JAJSJQ9C September   2021  – April 2022 ISOW7740 , ISOW7741 , ISOW7742 , ISOW7743 , ISOW7744

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 概要 (続き)
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety Limiting Values
    9. 7.9  Electrical Characteristics - Power Converter
    10. 7.10 Supply Current Characteristics - Power Converter
    11. 7.11 Electrical Characteristics Channel Isolator - VIO, VISOIN = 5-V
    12. 7.12 Supply Current Characteristics Channel Isolator - VIO, VISOIN = 5-V
    13. 7.13 Electrical Characteristics Channel Isolator - VIO, VISOIN = 3.3-V
    14. 7.14 Supply Current Characteristics Channel Isolator - VIO, VISOIN = 3.3-V
    15. 7.15 Electrical Characteristics Channel Isolator - VIO, VISOIN = 2.5-V
    16. 7.16 Supply Current Characteristics Channel Isolator - VIO, VISOIN = 2.5-V
    17. 7.17 Electrical Characteristics Channel Isolator - VIO, VISOIN = 1.8-V
    18. 7.18 Supply Current Characteristics Channel Isolator - VIO, VISOIN = 1.8-V
    19. 7.19 Switching Characteristics - 5-V Supply
    20. 7.20 Switching Characteristics - 3.3-V Supply
    21. 7.21 Switching Characteristics - 2.5-V Supply
    22. 7.22 Switching Characteristics - 1.8-V Supply
    23. 7.23 Insulation Characteristics Curves
    24. 7.24 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
      1. 9.1.1 Power Isolation
      2. 9.1.2 Signal Isolation
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Electromagnetic Compatibility (EMC) Considerations
      2. 9.3.2 Power-Up and Power-Down Behavior
      3. 9.3.3 Protection Features
    4. 9.4 Device Functional Modes
      1. 9.4.1 Device I/O Schematics
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curve
      4. 10.2.4 Insulation Lifetime
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 PCB Material
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Development Support
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 サポート・リソース
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.6 Insulation Specifications

PARAMETER TEST CONDITIONS VALUE UNIT
GENERAL
CLR External clearance(1) Shortest terminal-to-terminal distance through air >8 mm
CPG External creepage(1) Shortest terminal-to-terminal distance across the package surface >8 mm
DTI Distance through the insulation Minimum internal gap (internal clearance – capacitive signal isolation) > 17 µm
Minimum internal gap (internal clearance – transformer power isolation) >120
CTI Comparative tracking index DIN EN 60112 (VDE 0303-11); IEC 60112 > 600 V
Material group According to IEC 60664-1 I
Overvoltage category per IEC 60664-1 Rated mains voltage ≤ 300 VRMS I-IV
Rated mains voltage ≤ 600 VRMS I-IV
Rated mains voltage ≤ 1000 VRMS I-III
DIN VDE V 0884-11:2017-01(2)
VIORM Maximum repetitive peak isolation voltage AC voltage (bipolar) 1500 VPK
VIOWM Maximum working isolation voltage AC voltage; Time dependent dielectric breakdown (TDDB) Test 1000 VRMS
DC voltage 1500 VDC
VIOTM Maximum transient isolation voltage VTEST = VIOTM; t = 60 s (qualification);
VTEST = 1.2 × VIOTM; t = 1 s (100% production)		 7071 VPK
VIOSM Maximum surge isolation voltage ISOW774x(3) Test method per IEC 62368-1, 1.2/50 µs waveform,
VTEST = 1.6 × VIOSM = 10000 VPK(qualification)		 6250 VPK
VIOSM Maximum surge isolation voltage ISOW774xB(3) Test method per IEC 62368-1, 1.2/50 µs waveform,
VTEST = 1.3 × VIOSM = 7800 VPK(qualification)		 6000 VPK
qpd Apparent charge(4) Method a, after input/output safety test subgroup 2/3,
Vini = VIOTM, tini = 60 s;
Vpd(m) = 1.2 × VIORM, tm = 10 s		 ≤ 5 pC
Method a, after environmental tests subgroup 1,
Vini = VIOTM, tini = 60 s; ISOW774x: Vpd(m) = 1.6 × VIORM, tm = 10 s, ISOW774xB: Vpd(m) = 1.2 × VIORM, tm = 10 s		 ≤ 5
Method b1, at routine test (100% production) and preconditioning (type test),
Vini = 1.2 × VIOTM, tini = 1 s;
ISOW774x: Vpd(m) = 1.875 × VIORM, tm = 1 s, ISOW774xB: Vpd(m) = 1.5 × VIORM, tm = 1 s		 ≤ 5
CIO Barrier capacitance, input to output(5) VIO = 0.4 × sin (2πft), f = 1 MHz ~3.5 pF
RIO Insulation resistance(5) VIO = 500 V, TA = 25°C > 1012 Ω
VIO = 500 V, 100°C ≤ TA ≤ 125°C > 1011
VIO = 500 V, TS = 150°C > 109
Pollution degree 2
Climatic category 40/125/21
UL 1577
VISO(UL) Withstand isolation voltage VTEST = VISO(UL)= 5000 VRMS, t = 60 s (qualification),
VTEST = 1.2 × VISO(UL) = 6000 VRMS, t = 1 s (100% production)		 5000 VRMS
(1) Creepage and clearance requirements should be applied according to the specific equipment isolation standards of an application. Care should be taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on the printed-circuit board do not reduce this distance. Creepage and clearance on a printed-circuit board become equal in certain cases. Techniques such as inserting grooves, ribs, or both on a printed circuit board are used to help increase these specifications.
(2) ISOW77xx is suitable for safe electrical insulation and ISOW77xxB is suitable for basic electrical insulation only within the safety ratings.. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
(3) Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier.
(4) Apparent charge is electrical discharge caused by a partial discharge (pd).
(5) All pins on each side of the barrier tied together creating a two-terminal device.