JAJSQH0 october   2021 IWR2243

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 機能ブロック図
  6. 5 Revision History
  7. 6 Device Comparison
    1. 6.1 Related Products
  8. 7 Terminal Configuration and Functions
    1. 7.1 Pin Diagram
    2. 7.2 Signal Descriptions
  9. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Power-On Hours (POH)
    4. 8.4 Recommended Operating Conditions
    5. 8.5 Power Supply Specifications
    6. 8.6 Power Consumption Summary
    7. 8.7 RF Specification
    8. 8.8 Thermal Resistance Characteristics for FCBGA Package [ABL0161]
    9. 8.9 Timing and Switching Characteristics
      1. 8.9.1 Power Supply Sequencing and Reset Timing
      2. 8.9.2 Synchronized Frame Triggering
      3. 8.9.3 Input Clocks and Oscillators
        1. 8.9.3.1 Clock Specifications
      4. 8.9.4 Multibuffered / Standard Serial Peripheral Interface (MibSPI)
        1. 8.9.4.1 Peripheral Description
          1. 8.9.4.1.1 SPI Timing Conditions
          2. 8.9.4.1.2 SPI Peripheral Mode Switching Parameters (SPICLK = input, SPISIMO = input, and SPISOMI = output)
          3. 8.9.4.1.3 SPI Peripheral Mode Timing Requirements (SPICLK = input, SPISIMO = input, and SPISOMI = output)
        2. 8.9.4.2 Typical Interface Protocol Diagram (Peripheral Mode)
      5. 8.9.5 Inter-Integrated Circuit Interface (I2C)
        1. 8.9.5.1 I2C Timing Requirements
      6. 8.9.6 Quad Serial Peripheral Interface (QSPI)
        1. 8.9.6.1 QSPI Timing Conditions
        2. 8.9.6.2 Timing Requirements for QSPI Input (Read) Timings
        3. 8.9.6.3 QSPI Switching Characteristics
      7. 8.9.7 LVDS Interface Configuration
        1. 8.9.7.1 LVDS Interface Timings
      8. 8.9.8 General-Purpose Input/Output
        1. 8.9.8.1 Switching Characteristics for Output Timing versus Load Capacitance (CL)
      9. 8.9.9 Camera Serial Interface (CSI)
        1. 8.9.9.1 CSI Switching Characteristics
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Subsystems
      1. 9.3.1 RF and Analog Subsystem
        1. 9.3.1.1 Clock Subsystem
        2. 9.3.1.2 Transmit Subsystem
        3. 9.3.1.3 Receive Subsystem
      2. 9.3.2 Host Interface
    4. 9.4 Other Subsystems
      1. 9.4.1 ADC Data Format Over CSI2 Interface
      2. 9.4.2 ADC Channels (Service) for User Application
        1. 9.4.2.1 GPADC Parameters
  11. 10Monitoring and Diagnostic Mechanisms
  12. 11Applications, Implementation, and Layout
    1. 11.1 Application Information
    2. 11.2 Imaging Radar using Cascade Configuration
    3. 11.3 Reference Schematic
    4. 11.4 Layout
      1. 11.4.1 Layout Guidelines
      2. 11.4.2 Stackup Details
  13. 12Device and Documentation Support
    1. 12.1 Device Nomenclature
    2. 12.2 Tools and Software
    3. 12.3 Documentation Support
    4. 12.4 サポート・リソース
    5. 12.5 Trademarks
    6. 12.6 静電気放電に関する注意事項
    7. 12.7 Export Control Notice
    8. 12.8 用語集
  14. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Packaging Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

8.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
PARAMETERSMINMAXUNIT
VDDIN1.2 V digital power supply–0.51.4V
VIN_SRAM1.2 V power rail for internal SRAM–0.51.4V
VNWA1.2 V power rail for SRAM array back bias–0.51.4V
VIOINI/O supply (3.3 V or 1.8 V): All CMOS I/Os would operate on this supply.–0.53.8V
VIOIN_181.8 V supply for CMOS IO–0.52V
VIN_18CLK1.8 V supply for clock module–0.52V
VIOIN_18DIFF1.8 V supply for CSI2 port–0.52V
VIN_13RF11.3 V Analog and RF supply, VIN_13RF1 and VIN_13RF2 could be shorted on the board.–0.51.45V
VIN_13RF2
VIN_13RF11-V Internal LDO bypass mode. Device supports mode where external Power Management block can supply 1 V on VIN_13RF1 and VIN_13RF2 rails. In this configuration, the internal LDO of the device would be kept bypassed.–0.51.4V
VIN_13RF2
VIN_18BB1.8-V Analog baseband power supply–0.52V
VIN_18VCO supply1.8-V RF VCO supply–0.52V
RX1-4Externally applied power on RF inputs10dBm
TX1-4Externally applied power on RF outputs(3)10dBm
Input and output voltage rangeDual-voltage LVCMOS inputs, 3.3 V or 1.8 V (Steady State)–0.3VVIOIN + 0.3V
Dual-voltage LVCMOS inputs, operated at 3.3 V/1.8 V
(Transient Overshoot/Undershoot) or external oscillator input		VIOIN + 20% up to
20% of signal period
CLKP, CLKMInput ports for reference crystal–0.52V
Clamp currentInput or Output Voltages 0.3 V above or below their respective power rails. Limit clamp current that flows through the internal diode protection cells of the I/O.–2020mA
TJOperating junction temperature range–40105°C
TSTGStorage temperature range after soldered onto PC board–55150°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to VSS, unless otherwise noted.
(3) This value is for an externally applied signal level on the TX. Additionally, a reflection coefficient up to Gamma= 1 can be applied on the TX output.