SNVS265C December 2003 – January 2016 LM5025
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Input voltage | VIN to GND | –0.3 | 100 | V |
VCC to GND | –0.3 | 16 | ||
CS1, CS2 to GND | –0.3 | 1 | V | |
All other inputs to GND | –0.3 | 7 | V | |
Junction temperature, TJ | 150 | °C | ||
Storage temperature, Tstg | –55 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge(1) | Human-body model (HBM), per ANSI/ESDA/JEDEC JS01(2) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(3) | ±500 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VIN voltage | 13 | 90 | V | ||
External voltage applied to VCC | 8 | 15 | V | ||
Operating junction temperature | –40 | 125 | °C |
THERMAL METRIC(1) | LM5025 | UNIT | ||
---|---|---|---|---|
PW (TSSOP) | NHQ (WSON) | |||
16-PINS | 16-PINS | |||
RθJA | Junction-to-ambient thermal resistance | 98.7 | 30 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 27.8 | 25.9 | °C/W |
RθJB | Junction-to-board thermal resistance | 44.3 | 9.3 | °C/W |
ψJT | Junction-to-top characterization parameter | 1.2 | 0.2 | °C/W |
ψJB | Junction-to-board characterization parameter | 43.6 | 9.5 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | — | 2.3 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STARTUP REGULATOR | |||||||
VCC Reg | VCC regulation | No load | TJ = 25°C | 7.6 | V | ||
TJ = –40°C to 125°C | 7.3 | 7.9 | |||||
VCC current limit(2) | TJ = 25°C | 25 | mA | ||||
TJ = –40°C to 125°C | 20 | ||||||
I-VIN | Startup regulator leakage (external Vcc Supply) | VIN = 100 V | TJ = 25°C | 165 | µA | ||
TJ = –40°C to 125°C | 500 | ||||||
Shutdown current (Iin) | UVLO = 0 V | TJ = 25°C | 350 | µA | |||
TJ = –40°C to 125°C | 450 | ||||||
VCC SUPPLY | |||||||
VCC undervoltage lockout voltage (positive going Vcc) | TJ = 25°C | VCC Reg – 120 mV | V | ||||
TJ = –40°C to 125°C | VCC Reg – 220 mV | ||||||
VCC undervoltage hysteresis | TJ = 25°C | 1.5 | V | ||||
TJ = –40°C to 125°C | 1 | 2 | |||||
VCC supply current (ICC) | Cgate = 0 | TJ = –40°C to 125°C | 4.2 | mA | |||
REFERENCE SUPPLY | |||||||
VREF | Ref voltage | IREF = 0 mA | TJ = 25°C | 5 | V | ||
TJ = –40°C to 125°C | 4.85 | 5.15 | |||||
Ref voltage regulation | IREF = 0 to 10 mA | TJ = 25°C | 25 | mV | |||
TJ = –40°C to 125°C | 50 | ||||||
Ref current limit | TJ = 25°C | 20 | mA | ||||
TJ = –40°C to 125°C | 10 | ||||||
CURRENT LIMIT | |||||||
CS1 Prop | CS1 delay to output | CS1 step from 0 to 0.4 V, Time to onset of OUT transition (90%), Cgate = 0 |
40 | ns | |||
CS2 Prop | CS2 delay to output | CS2 step from 0 to 0.4 V, Time to onset of OUT transition (90%), Cgate = 0 |
50 | ns | |||
Leading edge blanking time | 50 | ns | |||||
Cycle by cycle threshold voltage (CS1) | TJ = 25°C | 0.25 | V | ||||
TJ = –40°C to 125°C | 0.22 | 0.28 | |||||
Cycle skip threshold voltage (CS2) | Resets SS capacitor; auto restart | TJ = 25°C | 0.25 | V | |||
TJ = –40°C to 125°C | 0.22 | 0.28 | |||||
CS sink impedance (clocked) | ICS = 10 mA | TJ = 25°C | 30 | Ω | |||
TJ = –40°C to 125°C | 50 | ||||||
SOFT-START | |||||||
Soft-start current source normal | TJ = 25°C | 22 | µA | ||||
TJ = –40°C to 125°C | 17 | 27 | |||||
Soft-start current source following a CS2 event | TJ = 25°C | 1 | µA | ||||
TJ = –40°C to 125°C | 0.5 | 1.5 | |||||
OSCILLATOR | |||||||
Frequency1 | TJ = 25°C | 180 | 200 | 220 | kHz | ||
TJ = –40°C to 125°C | 175 | 225 | |||||
Frequency2 | RT = 10.4 KΩ | TJ = 25°C | 580 | kHz | |||
TJ = –40°C to 125°C | 500 | 660 | |||||
Sync frequency | TJ = –40°C to 125°C | 160 | kHz | ||||
Sync threshold | 2 | V | |||||
Minimum sync pulse width | TJ = –40°C to 125°C | 100 | ns | ||||
PWM COMPARATOR | |||||||
Delay to output | COMP step 5 V to 0 V, Time to onset of OUT_A transition low |
40 | ns | ||||
Duty cycle | TJ = –40°C to 125°C | 0% | 80% | ||||
COMP to PWM offset | TJ = 25°C | 1 | V | ||||
TJ = –40°C to 125°C | 0.7 | 1.3 | |||||
COMP open circuit voltage | TJ = –40°C to 125°C | 4.3 | 5.9 | V | |||
COMP short circuit current | COMP = 0 V | TJ = 25°C | 1 | mA | |||
TJ = –40°C to 125°C | 0.6 | 1.4 | |||||
VOLT × SECOND CLAMP | |||||||
Ramp clamp level | Delta RAMP measured from onset of OUT_A to Ramp peak, COMP = 5 V |
TJ = 25°C | 2.5 | V | |||
TJ = –40°C to 125°C | 2.4 | 2.6 | |||||
UVLO SHUTDOWN | |||||||
Undervoltage shutdown threshold | TJ = 25°C | 2.5 | V | ||||
TJ = –40°C to 125°C | 2.44 | 2.56 | |||||
Undervoltage shutdown hysteresis | TJ = 25°C | 20 | µA | ||||
TJ = –40°C to 125°C | 16 | 24 | |||||
OUTPUT SECTION | |||||||
OUT_A high saturation | MOS device at Iout = –10 mA | TJ = 25°C | 5 | Ω | |||
TJ = –40°C to 125°C | 10 | ||||||
OUT_A low saturation | MOS device at Iout = 10 mA | TJ = 25°C | 6 | Ω | |||
TJ = –40°C to 125°C | 9 | ||||||
OUT_B high saturation | MOS device at Iout = –10 mA | TJ = 25°C | 10 | Ω | |||
TJ = –40°C to 125°C | 20 | ||||||
OUT_B low saturation | MOS device at Iout = 10 mA | TJ = 25°C | 12 | Ω | |||
TJ = –40°C to 125°C | 18 | ||||||
OUTPUT_B peak current sink | Bipolar device at Vcc/2 | 1 | A | ||||
OUTPUT_A peak current sink | Bipolar device at Vcc/2 | 3 | A | ||||
OUTPUT_A rise time | Cgate = 2.2 nF | 20 | ns | ||||
OUTPUT_A fall time | Cgate = 2.2 nF | 15 | ns | ||||
OUTPUT_B rise time | Cgate = 1 nF | 20 | ns | ||||
OUTPUT_B fall time | Cgate = 1 nF | 15 | ns | ||||
OUTPUT TIMING CONTROL | |||||||
Overlap time | RSET = 38 kΩ connected to GND, 50% to 50% transitions | TJ = 25°C | 105 | ns | |||
TJ = –40°C to 125°C | 75 | 135 | |||||
Deadtime | RSET = 29.5 kΩ connected to REF, 50% to 50% transitions | TJ = 25°C | 105 | ns | |||
TJ = –40°C to 125°C | 75 | 135 | |||||
THERMAL SHUTDOWN | |||||||
TSD | Thermal shutdown threshold | 165 | °C | ||||
Thermal shutdown hysteresis | 25 | °C |