SNVS859C July 2012 – September 2016 LM25101
PRODUCTION DATA.
PIN | TYPE | DESCRIPTION | |||||
---|---|---|---|---|---|---|---|
NAME | MSOP PowerPAD | WSON (8) | WSON (10) | SO PowerPAD | SOIC | ||
HB | 2 | 2 | 2 | 2 | 2 | PWR | High-side gate driver bootstrap rail. Connect the positive terminal of the bootstrap capacitor to HB and the negative terminal to HS. The bootstrap capacitor should be placed as close to the IC as possible. |
HI | 5 | 5 | 7 | 5 | 5 | I | High-side driver control input. The LM25101 inputs have TTL type thresholds. Unused inputs should be tied to ground and not left open. |
HO | 3 | 3 | 3 | 3 | 3 | O | High-side gate driver output. Connect to the gate of high-side MOSFET with a short, low inductance path. |
HS | 4 | 4 | 4 | 4 | 4 | GND | High-side MOSFET source connection. Connect to the bootstrap capacitor negative terminal and the source of the high-side MOSFET. |
LI | 6 | 6 | 8 | 6 | 6 | I | Low-side driver control input. The LM25101 inputs have TTL type thresholds. Unused inputs should be tied to ground and not left open. |
LO | 8 | 8 | 10 | 8 | 8 | O | Low-side gate driver output. Connect to the gate of the low-side MOSFET with a short, low inductance path. |
NC | — | — | 5, 6 | — | — | — | No connection |
VDD | 1 | 1 | 1 | 1 | 1 | PWR | Positive gate drive supply. Locally decouple to VSS using a low ESR and ESL capacitor located as close to the IC as possible. |
VSS | 7 | 7 | 9 | 7 | 7 | GND | Ground return. All signals are referenced to this ground. |
Thermal Pad | PowerPAD | Thermal Pad | Thermal Pad | PowerPAD | — | — | Solder to the ground plane under the IC to aid in heat dissipation.(1) |