4 改訂履歴
Changes from D Revision (March 2018) to E Revision
- Changed VIH and VIH to VIL and VIH in the RTHR resistor description in the Setting Current Limit and Voltage Thresholds sectionGo
Changes from C Revision (February 2018) to D Revision
- 「特長」および「アプリケーション」セクションを更新。新しいTI TechNoteへの参照を「概要」および「関連資料」セクションに追加。Go
- Changed the unit for CPG from µm to mm in the Insulation Specifications tableGo
- Changed the Functional Block DiagramGo
- Changed VIL from min to typ in the VIL equationGo
- Added the Designing for Input Voltages Greater Than 60 V sectionGo
- Added the bidirectional implementation example to the Sourcing and Sinking Inputs sectionGo
Changes from B Revision (September 2017) to C Revision
- Added 「特長」セクションにワイヤの断線検出をGo
- Added 「特長」セクションにイネーブル・ピンによる出力信号の多重化をGo
- Changed RTHR = 5 kΩ to 4 kΩ in the High-Level Voltage Transition Threshold vs Ambient Temperature graphGo
- Changed the Type 1 RTH value from 3 kΩ to 2.5 kΩ in the Surge, IEC ESD and EFT tableGo
Changes from A Revision (September 2017) to B Revision
- Changed ステータスを「事前情報」から「量産データ」にGo