JAJSDA5B November   2017  – November 2020 LM5145

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Pin Configuration and Functions
    1. 6.1 Wettable Flanks
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Input Range (VIN)
      2. 8.3.2  Output Voltage Setpoint and Accuracy (FB)
      3. 8.3.3  High-Voltage Bias Supply Regulator (VCC)
      4. 8.3.4  Precision Enable (EN/UVLO)
      5. 8.3.5  Power Good Monitor (PGOOD)
      6. 8.3.6  Switching Frequency (RT, SYNCIN)
        1. 8.3.6.1 Frequency Adjust
        2. 8.3.6.2 Clock Synchronization
      7. 8.3.7  Configurable Soft Start (SS/TRK)
        1. 8.3.7.1 Tracking
      8. 8.3.8  Voltage-Mode Control (COMP)
      9. 8.3.9  Gate Drivers (LO, HO)
      10. 8.3.10 Current Sensing and Overcurrent Protection (ILIM)
      11. 8.3.11 OCP Duty Cycle Limiter
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown Mode
      2. 8.4.2 Standby Mode
      3. 8.4.3 Active Mode
      4. 8.4.4 Diode Emulation Mode
      5. 8.4.5 Thermal Shutdown
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Design and Implementation
      2. 9.1.2 Power Train Components
        1. 9.1.2.1 Inductor
        2. 9.1.2.2 Output Capacitors
        3. 9.1.2.3 Input Capacitors
        4. 9.1.2.4 Power MOSFETs
      3. 9.1.3 Control Loop Compensation
      4. 9.1.4 EMI Filter Design
    2. 9.2 Typical Applications
      1. 9.2.1 Design 1 – 20-A High-Efficiency Synchronous Buck Regulator for Telecom Power Applications
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Custom Design With WEBENCH® Tools
        4. 9.2.1.4 Application Curves
      2. 9.2.2 Design 2 – High Density, 12-V, 10-A Rail With LDO Low-Noise Auxiliary Output for RF Power Applications
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
      3. 9.2.3 Design 3 – 150-W, Regulated 24-V Rail for Commercial Drone Applications With Output Voltage Tracking Feature
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
        3. 9.2.3.3 Application Curves
      4. 9.2.4 Design 4 – Powering a Multicore DSP From a 24-V or 48-V Rail
        1. 9.2.4.1 Design Requirements
        2. 9.2.4.2 Detailed Design Procedure
        3. 9.2.4.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Power Stage Layout
      2. 11.1.2 Gate Drive Layout
      3. 11.1.3 PWM Controller Layout
      4. 11.1.4 Thermal Design and Layout
      5. 11.1.5 Ground Plane Design
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
      2. 12.1.2 Development Support
      3. 12.1.3 Custom Design With WEBENCH® Tools
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
        1. 12.2.1.1 PCB Layout Resources
        2. 12.2.1.2 Thermal Design Resources
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Support Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • RGY|20
サーマルパッド・メカニカル・データ
発注情報

8.3.9 Gate Drivers (LO, HO)

The LM5145 gate driver impedances are low enough to perform effectively in high output current applications where large die-size or paralleled MOSFETs with correspondingly large gate charge, QG, are used. Measured at VVCC = 7.5 V, the low-side driver of the LM5145 has a low impedance pulldown path of 0.9 Ω to minimize the effect of dv/dt induced turn-on, particularly with low gate-threshold voltage MOSFETs. Similarly, the high-side driver has 1.5-Ω and 0.9-Ω pullup and pulldown impedances, respectively, for faster switching transition times, lower switching loss, and greater efficiency.

The high-side gate driver works in conjunction with an integrated bootstrap diode and external bootstrap capacitor, CBST. When the low-side MOSFET conducts, the SW voltage is approximately at 0 V and CBST is charged from VCC through the integrated boot diode. Connect a 0.1-μF or larger ceramic capacitor close to the BST and SW pins.

Furthermore, there is a proprietary adaptive dead-time control on both switching edges to prevent shoot-through and cross-conduction, minimize body diode conduction time, and reduce body diode reverse recovery losses.