SNVS316H September   2004  – December 2014 LM2736

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Output Overvoltage Protection
      2. 7.3.2 Undervoltage Lockout
      3. 7.3.3 Current Limit
      4. 7.3.4 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Enable Pin / Shutdown Mode
      2. 7.4.2 Soft-Start
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Boost Function
    2. 8.2 Typical Applications
      1. 8.2.1  LM2736X (1.6 MHz) VBOOST Derived from VIN 5 V to 1.5 V / 750 mA
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedures
          1. 8.2.1.2.1 Inductor Selection
          2. 8.2.1.2.2 Input Capacitor
          3. 8.2.1.2.3 Output Capacitor
          4. 8.2.1.2.4 Catch Diode
          5. 8.2.1.2.5 Boost Diode
          6. 8.2.1.2.6 Boost Capacitor
          7. 8.2.1.2.7 Output Voltage
        3. 8.2.1.3 Application Curves
      2. 8.2.2  LM2736X (1.6 MHz) VBOOST Derived from VOUT 12 V to 3.3 V / 750 mA
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedures
        3. 8.2.2.3 Application Curves
      3. 8.2.3  LM2736X (1.6 MHz) VBOOST Derived from VSHUNT 18 V to 1.5 V / 750 mA
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
        3. 8.2.3.3 Application Curves
      4. 8.2.4  LM2736X (1.6 MHz) VBOOST Derived from Series Zener Diode (VIN) 15 V to 1.5 V / 750 mA
        1. 8.2.4.1 Design Requirements
        2. 8.2.4.2 Detailed Design Procedure
        3. 8.2.4.3 Application Curves
      5. 8.2.5  LM2736X (1.6 MHz) VBOOST Derived from Series Zener Diode (VOUT) 15 V to 9 V / 750 mA
        1. 8.2.5.1 Design Requirements
        2. 8.2.5.2 Detailed Design Procedure
        3. 8.2.5.3 Application Curves
      6. 8.2.6  LM2736Y (550 kHz) VBOOST Derived from VIN 5 V to 1.5 V / 750 mA
        1. 8.2.6.1 Design Requirements
        2. 8.2.6.2 Detailed Design Procedure
        3. 8.2.6.3 Application Curves
      7. 8.2.7  LM2736Y (550 kHz) VBOOST Derived from VOUT 12 V to 3.3 V / 750 mA
        1. 8.2.7.1 Design Requirements
        2. 8.2.7.2 Detailed Design Procedure
        3. 8.2.7.3 Application Curves
      8. 8.2.8  LM2736Y (550 kHz) VBOOST Derived from VSHUNT 18 V to 1.5 V / 750 mA
        1. 8.2.8.1 Design Requirements
        2. 8.2.8.2 Detailed Design Procedure
        3. 8.2.8.3 Application Curves
      9. 8.2.9  LM2736Y (550 kHz) VBOOST Derived from Series Zener Diode (VIN) 15 V to 1.5 V / 750 mA
        1. 8.2.9.1 Design Requirements
        2. 8.2.9.2 Detailed Design Procedure
        3. 8.2.9.3 Application Curves
      10. 8.2.10 LM2736Y (550 kHz) VBOOST Derived from Series Zener Diode (VOUT) 15 V to 9 V / 750 mA
        1. 8.2.10.1 Design Requirements
        2. 8.2.10.2 Detailed Design Procedure
        3. 8.2.10.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VIN -0.5 22 V
SW Voltage -0.5 22 V
Boost Voltage -0.5 28 V
Boost to SW Voltage -0.5 8 V
FB Voltage -0.5 3 V
EN Voltage -0.5 VIN + 0.3 V
Junction Temperature 150 °C
Soldering Information Infrared/Convection Reflow (15sec) 220 °C
Wave Soldering Lead temperature (10sec)  260 °C
Tstg Storage temperature -65 150 °C

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM),
per ANSI/ESDA/JEDEC JS-001, all pins(1)		 ±2000 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VIN 3 18 V
SW Voltage -0.5 18 V
Boost Voltage -0.5 23 V
Boost to SW Voltage 1.6 5.5 V
Junction Temperature Range −40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) LM2736 UNIT
DDC
6 PINS
RθJA(2) Junction-to-ambient thermal resistance 158.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 46.5
RθJB Junction-to-board thermal resistance 29.5
ψJT Junction-to-top characterization parameter 0.8
ψJB Junction-to-board characterization parameter 29.2
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

Specifications with standard typeface are for TJ = 25°C unless otherwise specified. Datasheet min/max specification limits are ensured by design, test, or statistical analysis.
PARAMETER TEST CONDITIONS TJ = 25°C TJ = -40°C to 125°C UNIT
MIN(3) TYP(4) MAX(3) MIN TYP MAX
VFB Feedback Voltage 1.250 1.225 1.275 V
ΔVFB/ΔVIN Feedback Voltage Line Regulation VIN = 3V to 18V 0.01 % / V
IFB Feedback Input Bias Current Sink/Source 10 250 nA
UVLO Undervoltage Lockout VIN Rising 2.74 2.90 V
Undervoltage Lockout VIN Falling 2.3 2.0
UVLO Hysteresis 0.44 0.30 0.62
FSW Switching Frequency LM2736X 1.6 1.2 1.9 MHz
LM2736Y 0.55 0.40 0.66
DMAX Maximum Duty Cycle LM2736X 92% 85%
LM2736Y 96% 90%
DMIN Minimum Duty Cycle LM2736X 2%
LM2736Y 1%
RDS(ON) Switch ON Resistance VBOOST - VSW = 3V 350 650 mΩ
ICL Switch Current Limit VBOOST - VSW = 3V 1.5 1.0 2.3 A
IQ Quiescent Current Switching 1.5 2.5 mA
Quiescent Current (shutdown) VEN = 0V 30 nA
IBOOST Boost Pin Current LM2736X (50% Duty Cycle) 2.2 3.3 mA
LM2736Y (50% Duty Cycle) 0.9 1.6
VEN_TH Shutdown Threshold Voltage VEN Falling 0.4 V
Enable Threshold Voltage VEN Rising 1.8
IEN Enable Pin Current Sink/Source 10 nA
ISW Switch Leakage 40 nA
(1) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications.
(2) Thermal shutdown will occur if the junction temperature exceeds 165°C. The maximum power dissipation is a function of TJ(MAX) , θJA and TA . The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA)/θJA . All numbers apply for packages soldered directly onto a 3” x 3” PC board with 2oz. copper on 4 layers in still air. For a 2 layer board using 1 oz. copper in still air, θJA = 204°C/W.
(3) Specified to Texas Instruments' Average Outgoing Quality Level (AOQL).
(4) Typicals represent the most likely parametric norm.

6.6 Typical Characteristics

All curves taken at VIN = 5V, VBOOST - VSW = 5V, L1 = 4.7 µH ("X"), L1 = 10 µH ("Y"), and TA = 25°C, unless specified otherwise.
20124255.png
Figure 1. Oscillator Frequency vs Temperature - "X"
20124229.png
Figure 3. Current Limit vs Temperature
20124230.png
Figure 5. RDSON vs Temperature
20124258.png
Figure 7. Line Regulation - "X"
20124257.png
VOUT = 3.3 V, IOUT = 500 mA
Figure 9. Line Regulation - "X"
20124228.png
Figure 2. Oscillator Frequency vs Temperature - "Y"
20124233.png
Figure 4. VFB vs Temperature
20124246.png
Figure 6. IQ Switching vs Temperature
20124256.png
Figure 8. Line Regulation - "Y"
20124260.png
VOUT = 3.3 V, IOUT = 500 mA
Figure 10. Line Regulation - "Y"