SNVS135E September   1999  – December 2014 LM2660

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Test Circuits
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Changing Oscillator Frequency
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Voltage Inverter
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Capacitor Selection
          2. 9.2.1.2.2 Paralleling Devices
          3. 9.2.1.2.3 Cascading Devices
          4. 9.2.1.2.4 Regulating VOUT
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Positive Voltage Doubler
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Trademarks
    3. 12.3 Electrostatic Discharge Caution
    4. 12.4 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply voltage (V+ to GND, or GND to OUT) 6 V
LV (OUT − 0.3 V) to (GND + 3 V) V
FC, OSC The least negative of (OUT − 0.3 V)
or (V+ − 6 V) to (V+ + 0.3 V)		 V
V+ and OUT continuous output current 120 mA
Output short-circuit duration to GND (2) 1 second
Power dissipation SOIC (D)(3) 735 mW
Power dissipation VSSOP (DGK)(3) 500 mW
Lead temperature (soldering, 10 seconds) 300 °C
Operating junction temperature –40 85 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) OUT may be shorted to GND for one second without damage. However, shorting OUT to V+ may damage the device and should be avoided. Also, for temperatures above 85°C, OUT must not be shorted to GND or V+, or device may be damaged.
(3) The maximum allowable power dissipation is calculated by using PDMax = (TJMax − TA)/RθJA, where TJMax is the maximum junction temperature, TA is the ambient temperature, and RθJA is the junction-to-ambient thermal resistance of the specified package.

6.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –65 150 °C
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) 2000 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
V+ (supply voltage) Inverter, LV = Open 3.5 5.5
Inverter, LV = GND 1.5 5.5
Doubler, LV = OUT 2.5 5.5
Junction temperature (TJ) –40 85 °C

6.4 Thermal Information

THERMAL METRIC(1) LM2660 UNIT
SOIC (D) VSSOP (DGK)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 170 250 °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

Limits in for typical (TYP) values are for TJ = 25°C, and limits in for minimum (MIN) and maximum (MAX) values apply over the full operating temperature range; V+ = 5V, FC = Open, C1 = C2 = 150 μF, unless otherwise specified in the Test Conditions.(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V+ Supply voltage RL = 1k Inverter, LV = Open 3.5 5.5
Inverter, LV = GND 1.5 5.5 V
Doubler, LV = OUT 2.5 5.5
IQ Supply current No Load FC = Open 0.12 0.5 mA
LV = Open FC = V+ 1 3
IL Output current TA ≤ 85°C, OUT ≤ −4 V 100 mA
TA > 85°C, OUT ≤ −3.8 V 100
ROUT Output resistance(2) IL = 100 mA TA ≤ 85°C 6.5 10 Ω
TA > 85°C 12
fOSC Oscillator frequency OSC = Open FC = Open 5 10 kHz
FC = V+ 40 80
fSW Switching frequency(3) OSC = Open FC = Open 2.5 5 kHz
FC = V+ 20 40
IOSC OSC input current FC = Open ±2 µA
FC = V+ ±16
PEFF Power efficiency RL (1k) between V+ and OUT 96% 98%
RL (500) between GND and OUT 92% 96%
IL = 100 mA to GND 88%
VOEFF Voltage conversion efficiency No Load 99% 99.96%
(1) In the test circuit, capacitors C1 and C2 are 0.2-Ω maximum ESR capacitors. Capacitors with higher ESR will increase output resistance, reduce output voltage and efficiency.
(2) Specified output resistance includes internal switch resistance and capacitor ESR.
(3) The output switches operate at one half of the oscillator frequency, fOSC = 2fSW.

6.6 Typical Characteristics

(Circuit of Figure 12)
1291107.png
Figure 1. Supply Current vs Supply Voltage
1291109.png
Figure 3. Output Source Resistance vs Supply Voltage
1291112.png
Figure 5. Output Voltage Drop vs Load Current
1291115.png
Figure 7. Oscillator Frequency vs External Capacitance
1291117.png
Figure 9. Oscillator Frequency vs Supply Voltage
(Fc = Open)
1291119.png
Figure 11. Oscillator Frequency vs Temperature
(Fc = Open)
1291108.png
Figure 2. Supply Current vs Oscillator Frequency
1291110.png
Figure 4. Output Source Resistance vs Temperature
1291114.png
Figure 6. Output Voltage vs Oscillator Frequency
1291116.png
Figure 8. Oscillator Frequency vs Supply Voltage
(Fc = V+)
1291118.png
Figure 10. Oscillator Frequency vs Temperature
(Fc = V+)