SNOSB43C September 2011 – November 2016 LM3560
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
VIN, VSW, VOUT | –0.3 | 6 | V | |
VSCL, VSDA, VHWEN, VSTROBE, VTX1, VTX2, VLED1, VLED2, VLEDI/NTC | –0.3 | to the lesser of (VIN + 0.3 V) with 6 V maximum | V | |
Continuous power dissipation(2) | Internally limited | |||
Junction temperature, TJ-MAX | 150 | °C | ||
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Input voltage, VIN | 2.5 | 5.5 | V | |
Junction temperature, TJ | –40 | 125 | °C | |
Ambient temperature, TA(1) | –40 | 85 | °C |
THERMAL METRIC(1) | LM3560 | UNIT | |
---|---|---|---|
YZR (DSBGA) | |||
16 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 71.4 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 0.4 | °C/W |
RθJB | Junction-to-board thermal resistance | 12.4 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.3 | °C/W |
ψJB | Junction-to-board characterization parameter | 12.6 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |||
---|---|---|---|---|---|---|---|---|
CURRENT SOURCE SPECIFICATIONS | ||||||||
ILED | Current source accuracy | ILED1 + ILED2
3 V ≤ VIN ≤ 4.2 V VOUT = 4.5 V |
1000-mA flash current setting, per current source | –3.5% | 2000 | 3.5% | mA | |
1000-mA flash current setting, per current source –40°C ≤ TA ≤ 85°C |
–5% | 5% | ||||||
31.25-mA torch current, per current source | 62.5 | |||||||
31.25-mA torch current, per current source –40°C ≤ TA ≤ 85°C |
–10% | 10% | ||||||
VOUT – VLED1/2 | Current source regulation voltage | ILED = 2 A (ILED1 + ILED2), VOUT = 4.5 V | 300 | mV | ||||
VOVP | Output overvoltage protection trip point(3) | ON threshold | 5 | V | ||||
ON threshold, –40°C ≤ TA ≤ 85°C | 4.925 | 5.075 | ||||||
OFF threshold | 4.8 | |||||||
STEP-UP DC-DC CONVERTER SPECIFICATIONS | ||||||||
RPMOS | PMOS switch on-resistance | IPMOS = 1 A | 80 | mΩ | ||||
RNMOS | NMOS switch on-resistance | INMOS = 1 A | 65 | mΩ | ||||
ICL | Switch current limit(4) | CL bits = 00 | 1.6 | A | ||||
CL bits = 00, 3 V ≤ VIN ≤ 4.2 V –40°C ≤ TA ≤ 85°C |
1.44 | 1.76 | ||||||
CL bits = 01 | 2.3 | |||||||
CL bits = 01, 3 V ≤ VIN ≤ 4.2 V –40°C ≤ TA ≤ 85°C |
2.02 | 2.58 | ||||||
CL bits = 10 | 3 | |||||||
CL bits = 10, 3 V ≤ VIN ≤ 4.2 V –40°C ≤ TA ≤ 85°C |
2.64 | 3.36 | ||||||
CL bits = 11 | 3.6 | |||||||
CL bits = 11, 3 V ≤ VIN ≤ 4.2 V –40°C ≤ TA ≤ 85°C |
3.17 | 4.03 | ||||||
IOUT_SC | Output short-circuit current limit | VOUT < 2.3 V | 300 | mA | ||||
ILEDI/NTC | Indicator current | Message indicator register, bits[2:0] = 111 VLEDI/NTC = 2 V |
18 | mA | ||||
Message indicator register, bits[2:0] = 111, 3 V ≤ VIN ≤ 4.2 V VLEDI/NTC = 2 V, –40°C ≤ TA ≤ 85°C |
16 | 20 | ||||||
VTRIP | Comparator trip threshold | Configuration register 1, bit [4] = 1, | 1 | V | ||||
Configuration register 1, bit [4] = 1, 3 V ≤ VIN ≤ 4.2 V, –40°C ≤ TA ≤ 85°C |
0.97 | 1.03 | ||||||
ƒSW | Switching frequency | 2 | MHz | |||||
3 V ≤ VIN ≤ 4.2 V, –40°C ≤ TA ≤ 85°C | 1.8 | 2.2 | ||||||
tTIMEOUT | Timeout duration(5)(6) | 3 V ≤ VIN ≤ 4.2 V | –10% | 10% | ms | |||
IQ | Quiescent supply current | Device not switching, VOUT = 3 V | 900 | µA | ||||
Device switching, VOUT = 4.5 V | 1.97 | mA | ||||||
Indicate mode, message indicator register bits [2:0] = 111 | 590 | µA | ||||||
ISHDN | Shutdown supply current | 3 V ≤ VIN ≤ 4.2 V | 0.02 | µA | ||||
3 V ≤ VIN ≤ 4.2 V, –40°C ≤ TA ≤ 85°C | 1.25 | |||||||
ISTBY | Standby supply current | 1.25 | µA | |||||
3 V ≤ VIN ≤ 4.2 V, –40°C ≤ TA ≤ 85°C | 2 | |||||||
VIN_TH | VIN monitor threshold | VIN monitor register = 0x01 | 2.9 | V | ||||
VIN monitor register = 0x01, –40°C ≤ TA ≤ 85°C | 2.85 | 2.95 | ||||||
VIN_FLASH_TH | VIN flash monitor threshold | VIN monitor register = 0x08 | 2.9 | V | ||||
VIN monitor register = 0x08, –40°C ≤ TA ≤ 85°C | 2.85 | 2.95 | ||||||
tTX | Flash-to-torch LED current settling time | TX_ Low to high ILED1 + ILED2 = 2 A to 187.5 mA |
2 | µs | ||||
Torch-to-flash LED current Settling | TX_High to low ILED1 + ILED2 = 187.5 mA to 2 mA |
160 | ||||||
tD | Time from when ILED hits target until VLED data is available | ADC delay register bit [5] = 1 | 16 | µs | ||||
ADC delay register bit [5] = 0 ADC delay register bits [4:0] = 0000 |
250 | |||||||
VF_ADC | ADC threshold | VLED monitor register bits [3:0] = 1111 | 4.2 | V | ||||
VLED monitor register bits [3:0] = 1111 3 V ≤ VIN ≤ 4.2 V, –40°C ≤ TA ≤ 85°C |
4.05 | 4.35 | ||||||
HWEN, STROBE, TX1/TORCH/GPIO1, TX2/INT/GPIO2 VOLTAGE SPECIFICATIONS | ||||||||
VIL | Input logic low | 2.7 V ≤ VIN ≤ 4.2 V, –40°C ≤ TA ≤ 85°C | 0 | 0.4 | V | |||
VIH | Input logic high | 2.7 V ≤ VIN ≤ 4.2 V, –40°C ≤ TA ≤ 85°C | 1.2 | VIN | V | |||
RPD | Internal pulldown resistance on TX1, TX2, STROBE | 300 | kΩ | |||||
I2C-COMPATIBLE VOLTAGE SPECIFICATIONS (SCL, SDA) | ||||||||
VIL | Input logic low | 2.7 V ≤ VIN ≤ 4.2 V, –40°C ≤ TA ≤ 85°C | 0 | 0.4 | V | |||
VIH | Input logic high | 2.7 V ≤ VIN ≤ 4.2 V, –40°C ≤ TA ≤ 85°C | 1.3 | VIN | V | |||
VOL | Output logic low (SDA) | ILOAD = 3 mA 2.7 V ≤ VIN ≤ 4.2 V, –40°C ≤ TA ≤ 85°C |
0.4 | V |
MIN | MAX | UNIT | ||
---|---|---|---|---|
ƒSCL | SCL (clock frequency) | 0 | 400 | kHz |
tRISE | Rise time of both SDA and SCL | 20 ns + 0.1 × CBUS | 300 | ns |
tFALL | Fall time of both SDA and SCL | 20 ns + 0.1 × CBUS | 300 | ns |
tLOW | Low period of SCL clock | 1.3 | µs | |
tHIGH | High period of SCL clock | 600 | ns | |
tHD;STA | Hold time for start (or repeated start) condition | 600 | ns | |
tSU:STA | Set-up time for a repeated start | 600 | ns | |
tHD:DAT | Data hold time | 0 | ns | |
tSU:DAT | Data set-up time | 100 | ns | |
tSU:STO | Set-up time for stop condition | 600 | ns | |
tVD:DAT | Data valid time | 900 | ns | |
tVD;ACK | Data valid acknowledge time | 900 | ns | |
tBUF | Bus-free time between a start and stop condition | 1.3 | µs |
Highest 4 Flash Brightness Codes |
Lower Middle 4 Flash Brightness Codes |
VLED = 2.5 V | Indicate Codes 100 - 111 |
HWEN = GND |
VIN_FLASH_TH = 3.2 V | TX2 Set For Interrupt Output (INT) | |
Circuit Of Figure 27 (Note 1) |
TX2 Set for Interrupt Output (INT) | R3 = 1.3 kΩ | |
Circuit of Figure 42 | RNTC = 10 kΩ at 25°C | |
NTC Set to Force Torch Mode | Beta = 3380 k |
3.6-A Setting | See Note 1 |
2.3-A Setting | See Note 2 |
Upper Middle 4 Flash Brightness Codes |
Lowest 4 Flash Brightness Codes |
VLED = 2.5 V | Indicate Codes 000 - 011 |
HWEN = VIN |
VIN_TH = 3.2 V | TX2 Set For Interrupt Output (INT) | |
Circuit of Figure 27 (Note 2) | Force Torch Mode |
Force Torch |
3-A Setting | See Note 1 |
1.6-A Setting | See Note 2 |
1. The typical curve for current limit is measured in closed loop using Figure 41, and increasing IOUT until the peak inductor current stops increasing. The value given in Electrical Characteristics is measured open loop and is found by forcing current into SW until the current limit comparator threshold is reached. Closed loop data appears higher due to the delay between the comparator trip point and the NFET turning off. This delay allows the closed loop inductor current to ramp higher after the trip point by approximately 20 ns × VIN/L.
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1. The typical curve for overvoltage protection (OVP) is measured in closed loop using Figure 41 . The OVP value is found by forcing an open circuit in the LED1 and LED2 path and recording the peak value of VOUT. The value given in Electrical Characteristics is found in an open loop configuration by ramping the voltage at OUT until the OVP comparator trips. The closed loop data can appear higher due to the stored energy in the inductor being dumped into the output capacitor after the OVP comparator trips. Worst case is an open circuit condition where the output voltage can continue to rise after the OVP comparator trips by approximately IIN × sqrt(L/COUT).
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