SLLSEI8D June   2014  – April 2015 ISO7310C , ISO7310FC

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Electrical Characteristics
    8. 6.8 Switching Characteristics
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 High Voltage Feature Description
        1. 8.3.1.1 Insulation and Safety-Related Specifications for D-8 Package
        2. 8.3.1.2 Insulation Characteristics
        3. 8.3.1.3 Regulatory Information
        4. 8.3.1.4 Safety Limiting Values
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device I/O Schematics
  9. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Typical Supply Current Equations
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Electromagnetic Compatibility (EMC) Considerations
      3. 9.2.3 Application Performance Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 PCB Material
    2. 11.2 Layout Guidelines
    3. 11.3 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Trademarks
    2. 12.2 Electrostatic Discharge Caution
    3. 12.3 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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メカニカル・データ（パッケージ｜ピン）
  • D|8
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings(1)

MIN MAX UNIT
Supply voltage(2) VCC1 , VCC2 –0.5 6 V
Voltage (2) IN, OUT –0.5 VCC+0.5(3) V
Output current IO ±15 mA
Junction temperature TJ 150 °C
Storage temperature Tstg –65 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal and are peak voltage values.
(3) Maximum voltage must not exceed 6 V.

6.2 ESD Ratings

MAX UNIT
VESD Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V
Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN TYP MAX UNIT
VCC1, VCC2 Supply voltage 3 5.5 V
IOH High-level output current –4 mA
IOL Low-level output current 4 mA
VIH High-level input voltage 2 5.5 V
VIL Low-level input voltage 0 0.8 V
tui Input pulse duration 40 ns
1 / tui Signaling rate 0 25 Mbps
TJ(1) Junction temperature 136 °C
TA Ambient temperature -40 25 125 °C
(1) To maintain the recommended operating conditions for TJ, see the Thermal Information table.

6.4 Thermal Information

THERMAL METRIC(1) D PACKAGE UNIT
(8) PINS
RθJA Junction-to-ambient thermal resistance 119.9 °C/W
RθJCtop Junction-to-case (top) thermal resistance 65.2
RθJB Junction-to-board thermal resistance 61.3
ψJT Junction-to-top characterization parameter 19.3
ψJB Junction-to-board characterization parameter 60.7
RθJCbot Junction-to-case (bottom) thermal resistance N/A
PD Maximum power dissipation VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL = 15 pF,
Input a 12.5 MHz 50% duty-cycle square wave		 34 mW
PD1 Power dissipation by Side-1 7.9
PD2 Power dissipation by Side-2 26.1
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

VCC1 and VCC2 at 5 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOH High-level output voltage IOH = –4 mA; see Figure 9 VCC2 – 0.5 4.7 V
IOH = –20 μA; see Figure 9 VCC2 – 0.1 5
VOL Low-level output voltage IOL = 4 mA; see Figure 9 0.2 0.4 V
IOL = 20 μA; see Figure 9 0 0.1
VI(HYS) Input threshold voltage hysteresis 480 mV
IIH High-level input current IN = VCC 10 μA
IIL Low-level input current IN = 0 V –10 μA
CMTI Common-mode transient immunity VI = VCC or 0 V; see Figure 11. 25 65 kV/μs
SUPPLY CURRENT (All inputs switching with square wave clock signal for dynamic ICC measurement)
ICC1 Supply current for VCC1 and VCC2 DC to 1 Mbps DC Input: VI = VCC or 0 V,
AC Input: CL = 15pF		 0.3 0.6 mA
ICC2 1.6 2.4
ICC1 10 Mbps CL = 15pF 0.5 1
ICC2 2.2 3.2
ICC1 25 Mbps CL = 15pF 0.8 1.3
ICC2 3 4.2

6.6 Switching Characteristics

VCC1 and VCC2 at 5 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tPLH, tPHL Propagation delay time See Figure 9 20 32 58 ns
PWD(1) Pulse width distortion |tPHL – tPLH| 4 ns
tsk(pp)(2) Part-to-part skew time 24 ns
tr Output signal rise time See Figure 9 2.5 ns
tf Output signal fall time 2 ns
tfs Fail-safe output delay time from input power loss See Figure 10 7.5 μs
(1) Also known as pulse skew.
(2) tsk(pp) is the magnitude of the difference in propagation delay times between any terminals of different devices switching in the same direction while operating at identical supply voltages, temperature, input signals and loads.

6.7 Electrical Characteristics

VCC1 and VCC2 at 3.3 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOH High-level output voltage IOH = –4 mA; see Figure 9 VCC2 – 0.5 3 V
IOH = –20 μA; see Figure 9 VCC2 – 0.1 3.3
VOL Low-level output voltage IOL = 4 mA; see Figure 9 0.2 0.4 V
IOL = 20 μA; see Figure 9 0 0.1
VI(HYS) Input threshold voltage hysteresis 450 mV
IIH High-level input current IN = VCC 10 μA
IIL Low-level input curre IN = 0 V -10 μA
CMTI Common-mode transient immunity VI = VCC or 0 V; see Figure 11 25 50 kV/μs
SUPPLY CURRENT (All inputs switching with square wave clock signal for dynamic ICC measurement)
ICC1 Supply current for VCC1 and VCC2 DC to 1 Mbps DC Input: VI = VCC or 0 V,
AC Input: CL = 15pF		 0.2 0.4 mA
ICC2 1.2 1.8
ICC1 10 Mbps CL = 15pF 0.3 0.5
ICC2 1.6 2.2
ICC1 25 Mbps CL = 15pF 0.5 0.8
ICC2 2.1 3

6.8 Switching Characteristics

VCC1 and VCC2 at 3.3 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tPLH, tPHL Propagation delay time See Figure 9 22 36 67 ns
PWD(1) Pulse width distortion |tPHL – tPLH| 3.5 ns
tsk(pp)(2) Part-to-part skew time 28 ns
tr Output signal rise time See Figure 9 3.2 ns
tf Output signal fall time 2.7 ns
tfs Fail-safe output delay time from input power loss See Figure 10 7.4 μs
(1) Also known as pulse skew.
(2) tsk(pp) is the magnitude of the difference in propagation delay times between any terminals of different devices switching in the same direction while operating at identical supply voltages, temperature, input signals and loads.

6.9 Typical Characteristics

ISO7310C ISO7310FC C002_SLLSEI8.png
TA = 25°C CL = 15 pF
Figure 1. Supply Current vs Data Rate (with 15 pF Load)
ISO7310C ISO7310FC C004_SLLSEI8.png
TA = 25°C
Figure 3. High-Level Output Voltage vs High-level Output Current
ISO7310C ISO7310FC C006_SLLEI8.png
Figure 5. Power Supply Undervoltage Threshold vs Free-Air Temperature
ISO7310C ISO7310FC C008_SLLEI8.png
Figure 7. Input Glitch Suppression Time vs Free-Air Temperature
ISO7310C ISO7310FC C003_SLLSEI8.png
TA = 25°C CL = No Load
Figure 2. Supply Current vs Data Rate (with No Load)
ISO7310C ISO7310FC C005_SLLSEI8.png
TA = 25°C
Figure 4. Low-Level Output Voltage vs Low-Level Output Current
ISO7310C ISO7310FC C007_SLLEI8.png
Figure 6. Propagation Delay Time vs Free-Air Temperature
ISO7310C ISO7310FC C009_SLLEI8.png
TA = 25°C
Figure 8. Output Jitter vs Data Rate