JAJSEF9 December   2017 LM25575-Q1

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      簡略化されたアプリケーション回路図
  4. 4 改訂履歴
  5. 5  Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 High Voltage Start-Up Regulator
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown and Stand-by Mode
      2. 7.4.2 Error Amplifier and PWM Comparator
      3. 7.4.3 Ramp Generator
      4. 7.4.4 Maximum Duty Cycle and Input Drop-out Voltage
      5. 7.4.5 Current Limit
      6. 7.4.6 Soft-Start
      7. 7.4.7 Boost Pin
      8. 7.4.8 Thermal Protection
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1  External Components
      2. 8.1.2  R3 (RT)
      3. 8.1.3  L1
      4. 8.1.4  C3 (CRAMP)
      5. 8.1.5  C9, C10
      6. 8.1.6  D1
      7. 8.1.7  C1, C2
      8. 8.1.8  C8
      9. 8.1.9  C7
      10. 8.1.10 C4
      11. 8.1.11 R5, R6
      12. 8.1.12 R1, R2, C12
      13. 8.1.13 R7, C11
      14. 8.1.14 R4, C5, C6
      15. 8.1.15 BIas Power Dissipation Reduction
    2. 8.2 Typical Application
      1. 8.2.1 Typical Schematic for High Frequency (1 MHz) Application
  9. 9 Layout
    1. 9.1 Layout Guidelines
      1. 9.1.1 PCB Layout and Thermal Considerations
    2. 9.2 Layout Example
  10. 10デバイスおよびドキュメントのサポート
    1. 10.1 デバイス・サポート
      1. 10.1.1 開発サポート
        1. 10.1.1.1 WEBENCH®ツールによるカスタム設計
    2. 10.2 ドキュメントの更新通知を受け取る方法
    3. 10.3 コミュニティ・リソース
    4. 10.4 商標
    5. 10.5 静電気放電に関する注意事項
    6. 10.6 Glossary
  11. 11メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

8.1.6 D1

A Schottky type re-circulating diode is required for all LM25575-Q1 applications. Ultra-fast diodes are not recommended and may result in damage to the IC due to reverse recovery current transients. The near ideal reverse recovery characteristics and low forward voltage drop are particularly important diode characteristics for high input voltage and low output voltage applications common to the LM25575-Q1. The reverse recovery characteristic determines how long the current surge lasts each cycle when the buck switch is turned on. The reverse recovery characteristics of Schottky diodes minimize the peak instantaneous power in the buck switch occurring during turn-on each cycle. The resulting switching losses of the buck switch are significantly reduced when using a Schottky diode. The reverse breakdown rating should be selected for the maximum VIN, plus some safety margin.

The forward voltage drop has a significant impact on the conversion efficiency, especially for applications with a low output voltage. “Rated” current for diodes vary widely from various manufacturers. The worst case is to assume a short circuit load condition. In this case the diode will carry the output current almost continuously. For the LM25575-Q1 this current can be as high as 2.1 A. Assuming a worst case 1 V drop across the diode, the maximum diode power dissipation can be as high as 2.1 W. For the reference design a 60 V Schottky in a SMC package was selected.