instrumentation Amplifier | G = 1 + 50 kΩ / RG | 2, 3 |
INA818 | 35-µV Offset, 0.4-µV/°C VOS Drift, 8-nV/√ Hz Noise, Low-Power, Precision Instrumentation Amplifier | G = 1 + 50 kΩ / RG | 1, 8 |
INA821 | 35-µV Offset, 0.4-µV/°C VOS Drift, 7-nV/√ Hz Noise, High-Bandwidth, Precision Instrumentation Amplifier | G = 1 + 49.4 kΩ / RG | 2, 3 |
INA828 | 50-µV Offset, 0.5-µV/°C VOS Drift, 7-nV/√ Hz Noise, Low-Power, Precision Instrumentation Amplifier | G = 1 + 50 kΩ / RG | 1, 8 |
INA333 | 25-µV VOS, 0.1-µV/°C VOS Drift, 1.8-V to 5-V, RRO, 50-µA IQ, Chopper-Stabilized INA | G = 1 + 100 kΩ / RG | 1, 8 |
PGA280 | 20-mV to ±10-V Programmable Gain IA With 3-V or 5-V Differential Output; Analog Supply up to ±18 V | Digital programmable | N/A |
INA159 | G = 0.2 V Differential Amplifier for ±10-V to 3-V and 5-V Conversion | G = 0.2 V/V | N/A |
PGA112 | Precision Programmable Gain Op Amp With SPI | Digital programmable | N/A |
PIN | TYPE | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
–IN | 1 | Input | Negative (inverting) input |
+IN | 4 | Input | Positive (noninverting) input |
OUT | 7 | Output | Output |
RG | 2, 3 | — | Gain setting pin. Place a gain resistor between pin 2 and pin 3. |
REF | 6 | Input | Reference input. This pin must be driven by a low impedance source. |
–VS | 5 | — | Negative supply |
+VS | 8 | — | Positive supply |
Thermal pad | — | — | Thermal pad internally connected to –VS. Connect externally to –VS or leave floating. |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Supply voltage dual supply, VS = (V+) – (V–) | ±20 | V | ||
Supply voltage single supply, VS = (V+) – (V–) | 40 | V | ||
Signal input pins | –60 | 60 | V | |
VREF pin | –20 | 20 | V | |
Signal output pins maximum voltage | (–Vs) – 0.5 | (+Vs) + 0.5 | V | |
Signal output pins maximum current | –50 | 50 | mA | |
Output short-circuit(2) | Continuous | |||
Operating Temperature, TA | –50 | 150 | °C | |
Junction Temperature, TJ | 175 | °C | ||
Storage Temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±1500 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±750 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Supply voltage, VS | Single-supply | 4.5 | 36 | V |
Dual-supply | ±2.25 | ±18 | ||
Specified temperature, TA | Specified temperature | –40 | 125 | °C |
THERMAL METRIC(1) | INA819 | UNIT | |||
---|---|---|---|---|---|
D (SOIC) | DGK (VSSOP) | DRG (WSON) | |||
8 PINS | 8 PINS | 8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 119.6 | 215.4 | 55.6 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 66.3 | 66.3 | 57.9 | °C/W |
RθJB | Junction-to-board thermal resistance | 61.9 | 97.8 | 28.6 | °C/W |
ψJT | Junction-to-top characterization parameter | 20.5 | 10.5 | 1.8 | °C/W |
ψJB | Junction-to-board characterization parameter | 61.4 | 96.1 | 28.6 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | N/A | 12.1 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
INPUT | |||||||
VOSI | Input stage offset voltage(1)(3) | INA819ID | 10 | 35 | µV | ||
INA819IDGK | 40 | ||||||
INA819IDRG | 6 | 30 | |||||
TA = –40°C to +125°C(2) | INA819ID, INA819DRG | 75 | |||||
INA819IDGK | 80 | ||||||
vs temperature, TA = –40°C to +125°C |
INA819D, INA819DGK | 0.4 | µV/°C | ||||
INA819DRG | 0.35 | ||||||
VOSO | Output stage offset voltage(1)(3) | 50 | 300 | µV | |||
TA = –40°C to +125°C(2) | 800 | ||||||
vs temperature, TA = –40°C to +125°C | 5 | µV/°C | |||||
PSRR | Power-supply rejection ratio | G = 1, RTI | 110 | 120 | dB | ||
G = 10, RTI | 114 | 130 | |||||
G = 100, RTI | 130 | 135 | |||||
G = 1000, RTI | 136 | 140 | |||||
zid | Differential impedance | 100 || 1 | GΩ || pF | ||||
zic | Common-mode impedance | 100 || 4 | GΩ || pF | ||||
RFI filter, –3-dB frequency | 32 | MHz | |||||
VCM | Operating input range(4) | (V–) + 2 | (V+) – 2 | V | |||
VS = ±2.25 V to ±18 V, TA = –40°C to +125°C | See Figure 7-51 through Figure 7-54 | ||||||
Input overvoltage range | TA = –40°C to +125°C(2) | ±60 | V | ||||
CMRR | Common-mode rejection ratio | At DC to 60 Hz, RTI, VCM = (V–) + 2 V to (V+) – 2 V, G = 1 |
90 | 105 | dB | ||
At DC to 60 Hz, RTI, VCM = (V–) + 2 V to (V+) – 2 V, G = 10 |
110 | 125 | |||||
At DC to 60 Hz, RTI, VCM = (V–) + 2 V to (V+) – 2 V, G = 100 |
130 | 145 | |||||
At DC to 60 Hz, RTI, VCM = (V–) + 2 V to (V+) – 2 V, G = 1000 |
140 | 150 | |||||
BIAS CURRENT | |||||||
IB | Input bias current | VCM = VS / 2 | 0.15 | 0.5 | nA | ||
TA = –40°C to +125°C | 2 | ||||||
IOS | Input offset current | VCM = VS / 2 | 0.15 | 0.5 | nA | ||
TA = –40°C to +125°C | 2 | ||||||
NOISE VOLTAGE | |||||||
eNI | Input stage voltage noise(6) | f = 1 kHz, G = 100, RS = 0 Ω | 8 | nV/√Hz | |||
fB = 0.1 Hz to 10 Hz, G = 100, RS = 0 Ω | 0.19 | µVPP | |||||
eNO | Output stage voltage noise(6) | f = 1 kHz, RS = 0 Ω | 80 | nV/√Hz | |||
fB = 0.1 Hz to 10 Hz, RS = 0 Ω | 2.6 | µVPP | |||||
In | Noise current | f = 1 kHz | 130 | fA/√Hz | |||
fB = 0.1 Hz to 10 Hz, G = 100 | 4.7 | pAPP | |||||
GAIN | |||||||
Gain equation | 1 + (50 kΩ / RG) | V/V | |||||
G | Gain | 1 | 10000 | V/V | |||
GE | Gain error | G = 1, VO = ±10 V | ±0.005% | ±0.025% | |||
G = 10, VO = ±10 V | ±0.025% | ±0.15% | |||||
G = 100, VO = ±10 V | ±0.025% | ±0.15% | |||||
G = 1000, VO = ±10 V | ±0.05% | ||||||
Gain vs temperature(5) | G = 1, TA = –40°C to +125°C | ±5 | ppm/°C | ||||
G > 1, TA = –40°C to +125°C | ±35 | ||||||
Gain nonlinearity | G = 1 to 10, VO = –10 V to +10 V, RL = 10 kΩ | 1 | 10 | ppm | |||
G = 100, VO = –10 V to +10 V, RL = 10 kΩ | 15 | ||||||
G = 1000, VO = –10 V to +10 V, RL = 10 kΩ | 10 | ||||||
G = 1 to 100, VO = –10 V to +10 V, RL = 2 kΩ | 30 | ||||||
OUTPUT | |||||||
Voltage swing | (V–) + 0.15 | (V+) – 0.15 | V | ||||
Load capacitance stability | 1000 | pF | |||||
ZO | Closed-loop output impedance | f = 10 kHz | 5.0 | Ω | |||
ISC | Short-circuit current | Continuous to VS / 2 | ±20 | mA | |||
FREQUENCY RESPONSE | |||||||
BW | Bandwidth, –3 dB | G = 1 | 2.0 | MHz | |||
G = 10 | 890 | kHz | |||||
G = 100 | 270 | ||||||
G = 1000 | 30 | ||||||
SR | Slew rate | G = 1, VO = ±10 V | 0.9 | V/µs | |||
tS | Settling time | 0.01%, G = 1 to 100, VSTEP = 10 V | 12 | µs | |||
0.01%, G = 1000, VSTEP = 10 V | 40 | ||||||
0.001%, G = 1 to 100, VSTEP = 10 V | 16 | ||||||
0.001%, G = 1000, VSTEP = 10 V | 60 | ||||||
REFERENCE INPUT | |||||||
RIN | Input impedance | 40 | kΩ | ||||
Voltage range | (V–) | (V+) | V | ||||
Gain to output | 1 | V/V | |||||
Reference gain error | 0.01% | ||||||
POWER SUPPLY | |||||||
IQ | Quiescent current | VIN = 0 V | 350 | 385 | µA | ||
vs temperature, TA = –40°C to +125°C | 520 |