SNVSCR9A October   2024  – December 2024 LM61480T-Q1 , LM61495T-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Output Voltage Selection
      2. 7.3.2  Enable EN Pin and Use as VIN UVLO
      3. 7.3.3  SYNC/MODE Uses for Synchronization
      4. 7.3.4  Clock Locking
      5. 7.3.5  Adjustable Switching Frequency
      6. 7.3.6  RESET Output Operation
      7. 7.3.7  Internal LDO, VCC UVLO, and BIAS Input
      8. 7.3.8  Bootstrap Voltage and VCBOOT-UVLO (CBOOT Pin)
      9. 7.3.9  Adjustable SW Node Slew Rate
      10. 7.3.10 Spread Spectrum
      11. 7.3.11 Soft Start and Recovery From Dropout
      12. 7.3.12 Overcurrent and Short-Circuit Protection
      13. 7.3.13 Hiccup
      14. 7.3.14 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown Mode
      2. 7.4.2 Standby Mode
      3. 7.4.3 Active Mode
        1. 7.4.3.1 Peak Current Mode Operation
        2. 7.4.3.2 Auto Mode Operation
          1. 7.4.3.2.1 Diode Emulation
        3. 7.4.3.3 FPWM Mode Operation
        4. 7.4.3.4 Minimum On-time (High Input Voltage) Operation
        5. 7.4.3.5 Dropout
        6. 7.4.3.6 Recovery from Dropout
        7. 7.4.3.7 Other Fault Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Choosing the Switching Frequency
        2. 8.2.2.2  Setting the Output Voltage
        3. 8.2.2.3  Inductor Selection
        4. 8.2.2.4  Output Capacitor Selection
        5. 8.2.2.5  Input Capacitor Selection
        6. 8.2.2.6  BOOT Capacitor
        7. 8.2.2.7  BOOT Resistor
        8. 8.2.2.8  VCC
        9. 8.2.2.9  CFF and RFF Selection
        10. 8.2.2.10 RSPSP Selection
        11. 8.2.2.11 RT Selection
        12. 8.2.2.12 RMODE Selection
        13. 8.2.2.13 External UVLO
        14. 8.2.2.14 Maximum Ambient Temperature
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Ground and Thermal Considerations
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Third-Party Products Disclaimer
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Glossary
    7. 9.7 Electrostatic Discharge Caution
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.3.8 Bootstrap Voltage and VCBOOT-UVLO (CBOOT Pin)

The driver of the high-side power switch (HS switch) requires bias higher than VIN when the HS switch is ON. The capacitor connected between CBOOT and SW works as a charge pump to boost voltage on the CBOOT terminal to (SW + VCC). The boot diode is integrated on the LM614xxT-Q1 die to minimize the physical design size. TI recommends a 100nF capacitor rated for 10V with X7R or better dielectric for the CBOOT capacitor. The boot (CBOOT) rail has a UVLO to protect the chip from operation with too little bias. This UVLO has a threshold of VBOOT_UVLO and is typically 2.1V. If the CBOOT capacitor voltage drops below VBOOT_UVLO, then the device initiates a charging sequence using the low-side FET before attempting to turn on the high-side device.