11 Device and Documentation Support
11.1 Device Support
11.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
11.1.2 Device Nomenclature
VBATT Voltage supplying charger circuit.
VCAP Super-capacitor voltage at the end of the charge cycle and before a flash.
ICL Maximum current allowed to be drawn from the battery.
IFLASH LED current during the flash event.
tFLASH Desired flash duration.
CSC Super capacitor value.
VLED Flash diode forward voltage at IFLASH.
VHR The headroom required across the FET and the Sense resistor to maintain current sink regulation.
VFB The degeneration resistor RSENSE regulation voltage that in part sets IFLASH.
RDSON On-Resistance of NFET.
VRDSON The voltage drop across the current source FET.
VPUMP The initial SC voltage required for the Flash.
RSENSE Current set resistor.
VDROOP Voltage droop on the super-capacitor during a flash of duration tFLASH.
= IFLASH×tFLASH / CSC
RESR Super-capacitor ESR value.
VESR Voltage drop due to SC ESR.
VBAL Voltage drop due to LED ballast resistors
VOH Overhead charge voltage required for constant current regulation during the entire flash duration.
VPUMP VOH + VLED+ VESR = VFB + VRDSON + VESR + VLED + VDROOP + VBAL
11.2 Related Documentation
For additional information, see the following:
11.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.
11.4 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.
11.5 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.6 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
11.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.