JAJSFX6C August   2018  – July 2019 INA821

PRODUCTION DATA.  

  1. 特長
  2. アプリケーション
  3. 概要
    1.     Device Images
      1.      INA821 の簡略化された内部回路図
      2.      入力段のオフセット電圧ドリフトの代表的な分布
  4. 改訂履歴
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics: Table of Graphs
    7. 7.7 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Setting the Gain
        1. 8.3.1.1 Gain Drift
      2. 8.3.2 EMI Rejection
      3. 8.3.3 Input Common-Mode Range
      4. 8.3.4 Input Protection
      5. 8.3.5 Operating Voltage
      6. 8.3.6 Error Sources
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Reference Pin
      2. 9.1.2 Input Bias Current Return Path
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Other Application Examples
      1. 9.3.1 Resistance Temperature Detector Interface
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 デバイス・サポート
      1. 12.1.1 開発サポート
    2. 12.2 ドキュメントのサポート
      1. 12.2.1 関連資料
    3. 12.3 ドキュメントの更新通知を受け取る方法
    4. 12.4 コミュニティ・リソース
    5. 12.5 商標
    6. 12.6 静電気放電に関する注意事項
    7. 12.7 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Gain Drift

The stability and temperature drift of the external gain setting resistor (RG) also affects gain. The contribution of RG to gain accuracy and drift is determined from Equation 1.

The best gain drift of 5 ppm/℃ (maximum) is achieved when the INA821 uses G = 1 without RG connected. In this case, gain drift is limited by the slight mismatch of the temperature coefficient of the integrated 10-kΩ resistors in the differential amplifier (A3). At gains greater than 1, gain drift increases as a result of the individual drift of the 24.7-kΩ resistors in the feedback of A1 and A2 relative to the drift of the external gain resistor (RG.) The low temperature coefficient of the internal feedback resistors significantly improves the overall temperature stability of applications using gains greater than 1 V/V over alternate options.

Low resistor values required for high gain make wiring resistance an important consideration. Sockets add to the wiring resistance and contribute additional gain error (such as a possible unstable gain error) at gains of approximately 100 or greater. To maintain stability, avoid parasitic capacitance of more than a few picofarads at RG connections. Careful matching of any parasitics on the RG pins maintains optimal CMRR over frequency; see Figure 17.