JAJSBZ3B June 2014 – March 2018 LM46000
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY VOLTAGE (VIN PINS) | ||||||
VIN-MIN-ST | Minimum input voltage for startup | 3.8 | V | |||
ISHDN | Shutdown quiescent current | VEN = 0 V | 2.3 | 5 | µA | |
IQ-NONSW | Operating quiescent current (non-switching) from VIN | VEN = 3.3 V
VFB = 1.5 V VBIAS = 3.4 V external |
7 | 13 | µA | |
IBIAS-NONSW | Operating quiescent current (non-switching) from external VBIAS | VEN = 3.3 V
VFB = 1.5 V VBIAS = 3.4 V external |
85 | 140 | µA | |
IQ-SW | Operating quiescent current (switching) | VEN = 3.3 V
IOUT = 0 A RT = open VBIAS = VOUT = 3.3 V RFBT = 1 Meg |
24 | µA | ||
ENABLE (EN PIN) | ||||||
VEN-VCC-H | Voltage level to enable the internal LDO output VCC | VENABLE high level | 1.2 | V | ||
VEN-VCC-L | Voltage level to disable the internal LDO output VCC | VENABLE low level | 0.4 | V | ||
VEN-VOUT-H | Precision enable level for switching and regulator output: VOUT | VENABLE high level | 2 | 2.1 | 2.42 | V |
VEN-VOUT-HYS | Hysteresis voltage between VOUT precision enable and disable thresholds | VENABLE hysteresis | –305 | mV | ||
ILKG-EN | Enable input leakage current | VEN = 3.3 V | 0.8 | 1.75 | µA | |
INTERNAL LDO (VCC PIN AND BIAS PIN) | ||||||
VCC | Internal LDO output voltage VCC | VIN ≥ 3.8 V | 3.3 | V | ||
VCC-UVLO | Undervoltage lockout (UVLO) thresholds for VCC | VCC rising threshold | 3.14 | V | ||
Hysteresis voltage between rising and falling thresholds | –567 | mV | ||||
VBIAS-ON | Internal LDO input change over threshold to BIAS | VBIAS rising threshold | 2.96 | 3.2 | V | |
Hysteresis voltage between rising and falling thresholds | –71 | mV | ||||
VOLTAGE REFERENCE (FB PIN) | ||||||
VFB | Feedback voltage | TJ = 25ºC | 1.009 | 1.016 | 1.023 | V |
TJ = –40ºC to 85ºC | 0.999 | 1.016 | 1.031 | |||
TJ = –40ºC to 125ºC | 0.999 | 1.016 | 1.039 | |||
ILKG-FB | Input leakage current at FB pin | FB = 1.016 V | 0.2 | 65 | nA | |
THERMAL SHUTDOWN | ||||||
TSD(1) | Thermal shutdown | Shutdown threshold | 160 | ºC | ||
Recovery threshold | 150 | ºC | ||||
CURRENT LIMIT AND HICCUP | ||||||
IHS-LIMIT | Peak inductor current limit | 1.05 | 1.35 | 1.56 | A | |
ILS-LIMIT | Valley inductor current limit | 0.46 | 0.6 | 0.75 | A | |
SOFT START (SS/TRK PIN) | ||||||
ISSC | Soft-start charge current | 1.17 | 2.2 | 2.85 | µA | |
RSSD | Soft-start discharge resistance | UVLO, TSD, OCP, or EN = 0 V | 16 | kΩ | ||
POWER GOOD (PGOOD PIN) | ||||||
VPGOOD-HIGH | Power-good flag overvoltage tripping threshold | % of FB voltage | 110% | 113% | ||
VPGOOD-LOW | Power-good flag undervoltage tripping threshold | % of FB voltage | 83% | 90% | ||
VPGOOD-HYS | Power-good flag recovery hysteresis | % of FB voltage | 6% | |||
RPGOOD | PGOOD pin pulldown resistance when power bad | VEN = 3.3 V | 40 | 125 | Ω | |
VEN = 0 V | 60 | 150 | ||||
MOSFETS(2) | ||||||
RDS-ON-HS | High-side MOSFET ON-resistance | IOUT = 0.5 A
VBIAS = VOUT = 3.3 V |
419 | mΩ | ||
RDS-ON-LS | Low-side MOSFET ON-resistance | IOUT = 0.5 A
VBIAS = VOUT = 3.3 V |
231 | mΩ |