SLOS012C March   1987  – March 2016 LF353

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Slew Rate
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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発注情報

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC+ Supply voltage 18 V
VCC– Supply voltage –18 V
VID Differential input voltage ±30 V
VI Input voltage(2) ±15 V
Duration of output short circuit Unlimited s
Continuous total power dissipation 500 mW
Lead temperature 1.6 mm (1/16 inch) from case for 10 s 260 °C
TJ Junction temperature 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Unless otherwise specified, the absolute maximum negative input voltage is equal to the negative power supply voltage.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC+ Supply voltage 3.5 18 V
VCC– Supply voltage –3.5 –18 V
VCM Common-mode voltage VCC– + 4 VCC+ – 4 V
TA Operating temperature 0 70 °C

6.4 Thermal Information

THERMAL METRIC(1) LF353 UNIT
D (SOIC) P (PDIP)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 106.6 55.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 51.5 45 °C/W
RθJB Junction-to-board thermal resistance 46.5 32.2 °C/W
ψJT Junction-to-top characterization parameter 9.8 22.6 °C/W
ψJB Junction-to-board characterization parameter 46.1 32.2 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

TA = 0°C to 70°C, VCC± = ±15 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIO Input offset voltage VIC = 0, RS = 10 kΩ TA = 25°C 5 10 mV
Full range(1) 13
αVIO Average temperature coefficient of inputs offset voltage VIC = 0, RS = 10 kΩ 10 µV/°C
IIO Input offset current(2) VIC = 0 TA = 25°C 25 100 pA
TA = 70°C 4 nA
IIB Input bias current(2) VIC = 0 TA = 25°C 50 200 pA
TA = 70°C 8 nA
VICR Common-mode input voltage range Lower limit of range –11 –12 V
Upper limit of range 11 15
VOM Maximum peak output voltage swing RL = 10 kΩ ±12 ±13.5 V
AVD Large-signal differential voltage VO = ±10 V, RL = 2 kΩ TA = 25°C 25 100 V/mV
Full range(1) 15
ri Input resistance TJ = 25°C 1012 Ω
CMRR Common-mode rejection ratio RS ≤ 10 kΩ 70 100 dB
kSVR Supply-voltage rejection ratio See (3) 70 100 dB
ICC Supply current 3.6 6.5 mA
(1) Full range is 0°C to 70°C
(2) Input bias currents of a FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive. Pulse techniques must be used that will maintain the junction temperatures as close to the ambient temperature as possible.
(3) Supply-voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously.

6.6 Switching Characteristics

VCC± = ±15 V, TA = 25°C, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VO1/VO2 Crosstalk attenuation f = 1 kHz 120 dB
SR Slew rate 8 13 V/µs
B1 Unity-gain bandwidth 3 MHz
Vn Equivalent input noise voltage f = 1 kHz, RS = 20 Ω 18 nV/√Hz
In Equivalent input noise current f = 1 kHz 0.01 pA/√Hz

6.7 Typical Characteristics

LF353 vppfreq.gif Figure 1. Maximum Peak Output Voltage vs Frequency
LF353 number9_v4.png Figure 3. Large-Signal Differential Voltage Amplification
and Phase Shift vs Frequency
LF353 loadline.gif Figure 2. Maximum Peak Output Voltage vs Load Resistance