SNOSD01D May 2015 – October 2016 LDC1101
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
VDD | Supply voltage range | 3.6 | V | |
Vi | Voltage on INA, INB | –0.3 | 2.3 | V |
Voltage on CLDO | –0.3 | 1.9 | V | |
Voltage on any other pin(2) | –0.3 | VDD + 0.3 | V | |
TJ | Junction temperature | –55 | 125 | °C |
Tstg | Storage temperature | –65 | 125 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VDD | Supply voltage | 1.71 | 3.46 | V | |
TJ | Junction temperature | –40 | 125 | °C |
THERMAL METRIC(1) | LDC1101 | UNIT | |
---|---|---|---|
DRC (VSON) | |||
10 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 44.2 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 50.1 | °C/W |
RθJB | Junction-to-board thermal resistance | 19.6 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.7 | °C/W |
ψJB | Junction-to-board characterization parameter | 19.8 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 4.4 | °C/W |
PARAMETER | TEST CONDITION(1) | MIN(2) | TYP(3) | MAX(2) | UNIT | |
---|---|---|---|---|---|---|
POWER | ||||||
VDD | Supply voltage | 1.71 | 3.46 | V | ||
IDD | Supply current | START_CONFIG= 0x00, no sensor connected | 1.9 | 2.7 | mA | |
IDDS | Supply current including sensor current | ƒCLKIN = 16 MHz, ƒSENSOR = 2 MHz, START_CONFIG = 0x00 |
3.2 | mA | ||
IDDSL | Sleep mode supply current | START_CONFIG =0x01 | 135 | 180 | µA | |
ISD | Shutdown mode supply current | 1.4 | 6.7 | µA | ||
SENSOR | ||||||
RP Measurement part-to-part variation | RESP_TIME= 6144, D_CONFIG=0x00, ALT_CONFIG=0x00, START_CONFIG = 0x00, ƒSENSOR = 2 MHz | 1% | ||||
ISENSORMAX | Sensor maximum current drive | RP_MIN = b111, START_CONFIG=0x00, D_CONFIG=0x00, ALT_CONFIG=0x00 | 0.598 | 0.6 | 0.602 | mA |
ISENSORMIN | Sensor minimum current drive | RP_MAX = b000, HIGH_Q_SENSOR=b0, START_CONFIG=0x00, D_CONFIG=0x00, ALT_CONFIG=0x00 | 4.7 | µA | ||
ƒSENSOR | Sensor resonant frequency | Device settings and Sensor compliant as detailed in LDC1101 RP Configuration | 0.5 | 10 | MHz | |
RPRES | RP Measurement resolution | 16 | bits | |||
LRES | Inductance sensing resolution – RP+L Mode | 16 | bits | |||
Inductance sensing resolution – LHR Mode | 24 | bits | ||||
AOSC | Sensor oscillation amplitude | INA – INB, START_CONFIG=0x00, D_CONFIG=0x00, ALT_CONFIG=0x00 | 1.2 | VPP | ||
DETECTION | ||||||
tS_MIN | Minimum response time (RP+L mode) | RP+L Mode, RESP_TIME=b010 | 192 ÷ ƒSENSOR |
s | ||
tS_MAX | Maximum response time (RP+L mode) | RP+L Mode, RESP_TIME=b111 | 6144 ÷ ƒSENSOR |
s | ||
Ts_MAX | High Res L maximum measurement interval | LHR_REF_COUNT=0xFFFF, START_CONFIG=0x00 | (220+39) ÷ ƒCLKIN |
s | ||
SRMAXRP | RP+L Mode maximum sample rate | ƒCLKIN=16 MHz, ƒSENSOR = 10 MHz, RESP_TIME=b010 | 156.25 | kSPS | ||
SRMAXL | High Res L Mode maximum sample rate | High Resolution L Mode, LHR_REF_COUNT=0x0002, ƒCLKIN=16 MHz | 183.8 | kSPS | ||
FREQUENCY REFERENCE | ||||||
fCLKIN | Reference input frequency | 1 | 16 | MHz | ||
DCfin | Reference duty cycle | 40% | 60% | |||
VIH | Input high voltage (Logic “1”) | 0.8 × VDD | V | |||
VIL | Input low voltage (Logic “0”) | 0.2 × VDD | V |
PARAMETER | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
VOLTAGE LEVELS | |||||
VIH | Input high voltage (Logic “1”) | 0.8 × VDD | V | ||
VIL | Input low voltage (Logic “0”) | 0.2 × VDD | V | ||
VOH | Output high voltage (Logic “1”, ISOURCE = 400 µA) | VDD– 0.3 | V | ||
VOL | Output low voltage (Logic “0”, ISINK = 400 µA) | 0.3 | V | ||
IOHL | Digital IO leakage current | –500 | 500 | nA |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
tSTART | Start-up time from shutdown to sleep | 0.8 | ms | ||
tWAKE | Wake-up time (from completion of SPI to conversion start; does not include sensor settling time) | 0.04 | ms | ||
INTERFACE TIMING REQUIREMENTS(1) | |||||
ƒSCLK | Serial clock frequency | 8 | MHz | ||
twH | SCLK pulse-width high | 0.4/ƒSCLK | s | ||
twL | SCLK pulse-width low | 0.4/ƒSCLK | s | ||
tsu | SDI setup time | 10 | ns | ||
th | SDI hold time | 10 | ns | ||
tODZ | SDO driven-to-tristate time | 25 | ns | ||
tOZD | SDO tristate-to-driven time | 25 | ns | ||
tOD | SDO output delay time | 20 | ns | ||
tsu(CS) | CSB setup time | 20 | ns | ||
th(CS) | CSB hold time | 20 | ns | ||
tIAG | CSB inter-access interval | 100 | ns | ||
tw(DRDY) | Data ready pulse width | 1/ƒSENSOR | ns |
Not including sensor current, default register settings. |
Including sensor current. 13-mm diameter sensor 0.1-mm spacing/0.1-mm trace width/ 4-layer 28 turns, fSENSOR = 2 MHz, RP_SET = 0x07, TX1 = 0x50, TC2 = 0x80, RCOUNT = 0xFFFF, RESP_TIME = 6144 |
RP_SET.RPMAX = b000 |
Not including sensor current, default register settings. |
RP_SET.RPMIN = b111 |