SNVS653E July   2011  – August 2015 LM3532

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 I2C-Compatible Timing Specifications (SCL, SDA)
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 40-V Boost Converter
      2. 7.3.2 Hardware Enable Input
      3. 7.3.3 Feedback Enable
      4. 7.3.4 LM3532 Current Sink Configuration
      5. 7.3.5 PWM Inputs
      6. 7.3.6 Full-Scale LED Current
      7. 7.3.7 Interrupt Output
      8. 7.3.8 Protection Features
        1. 7.3.8.1 Overvoltage Protection
        2. 7.3.8.2 Current Limit
    4. 7.4 Device Functional Modes
      1. 7.4.1  LED Current Ramping
      2. 7.4.2  Start-up and Shutdown Current Ramping
      3. 7.4.3  Run-Time Ramp Rates
      4. 7.4.4  LED Current Mapping Modes
      5. 7.4.5  Exponential Current Mapping Mode
      6. 7.4.6  Linear Current Mapping
      7. 7.4.7  LED Current Control
        1. 7.4.7.1 I2C Current Control
        2. 7.4.7.2 I2C Current Control With PWM
      8. 7.4.8  Assigning and Enabling a PWM Input
      9. 7.4.9  Enabling a Current Sink
      10. 7.4.10 Ambient Light Sensor Current Control
        1. 7.4.10.1  ALS Resistors
        2. 7.4.10.2  Ambient Light Zone Boundaries
        3. 7.4.10.3  Ambient Light Zone Hysteresis
        4. 7.4.10.4  PWM Enabled for a Particular Zone
        5. 7.4.10.5  ALS Operation
        6. 7.4.10.6  ALS Input Select and ALS ADC Input
        7. 7.4.10.7  ALS ADC Readback
        8. 7.4.10.8  ALS Averaging
        9. 7.4.10.9  ALS ADC Average Readback
        10. 7.4.10.10 Initializing the ALS
        11. 7.4.10.11 ALS Operation
        12. 7.4.10.12 Direct ALS Control
      11. 7.4.11 Down Delay
    5. 7.5 Programming
      1. 7.5.1 I2C-Compatible Interface
        1. 7.5.1.1 Start and Stop Conditions
        2. 7.5.1.2 I2C-Compatible Address
        3. 7.5.1.3 Transferring Data
    6. 7.6 Register Maps
      1. 7.6.1  Output Configuration
      2. 7.6.2  Start-up/Shutdown Ramp Rate
      3. 7.6.3  Run-Time Ramp Rate
      4. 7.6.4  Control A PWM
      5. 7.6.5  Control B PWM
      6. 7.6.6  Control C PWM
      7. 7.6.7  Control A Brightness Configuration
      8. 7.6.8  Control B Brightness Configuration
      9. 7.6.9  Control C Brightness Configuration
      10. 7.6.10 Control A, B, and C Full-Scale Current
      11. 7.6.11 Feedback Enable
      12. 7.6.12 Control Enable
      13. 7.6.13 ALS1 and ALS2 Resistor Select
      14. 7.6.14 ALS Down Delay
      15. 7.6.15 ALS Configuration
      16. 7.6.16 ALS Zone Readback / Information
      17. 7.6.17 ALS Zone Boundaries
      18. 7.6.18 Zone Target Registers
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Inductor Selection
        2. 8.2.2.2 Capacitor Selection
        3. 8.2.2.3 Diode Selection
        4. 8.2.2.4 Maximum Output Power
          1. 8.2.2.4.1 Peak Current Limited
          2. 8.2.2.4.2 Output Voltage Limited
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Output Capacitor Placement
      2. 10.1.2 Schottky Diode Placement
      3. 10.1.3 Inductor Placement
      4. 10.1.4 Input Capacitor Selection and Placement
    2. 10.2 Layout Examples
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)(3)
MIN MAX UNIT
VIN to GND V
VSW, VOVP, VILED1, VILED2, VILED3 to GND V
VSCL, VSDA, VALS1, VALS2, VPWM1, VPWM2, VINT, VHWEN, VT0 to GND V
Continuous power dissipation Internally Limited
Junction temperature , TJ-MAX 150 °C
Maximum lead temperature (soldering, 10s)(4) 300 °C
Storage temperature, Tstg −65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/ Distributors for availability and specifications
(3) All voltages are with respect to the potential at the GND pin.
(4) For detailed soldering specifications and information, refer to Application Note AN-1112: DSBGA Wafer Level Chip Scale Package (SNVA009).

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±5000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN NOM MAX UNIT
VIN to GND 2.7 5.5 V
VSW, VOVP, VILED1, VILED2, VILED3 to GND 0 40 V
Junction temperature, TJ(3)(4) –40 125 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to the potential at the GND pin.
(3) Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ= 140°C (typical) and disengages at TJ= 125°C (typical).
(4) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP = 125°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the part/package in the application (RθJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (RθJA × PD-MAX).

6.4 Thermal Information

THERMAL METRIC(1) LM3532 UNIT
YFQ (DSBGA)
16 PINS
RθJA Junction-to-ambient thermal resistance 61.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

Minimum and maximum limits apply over the full operating ambient temperature range (−40°C ≤ TA ≤ +85°C), typical limits are for TA = 25°C, and VIN = 3.6 V, unless otherwise specified.(1)(2)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ILED(1/2/3) Output current regulation accuracy (ILED1, ILED2 or ILED3) 2.7 V ≤ VIN ≤ 5.5 V, ControlX full-scale current register = 0xF3, brightness code = 0xFF 20.2 mA
2.7 V ≤ VIN ≤ 5.5 V, ControlX full-scale current register = 0xF3, brightness code = 0xFF 18.68 21.8 mA
IMATCH(3)(4) ILED2 to ILED3 current matching 2.7 V ≤ VIN ≤ 5.5 V, IFULL_SCALE = 20.2 mA
Brightness code = 0xFF		 0.3%
2.7 V ≤ VIN ≤ 5.5 V, IFULL_SCALE = 20.2 mA
Brightness code = 0xFF 		–2% 2%
VREG_CS Regulated current sink headroom voltage 400 mV
VHR Current sink minimum headroom voltage ILED = 95% of nominal and 20.2 mA 200 mV
ILED = 95% of nominal and 20.2 mA 240
RDSON NMOS switch on resistance ISW = 100 mA 0.25 Ω
ICL NMOS switch current limit 2.7 V ≤ VIN ≤ 5.5 V 1000 mA
2.7 V ≤ VIN ≤ 5.5 V 880 1000 1120 mA
VOVP Output overvoltage protection ON threshold, 2.7 V ≤ VIN ≤ 5.5 V 41 V
ON threshold, 2.7 V ≤ VIN ≤ 5.5 V 40 42
Hysteresis 1
DMAX Maximum duty cycle 94%
DMIN Minimum duty cycle 10%
IQ Quiescent current into IN, device not switching ILED1 = ILED2 = ILED3 = 20.2 mA, feedback disabled 490 µA
IQ_SW Switching supply current ILED1 = ILED2 = ILED3 = 20.2 mA, VOUT = 32 V 1.35 mA
ISHDN Shutdown current 2.7 V ≤ VIN ≤ 5.5 V, HWEN = GND 1 µA
2.7 V ≤ VIN ≤ 5.5 V, HWEN = GND
−40°C ≤ TA ≤ +85°C		 2
ILED_MIN Minimum LED Current in ILED1, ILED2 or ILED3 Full-scale current =20.2 mA
Brightness code = 0x01, Mapping = Exponential		 9.5 µA
TSD Thermal Shutdown 140 °C
Hysteresis 15
LOGIC INPUTS/OUTPUTS (PWM1, PWM2, HWEN, SCL, SDA, INT)
VIL Input logic low 2.7 V ≤ VIN ≤ 5.5 V 0 0.4 V
VIH Input logic high 2.7 V ≤ VIN ≤ 5.5 V 1.2 VIN
VOL Output logic low (SCL, INT) 2.7 V ≤ VIN ≤ 5.5 V, ILOAD = 3 mA 0.4 V
RPWM PWM input internal pulldown resistance (PWM1, PWM2) 100 kΩ
AMBIENT LIGHT SENSOR INPUTS (ALS1, ALS2)
RALS1, RALS2 ALS pin internal pulldown resistors ALS1, ALS2 Resistor Select
Register = 0x0F, 2.7 V ≤ VIN ≤ 5.5 V		 2.44 kΩ
ALS1, ALS2 Resistor Select
Register = 0x0F, 2.7 V ≤ VIN ≤ 5.5 V 		2.29 2.59
VALS_REF Ambient light sensor reference voltage 2.7 V ≤ VIN ≤ 5.5 V 2 V
2.7 V ≤ VIN ≤ 5.5 V 1.94 2.06
VOS ALS input offset voltage
(Code 0-to-1 transition – VLSB)		 2.7 V ≤ VIN ≤ 5.5 V 2.5 mV
2.7 V ≤ VIN ≤ 5.5 V 0.8 4.2
tCONV Conversion time 154 µs
LSB ADC resolution 2.7V ≤ VIN ≤ 5.5V 7.84 mV
(1) All voltages are with respect to the potential at the GND pin.
(2) Minimum and Maximum limits are verified by design, test, or statistical analysis. Typical numbers are not verified, but do represent the most likely norm.
(3) All current sinks for the matching spec are assigned to the same control bank.
(4) LED current sink matching between ILED2 and ILED3 is given by taking the difference between either (ILED2 or ILED3) and the average current between the two, and dividing by the average current between the two (ILED2/3 – ILED(AVE))/ILED(AVE). This simplifies to (ILED2 – ILED3)/(ILED2 + ILED3). In this test, both ILED2 and ILED3 are assigned to Bank A.

6.6 I2C-Compatible Timing Specifications (SCL, SDA)

See(1)
MIN NOM MAX UNIT
t1 SCL (clock period) 2.5 µs
t2 Data In setup time to SCL high 100 ns
t3 Data out stable after SCL low 0 ns
t4 SDA low setup time to SCL low (start) 100 ns
t5 SDA high hold time after SCL high (stop) 100 ns
(1) SCL and SDA must be glitch-free in order for proper brightness control to be realized.

6.7 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ƒSW Switching frequency 2.7 V ≤ VIN ≤ 5.5 V 500 kHz
2.7 V ≤ VIN ≤ 5.5 V
−40°C ≤ TA ≤ 85°C		 450 550

6.8 Typical Characteristics

VIN = 3.6 V, LEDs (VF = 3.2 V at 20 mA, TA = 25°C), COUT = 1 µF, CIN = 2.2 µF, TA = 25°C unless otherwise specified.
LM3532 30115479.gif
HWEN = GND
Figure 1. Shutdown Current vs VIN
LM3532 30115482.gif
(ΔILED is worst case difference between all three strings)
Figure 3. Current Sink Matching vs VIN ILED1 to ILED2 To ILED3
LM3532 30115480.gif
2.44-kΩ Setting
Figure 5. Als Resistor Matching vs VIN
LM3532 30115477.gif
Figure 7. Differential Non Linearity vs Code
LM3532 30115473.gif
Figure 9. LED Current vs Headroom Voltage
LM3532 30115489.gif
Figure 2. Current Sink Matching vs VIN ILED2 To ILED3
LM3532 30115478.gif
2.44-kΩ Setting
Figure 4. ALS Resistance vs VIN RALS1
LM3532 30115476.gif
Figure 6. Integral Non Linearity vs Code (Endpoint Method)
LM3532 30115490.gif
Figure 8. Peak-to-Peak LED Current Ripple vs FPWM