SNVSAD9 April   2016 LM5175-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Simplified Schematic
  5. 5 Revision History
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Fixed Frequency Valley/Peak Current Mode Control with Slope Compensation
      2. 8.3.2  VCC Regulator and Optional BIAS Input
      3. 8.3.3  Enable/UVLO
      4. 8.3.4  Soft-Start
      5. 8.3.5  Overcurrent Protection
      6. 8.3.6  Average Input/Output Current Limiting
      7. 8.3.7  CCM/DCM Operation
      8. 8.3.8  Frequency and Synchronization (RT/SYNC)
      9. 8.3.9  Frequency Dithering
      10. 8.3.10 Output Overvoltage Protection (OVP)
      11. 8.3.11 Power Good (PGOOD)
      12. 8.3.12 Gm Error Amplifier
      13. 8.3.13 Integrated Gate Drivers
      14. 8.3.14 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown, Standby, and Operating Modes
      2. 8.4.2 MODE Pin Configuration
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Frequency
        2. 9.2.2.2  VOUT
        3. 9.2.2.3  Inductor Selection
        4. 9.2.2.4  Output Capacitor
        5. 9.2.2.5  Input Capacitor
        6. 9.2.2.6  Sense Resistor (RSENSE)
        7. 9.2.2.7  Slope Compensation
        8. 9.2.2.8  UVLO
        9. 9.2.2.9  Soft-Start Capacitor
        10. 9.2.2.10 Dither Capacitor
        11. 9.2.2.11 MOSFETs QH1 and QL1
        12. 9.2.2.12 MOSFETs QH2 and QL2
        13. 9.2.2.13 Frequency Compensation
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Package Option Addendum
      1. 13.1.1 Packaging Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7 Specifications

7.1 Absolute Maximum Ratings(1)

MIN MAX UNIT
VIN, EN/UVLO, VISNS, VOSNS, ISNS(+), ISNS(–) –0.3 60 V
BIAS –0.3 40
FB, SS, DITH, SLOPE, COMP –0.3 3.6
RT/SYNC -0.3 6
SW1, SW2 –1 60
SW1, SW2 (20 ns transient) –3.0 65
VCC, MODE, PGOOD –0.3 8.5
LDRV1, LDRV2 –0.3 8.5
BOOT1, HDRV1 with respect to SW1 –0.3 8.5
BOOT2, HDRV2 with respect to SW2 –0.3 8.5
BOOT1, BOOT2 –0.3 68
CS, CSG –0.3 0.3
Maximum junction temperature(2) –40 150 °C
Storage temperature, Tstg -65 150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) High junction temperatures degrade operating lifetimes. Operating lifetime is de-rated for junction temperatures greater than 125°C.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V
Charged-device model (CDM), per AEC Q100-011 All pins ±500
Corner pins ±750
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)(1)
MIN NOM MAX UNIT
VIN Input voltage range 3.5 42 V
BIAS Bias supply voltage range 8 36
VOUT Output voltage range 0.8 55
EN/UVLO Enable voltage range 0 42
ISNS(+), ISNS(-) Average current sense common mode range 0 55
TJ Operating temperature range(2) –40 150 °C
Fsw Operating frequency range 100 600 kHz
(1) Recommended Operating Conditions are conditions under the device is intended to be functional. For specifications and test conditions, see Electrical Characteristics .
(2) High junction temperatures degrade operating lifetimes. Operating lifetime is de-rated for junction temperatures greater than 125°C.

7.4 Thermal Information

THERMAL METRIC(1) LM5175-Q1 UNIT
HTSSOP (PWP)
28 PINS
RθJA Junction-to-ambient thermal resistance 33.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 17.7
RθJB Junction-to-board thermal resistance 14.9
ψJT Junction-to-top characterization parameter 0.4
ψJB Junction-to-board characterization parameter 14.7
RθJC(bot) Junction-to-case (bottom) thermal resistance 1.1
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

Typical values correspond to TJ = 25°C. Minimum and maximum limits apply over the TJ = –40°C to 125°C junction temperature range unless otherwise stated. VIN = 24 V unless otherwise stated.(1)(2)
PARAMETER TEST CONDITION MIN TYP MAX UNIT
SUPPLY CURRENT
IQ VIN shutdown current VEN/UVLO = 0 V 1.4 10 µA
VIN operating current VEN/UVLO = 2 V, VFB = 0.9 V 1.65 4 mA
VCC
VVCC(VIN) Regulation voltage VBIAS = 0 V, VCC open 6.95 7.35 7.88 V
VUV(VCC) VCC Undervoltage lockout VCC increasing 3.11 3.27 3.43
Undervoltage hysteresis 160 mV
IVCC VCC current limit VVCC = 0 V 65 mA
ROUT(VCC) VCC regulator output impedance IVCC = 30 mA, VIN = 3.5 V 9.3 16 Ω
BIAS
VBIAS(SW) BIAS switchover voltage VIN = 24 V 7.25 8 8.75 V
EN/UVLO
VEN(STBY) Standby threshold EN/UVLO rising 0.55 0.79 0.97 V
IEN(STBY) Standby source current VEN/UVLO = 1.1 V 1 2 3 µA
VEN(OP) Operating threshold EN/UVLO rising 1.15 1.23 1.29 V
ΔIHYS(OP) Operating hysteresis current VEN/UVLO = 1.5 V 1.5 3.5 5.5 µA
SS
ISS Soft-start pull up current VSS = 0 V 4.0 5.65 7.25 µA
VSS(CL) SS clamp voltage SS open 1.27 V
VFB– VSS FB to SS offset VSS = 0 V -15 mV
EA (ERROR AMPLIFIER)
VREF Feedback reference voltage FB = COMP 0.788 0.800 0.812 V
gmEA Error amplifier gm 1.27 mS
ISINK/ISOURCE COMP sink/source current VFB=VREF ± 300 mV 280 µA
ROUT Amplifier output resistance 20 MΩ
BW Unity gain bandwidth 2 MHz
IBIAS(FB) Feedback pin input bias current FB in regulation 100 nA
FREQUENCY
fSW(1) Switching Frequency 1 RT = 133 kΩ 180 200 220 kHz
fSW(2) Switching Frequency 2 RT = 47 kΩ 430 500 565
DITHER
IDITHER Dither source/sink current 10.5 µA
VDITHER Dither high threshold 1.27 V
Dither low threshold 1.16
SYNC
VSYNC Sync input high threshold 2.1 V
Sync input low threshold 1.2
PWSYNC Sync input pulse width 75 500 ns
CURRENT LIMIT
VCS(BUCK) Buck current limit threshold (Valley) VIN = VVISNS = 24 V, VVOSNS = 12 V, VSLOPE = 0 V, TJ = 25°C 53.2 76 98 mV
VCS(BOOST) Boost current limit threshold (Peak) VIN = VVISNS = 12 V, VVOSNS = 24 V, VSLOPE = 0 V, TJ = 25°C 114 160 202
IBIAS(CS/CSG) CS/CSG pin bias current VCS = VCSG = 0 V –75 µA
IOFFSET(CS/CSG) CSG pin bias current VCS = VCSG = 0 V 14
CONSTANT CURRENT LOOP
VSNS Average current loop regulation target VISNS(-) = 24 V, sweep ISNS(+), VSS = 0.8 V 43 50 57 mV
ISNS ISNS(+)/ISNS(–) pin bias currents VISNS(+) = VISNS(–) = VIN = 24 V 7 µA
Gm gm of soft-start pull down amplifier VISNS(+)–VISNS(–) = 50 mV, VSS = 0.5 V 1 mS
SLOPE
ISLOPE Buck adaptive slope current VVISNS = 24 V, VVOSNS = 12 V, VSLOPE = 0 V 24 30 35 µA
Boost adaptive slope current VVISNS = 12 V, VVOSNS = 18 V, VSLOPE = 0 V 13 17 21
gmSLOPE Slope compensation amplifier gm 2 µS
MODE
IMODE Source current out of MODE pin 17 20 23 µA
VDCM_HIC DCM with hiccup threshold 0.60 0.7 0.76 V
VCCM_HIC CCM with hiccup threshold 1.18 1.28 1.38
VCCM CCM no hiccup threshold 2.22 2.4 2.6
PGOOD
VPGD PGOOD trip threshold for falling FB Measured with respect to VREF –9%
PGOOD trip threshold for rising FB Measured with respect to VREF 10%
Hysteresis 2%
ILEAK(PGD) PGOOD leakage current 100 nA
ISINK(PGD) PGOOD sink current VPGOOD = 0.4 V 2 4.2 6.5 mA
OUTPUT OVP
VOVP Output overvoltage threshold At the FB pin 0.86 V
Hysteresis 21 mV
NMOS DRIVERS
IHDRV1,2 Driver peak source current VBOOT– VSW = 7 V 1.8 A
Driver peak sink current VBOOT– VSW = 7 V 2.2
ILDRV1,2 Driver peak source current 1.8
Driver peak sink current 2.2
RHDRV1,2 Driver pull up resistance VBOOT– VSW = 7 V 1.9 Ω
Driver pull down resistance VBOOT - VSW = 7 V 1.3
VUV(BOOT1,2) BOOT1,2 to SW1,2 UVLO threshold HDRV1,2 shut off 2.73 V
BOOT1,2 to SW1,2 UVLO hysteresis HDRV1,2 start switching 280 mV
BOOT1,2 to SW1,2 threshold for refresh pulse 4.45 V
RLDRV1,2 Driver pull up resistance 2 Ω
Driver pull down resistance 1.5
tDT1 Dead time HDRV1,2 off to LDRV1,2 on 55 ns
tDT2 Dead time LDRV1,2 off to HDRV1,2 on 55
THERMAL SHUTDOWN
TSD Thermal shutdown temperature 165 °C
TSD(HYS) Thermal shutdown hysteresis 15
(1) All minimum and maximum limits are specified by correlating the electrical characteristics to process and temperature variations and applying statistical process control.
(2) The junction temperature (TJ in °C) is calculated from the ambient temperature (TA in °C) and power dissipation (PD in Watts) as follows: TJ = TA + (PD • RθJA) where RθJA (in °C/W) is the package thermal impedance provided in the Thermal Information section.

7.6 Typical Characteristics

At TA = 25°C, unless otherwise stated.
LM5175-Q1 D009_SNVA37.gif
VOUT=12 V Fsw=300 kHz L1=4.7 μH
IOUT=3 A
Figure 1. Efficiency vs VIN
LM5175-Q1 D004_snva37.gif
Figure 3. Oscillator Frequency
LM5175-Q1 D006_snva37.gif
Figure 5. IIN Standby
LM5175-Q1 D010_SNVA37.gif
Figure 7. IIN Shutdown vs VIN
LM5175-Q1 D012_SNVA37.gif
Figure 9. Buck Current Limit vs Temperature
LM5175-Q1 D014_SNVA37.gif
Figure 11. VREF vs Temperature
LM5175-Q1 fccm_boost.gif
VOUT=12 V VIN=6 V
Figure 13. Forced CCM Operation (Boost)
LM5175-Q1 loadtr24vin_2a_4a.gif
VIN=24 V VOUT=12 V Load 2A to 4A
Figure 15. Load Step (Buck)
LM5175-Q1 loadtr12vin_2a_4a.gif
VIN=12 V VOUT=12 V Load 2A to 4A
Figure 17. Load Step (Buck-Boost)
LM5175-Q1 hiccup_mode.gif
VIN=24 V VOUT=12 V Hiccup Enabled
Figure 19. Hiccup Mode Current Limit
LM5175-Q1 D008_SNVA37.gif
VOUT =12 V Fsw=300 kHz L1=4.7 μH
Figure 2. Efficiency vs Load
LM5175-Q1 D002_SNVSA37.gif
Figure 4. VCC vs VIN
LM5175-Q1 D007_snva37.gif
Figure 6. IIN Operating vs VIN
LM5175-Q1 D013_SNVA37.gif
Figure 8. ENABLE/UVLO Rising Threshold vs Temperature
LM5175-Q1 D011_SNVA37.gif
Figure 10. Boost Current Limit vs Temperature
LM5175-Q1 fccm_buck.gif
VOUT=12 V VIN=24 V
Figure 12. Forced CCM Operation (Buck)
LM5175-Q1 fccm_buckboost.gif
VOUT=12 V VIN=12 V
Figure 14. Forced CCM Operation (Buck-Boost)
LM5175-Q1 loadtr6vin_2a_4a.gif
VIN=6 V VOUT=12 V Load 2A to 4A
Figure 16. Load Step (Boost)
LM5175-Q1 linetr8v_24v_1a.gif
VIN=8 V to 24 V VOUT=12 V IOUT=1A
Figure 18. Line Transient