JAJSLG5 december   2022 LM7481

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Charge Pump
      2. 8.3.2 Dual Gate Control (DGATE, HGATE)
        1. 8.3.2.1 Reverse Battery Protection (A, C, DGATE)
        2. 8.3.2.2 Load Disconnect Switch Control (HGATE, OUT)
      3. 8.3.3 Overvoltage Protection and Battery Voltage sensing (VSNS, SW, OV)
      4. 8.3.4 Low Iq Shutdown and Undervoltage Lockout (EN/UVLO)
    4. 8.4 Device Functional Modes
    5. 8.5 Application Examples
      1. 8.5.1 Redundant Supply OR-ing With Inrush Current Limiting, Overvoltage Protection and ON/OFF Control
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical 12-V Reverse Battery Protection Application
      1. 9.2.1 Design Requirements for 12-V Battery Protection
      2. 9.2.2 Automotive Reverse Battery Protection
      3. 9.2.3 Detailed Design Procedure
        1. 9.2.3.1 Design Considerations
        2. 9.2.3.2 Charge Pump Capacitance VCAP
        3. 9.2.3.3 Input and Output Capacitance
        4. 9.2.3.4 Hold-up Capacitance
        5. 9.2.3.5 Overvoltage Protection and Battery Monitor
      4. 9.2.4 MOSFET Selection: Blocking MOSFET Q1
      5. 9.2.5 MOSFET Selection: Hot-Swap MOSFET Q2
      6. 9.2.6 TVS selection
      7. 9.2.7 Application Curves
    3. 9.3 Do's and Don'ts
    4. 9.4 Power Supply Recommendations
      1. 9.4.1 Transient Protection
      2. 9.4.2 TVS Selection for 12-V Battery Systems
      3. 9.4.3 TVS Selection for 24-V Battery Systems
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 ドキュメントの更新通知を受け取る方法
    2. 10.2 サポート・リソース
    3. 10.3 Trademarks
    4. 10.4 静電気放電に関する注意事項
    5. 10.5 用語集
  12. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

9.5.1 Layout Guidelines

  • For the ideal diode stage, connect A, DGATE and C pins of LM7481 close to the MOSFET's SOURCE, GATE and DRAIN pins.

  • For the load disconnect stage, connect HGATE and OUT pins of LM7481 close to the MOSFET's GATE and SOURCE pins.

  • The high current path of for this solution is through the MOSFET, therefore it is important to use thick and short traces for source and drain of the MOSFET to minimize resistive losses.

  • The DGATE pin of the LM7481 must be connected to the MOSFET GATE with short trace.

  • Place transient suppression components close to LM7481.

  • Place the decopuling capacitor, CVS close to VS pin and chip GND.

  • The charge pump capacitor across CAP and VS pins must be kept away from the MOSFET to lower the thermal effects on the capacitance value.
  • Obtaining acceptable performance with alternate layout schemes is possible, however the layout shown in the Layout Example is intended as a guideline and to produce good results.