JAJSKQ9B December 2021 – December 2022 LM5123-Q1
PRODUCTION DATA
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When SS is greater than 1.5 V, the device enters deep sleep mode after at least 40 μs in OVP status. The device re-enters active mode if VOUT falls down below VOVP. During bypass operation, the loss, which is caused by the body diode of the high-side MOSFET, is minimized. See Section 8.4.1.5 for more information.