JAJSLG4 december   2022 LM7480

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Revision History
  6. 5 Device Comparison Table
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  9. 8 Parameter Measurement Information
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Charge Pump
      2. 9.3.2 Dual Gate Control (DGATE, HGATE)
        1. 9.3.2.1 Reverse Battery Protection (A, C, DGATE)
        2. 9.3.2.2 Load Disconnect Switch Control (HGATE, OUT)
      3. 9.3.3 Overvoltage Protection and Battery Voltage Sensing (VSNS, SW, OV)
      4. 9.3.4 Low Iq Shutdown and Under Voltage Lockout (EN/UVLO)
    4. 9.4 Device Functional Modes
    5. 9.5 Application Examples
      1. 9.5.1 Redundant Supply OR-ing with Inrush Current Limiting, Overvoltage Protection and ON/OFF Control
      2. 9.5.2 Ideal Diode With Unsuppressed Load Dump Protection
  11. 10Applications and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical 12-V Reverse Battery Protection Application
      1. 10.2.1 Design Requirements for 12-V Battery Protection
      2. 10.2.2 Automotive Reverse Battery Protection
      3. 10.2.3 Detailed Design Procedure
        1. 10.2.3.1 Design Considerations
        2. 10.2.3.2 Charge Pump Capacitance VCAP
        3. 10.2.3.3 Input and Output Capacitance
        4. 10.2.3.4 Hold-Up Capacitance
        5. 10.2.3.5 Overvoltage Protection and Battery Monitor
      4. 10.2.4 MOSFET Selection: Blocking MOSFET Q1
      5. 10.2.5 MOSFET Selection: Hot-Swap MOSFET Q2
      6. 10.2.6 TVS Selection
      7. 10.2.7 Application Curves
    3. 10.3 200-V Unsuppressed Load Dump Protection Application
      1. 10.3.1 Design Requirements for 200-V Unsuppressed Load Dump Protection
      2. 10.3.2 Design Procedure
        1. 10.3.2.1 Boost Converter Components (C2, C3, L1)
        2. 10.3.2.2 Input and Output Capacitance
        3. 10.3.2.3 VS Capacitance, Resistor, and Zener Clamp
        4. 10.3.2.4 Overvoltage Protection and Output Clamp
        5. 10.3.2.5 MOSFET Q1 Selection
        6. 10.3.2.6 Input TVS Selection
        7. 10.3.2.7 MOSFET Q2 Selection
      3. 10.3.3 Application Curves
    4. 10.4 Do's and Don'ts
    5. 10.5 Power Supply Recommendations
      1. 10.5.1 Transient Protection
      2. 10.5.2 TVS Selection for 12-V Battery Systems
      3. 10.5.3 TVS Selection for 24-V Battery Systems
    6. 10.6 Layout
      1. 10.6.1 Layout Guidelines
      2. 10.6.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 ドキュメントの更新通知を受け取る方法
    2. 11.2 サポート・リソース
    3. 11.3 Trademarks
    4. 11.4 静電気放電に関する注意事項
    5. 11.5 用語集
  13. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

10.2.4 MOSFET Selection: Blocking MOSFET Q1

For selecting the blocking MOSFET Q1, important electrical parameters are the maximum continuous drain current ID, the maximum drain-to-source voltage VDS(MAX), the maximum drain-to-source voltage VGS(MAX), the maximum source current through body diode and the drain-to-source ON resistance RDSON.

The maximum continuous drain current, ID, rating must exceed the maximum continuous load current.

The maximum drain-to-source voltage, VDS(MAX), must be high enough to withstand the highest differential voltage seen in the application. This would include all the automotive transient events and any anticipated fault conditions. It is recommended to use MOSFETs with VDS voltage rating of 60 V along with a single bidirectional TVS or a VDS rating 40-V maximum rating along with two unidirectional TVS connected back-back at the input.

The maximum VGS LM7480 can drive is 14 V, so a MOSFET with 15-V minimum VGS rating should be selected. If a MOSFET with < 15-V VGS rating is selected, a zener diode can be used to clamp VGS to safe level, but this would result in increased IQ current.

To reduce the MOSFET conduction losses, lowest possible RDS(ON) is preferred, but selecting a MOSFET based on low RDS(ON) may not be beneficial always. Higher RDS(ON) will provide increased voltage information to LM7480's reverse comparator at a lower reverse current. Reverse current detection is better with increased RDS(ON). Choosing a MOSFET with < 50-mV forward voltage drop at maximum current is a good starting point.

For active rectification of AC super imposed ripple on the battery supply voltage, gate-source charge QGS of Q1 must be selected to meet the required AC ripple frequency. Maximum gate-source charge QGS (at 4.5-V VGS) for active rectification every cycle is

Equation 6. GUID-6F8D049B-7064-4999-AF09-EB3D0F9A42C5-low.gif

Where 1.3 mA is minimum charge pump current at 7-V VDGATE-VA, FAC_RIPPLE is frequency of the AC ripple superimposed on the battery and QGS_MAX is the QGS value specified in manufacturer datasheet at 6-V VGS. For active rectification at FAC_RIPPLE = 30 KHz, QGS_MAX = 43 nC.

Based on the design requirements, BUK7Y4R8-60E MOSFET is selected and its ratings are:

  • 60-V VDS(MAX) and ±20-V VGS(MAX)
  • RDS(ON) 5.0-mΩ typical at 5-V VGS and 2.9-mΩ rated at 10-V VGS
  • MOSFET QGS 17.4 nC

Thermal resistance of the MOSFET should be considered against the expected maximum power dissipation in the MOSFET to ensure that the junction temperature (TJ) is well controlled.