JAJS771H October   1999  – October 2018 LM4041-N , LM4041-N-Q1

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      ブロック図
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
    2.     Pin Functions: ADJ Pinouts
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  LM4041-N-xx 1.2 Electrical Characteristics (Industrial Temperature Range)
    6. 6.6  LM4041-N-xx 1.2 Electrical Characteristics (Industrial Temperature Range)
    7. 6.7  LM4041-N-xx 1.2 Electrical Characteristics (Extended Temperature Range)
    8. 6.8  LM4041-N-xx ADJ (Adjustable) Electrical Characteristics (Industrial Temperature Range)
    9. 6.9  LM4041-N-xx ADJ (Adjustable) Electrical Characteristics (Extended Temperature Range)
    10. 6.10 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Shunt Regulator
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Adjustable Shunt Regulator
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detail Design Procedure
      3. 9.2.3 Bounded Amplifier
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detail Design Procedure
        3. 9.2.3.3 Application Curve
      4. 9.2.4 Voltage Level Detector
        1. 9.2.4.1 Design Procedure
        2. 9.2.4.2 Detail Design Procedure
      5. 9.2.5 Precision Current Sink and Source
        1. 9.2.5.1 Design Requirements
        2. 9.2.5.2 Detailed Design Procedure
      6. 9.2.6 100-mA Current Source
        1. 9.2.6.1 Design Requirements
        2. 9.2.6.2 Detailed Design Procedure
      7. 9.2.7 LM4041 in Clamp Circuits
        1. 9.2.7.1 Design Requirements
        2. 9.2.7.2 Detailed Design Procedure
      8. 9.2.8 Floating Current Detector
        1. 9.2.8.1 Design Requirement
        2. 9.2.8.2 Detailed Design Procedure
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 関連リンク
    2. 12.2 ドキュメントの更新通知を受け取る方法
    3. 12.3 コミュニティ・リソース
    4. 12.4 商標
    5. 12.5 静電気放電に関する注意事項
    6. 12.6 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6.5 LM4041-N-xx 1.2 Electrical Characteristics (Industrial Temperature Range)

All limits TA = TJ = 25°C for the LM4041xAIM3, LM4041xBIM3, LM4041AIZ, LM4041BIZ and LM4041BIM7 devices, unless otherwise specified. The grades A and B designate initial reverse breakdown voltage tolerances of ±0.1% and ±0.2%, respectively.
PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT
VR Reverse breakdown voltage IR = 100 μA 1.225 V
Reverse breakdown voltage tolerance(3) IR = 100 μA LM4041AIM3, LM4041QAIM3
LM4041AIM3, LM4041AIZ		 ±1.2 mV
LM4041BIM3, LM4041QBIM3
LM4041BIZ, LM4041BIM7		 ±2.4
TA = TJ = TMIN to TMAX LM4041AIM3, LM4041QAIM3
LM4041AIM3, LM4041AIZ		 ±9.2
LM4041BIM3, LM4041QBIM3
LM4041BIZ, LM4041BIM7		 ±10.4
IRMIN Minimum operating current TA = TJ = 25°C 45 60 μA
TA = TJ = TMIN to TMAX 65
ΔVR/ΔT Average reverse breakdown
voltage temperature
Coefficient(3) 		IR= 10 mA ±20 ppm/°C
IR = 1 mA TA = TJ = 25°C ±15
TA = TJ = TMIN to TMAX ±100
IR = 100 μA ±15
ΔVR/ΔIR Reverse breakdown voltage change with operating
current change(4) 		IRMIN ≤ IR ≤ 1 mA TA = TJ = 25°C 0.7 1.5 mV
TA = TJ = TMIN to TMAX 2
1 mA ≤ IR ≤ 12 mA TA = TJ = 25°C 4 6
TA = TJ = TMIN to TMAX 8
ZR Reverse dynamic impedance IR = 1 mA, f = 120 Hz,
IAC= 0.1 IR 		0.5 1.5 Ω
eN Wideband noise IR = 100 μA
10 Hz ≤ f ≤ 10 kHz		 20 μVrms
ΔVR Reverse breakdown voltage long-term stability t = 1000 hrs
T = 25°C ±0.1°C
IR = 100 μA		 120 ppm
VHYST Thermal hysteresis(5) ΔT = −40°C to +125°C 0.08%
(1) Limits are 100% production tested at 25°C. Limits over temperature are ensured through correlation using Statistical Quality Control (SQC) methods. The limits are used to calculate AOQL.
(2) Typicals are at TJ = 25°C and represent most likely parametric norm.
(3) The overtemperature limit for Reverse Breakdown Voltage Tolerance is defined as the room temperature Reverse Breakdown Voltage Tolerance ±[(ΔVR↱ΔT)(max ΔT)(VR)]. Where, ΔVR/ΔT is the VR temperature coefficient, maxΔT is the maximum difference in temperature from the reference point of 25 °C to T MAX or TMIN, and VR is the reverse breakdown voltage. The total over-temperature tolerance for the different grades in the industrial temperature range where maxΔT = 65°C is shown below:
A-grade: ±0.75% = ±0.1% ±100 ppm/°C × 65°C
B-grade: ±0.85% = ±0.2% ±100 ppm/°C × 65°C
C-grade: ±1.15% = ±0.5% ±100 ppm/°C × 65°C
D-grade: ±1.98% = ±1.0% ±150 ppm/°C × 65°C
E-grade: ±2.98% = ±2.0% ±150 ppm/°C × 65°C
The total over-temperature tolerance for the different grades in the extended temperature range where max ΔT = 100 °C is shown below:
B-grade: ±1.2% = ±0.2% ±100 ppm/°C × 100°C
C-grade: ±1.5% = ±0.5% ±100 ppm/°C × 100°C
D-grade: ±2.5% = ±1.0% ±150 ppm/°C × 100°C
E-grade: ±4.5% = ±2.0% ±150 ppm/°C × 100°C
Therefore, as an example, the A-grade LM4041-N 1.2 has an over-temperature Reverse Breakdown Voltage tolerance of ±1.2 V × 0.75% = ±9.2 mV.
(4) Load regulation is measured on pulse basis from no load to the specified load current. Output changes due to die temperature change must be taken into account separately.
(5) Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature –40°C and the +25°C measurement after cycling to temperature +125°C.