SNOSDH5 November   2024 LMG2640

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 GaN Power FET Switching Parameters
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  GaN Power FET Switching Capability
      2. 7.3.2  Current-Sense Emulation
      3. 7.3.3  Bootstrap Diode Function
      4. 7.3.4  Input Control Pins (EN, INL, INH)
      5. 7.3.5  INL - INH Interlock
      6. 7.3.6  AUX Supply Pin
        1. 7.3.6.1 AUX Power-On Reset
        2. 7.3.6.2 AUX Under-Voltage Lockout (UVLO)
      7. 7.3.7  BST Supply Pin
        1. 7.3.7.1 BST Power-On Reset
        2. 7.3.7.2 BST Under-Voltage Lockout (UVLO)
      8. 7.3.8  Over-Current Protection
      9. 7.3.9  Over-Temperature Protection
      10. 7.3.10 Fault Reporting
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Solder-Joint Stress Relief
        2. 8.4.1.2 Signal-Ground Connection
        3. 8.4.1.3 CS Pin Signal
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

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メカニカル・データ（パッケージ｜ピン）
  • RRG|40
サーマルパッド・メカニカル・データ
発注情報

7.3.8 Over-Current Protection

The LMG2640 implements cycle-by-cycle over-current protection for both half-bridge GaN power FETs. Figure 7-5 shows the cycle-by-cycle over-current operation. Every INx logic-high cycle turns on the GaN power FET. If the GaN power FET drain current exceeds the over-current threshold current, the over-current protection turns off the GaN power FET for the remainder of the INx logic-high duration.


LMG2640 Cycle-by-Cycle Over-Current Protection Operation

Figure 7-5 Cycle-by-Cycle Over-Current Protection Operation

An over-current protection event is not reported on the FLT pin. Cycle-by-cycle over-current protection minimizes system disruption because the event is not reported and because the protection allows the GaN power FET to turn on every INx cycle.

The low-side / high-side over-current protection threshold currents are set to different levels corresponding to the different GaN power FET sizes. As described in Current-Sense Emulation, an artificial CS pin current is produced after the low-side GaN power FET is turned off by the low-side over-current protection, to prevent the controller from entering a hung state.