JAJSG06E April   2016  – October 2018 LMG3410R070 , LMG3411R070

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      ブロック概略図
      2.      100V/nsを超えるスイッチング性能
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 Switching Parameters
      1. 8.1.1 Turn-on Delays
      2. 8.1.2 Turn-off Delays
      3. 8.1.3 Drain Slew Rate
      4. 8.1.4 Turn-on and Turn-off Energy
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Direct-Drive GaN Architecture
      2. 9.3.2 Internal Buck-Boost DC-DC Converter
      3. 9.3.3 Internal Auxiliary LDO
      4. 9.3.4 Fault Detection
        1. 9.3.4.1 Over-current Protection
        2. 9.3.4.2 Over-Temperature Protection and UVLO
      5. 9.3.5 Drive Strength Adjustment
    4. 9.4 Device Functional Modes
      1. 9.4.1 Low-Power Mode
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Slew Rate Selection
          1. 10.2.2.1.1 Startup and Slew Rate with Bootstrap High-Side Supply
        2. 10.2.2.2 Signal Level-Shifting
        3. 10.2.2.3 Buck-Boost Converter Design
      3. 10.2.3 Application Curves
    3. 10.3 Paralleling GaN Devices
    4. 10.4 Do's and Don'ts
  11. 11Power Supply Recommendations
    1. 11.1 Using an Isolated Power Supply
    2. 11.2 Using a Bootstrap Diode
      1. 11.2.1 Diode Selection
      2. 11.2.2 Managing the Bootstrap Voltage
      3. 11.2.3 Reliable Bootstrap Start-up
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Power Loop Inductance
      2. 12.1.2 Signal Ground Connection
      3. 12.1.3 Bypass Capacitors
      4. 12.1.4 Switch-Node Capacitance
      5. 12.1.5 Signal Integrity
      6. 12.1.6 High-Voltage Spacing
      7. 12.1.7 Thermal Recommendations
    2. 12.2 Layout Example
  13. 13デバイスおよびドキュメントのサポート
    1. 13.1 デバイス・サポート
      1. 13.1.1 デベロッパー・ネットワークの製品に関する免責事項
    2. 13.2 ドキュメントのサポート
      1. 13.2.1 関連資料
    3. 13.3 ドキュメントの更新通知を受け取る方法
    4. 13.4 コミュニティ・リソース
    5. 13.5 商標
    6. 13.6 静電気放電に関する注意事項
    7. 13.7 Glossary
  14. 14メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

12.1.6 High-Voltage Spacing

Circuits using the LMG341xR070 involve high voltage, potentially up to 600V. When laying out circuits using the LMG341xR070, understand the creepage and clearance requirements in your application and how they apply to the power stage. Functional (or working) isolation is required between the source and drain of each transistor, and between the high-voltage power supply and ground. Functional isolation or perhaps stronger isolation (such as reinforced isolation) may be required between the input circuitry to the LMG341xR070 and the power controller. Choose signal isolators and PCB spacing (creepage and clearance) distances which meet your isolation requirements.

If a heatsink is used to manage thermal dissipation of the LMG341xR070, ensure necessary electrical isolation and mechanical spacing is maintained between the heatsink and the PCB.