JAJSK05D September   2020  – March 2022 LMG3422R030 , LMG3425R030

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 Switching Parameters
      1. 8.1.1 Turn-On Times
      2. 8.1.2 Turn-Off Times
      3. 8.1.3 Drain-Source Turn-On Slew Rate
      4. 8.1.4 Turn-On and Turn-Off Switching Energy
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  GaN FET Operation Definitions
      2. 9.3.2  Direct-Drive GaN Architecture
      3. 9.3.3  Drain-Source Voltage Capability
      4. 9.3.4  Internal Buck-Boost DC-DC Converter
      5. 9.3.5  VDD Bias Supply
      6. 9.3.6  Auxiliary LDO
      7. 9.3.7  Fault Detection
        1. 9.3.7.1 Overcurrent Protection and Short-Circuit Protection
        2. 9.3.7.2 Overtemperature Shutdown
        3. 9.3.7.3 UVLO Protection
        4. 9.3.7.4 Fault Reporting
      8. 9.3.8  Drive Strength Adjustment
      9. 9.3.9  Temperature-Sensing Output
      10. 9.3.10 Ideal-Diode Mode Operation
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Slew Rate Selection
          1. 10.2.2.1.1 Start-Up and Slew Rate With Bootstrap High-Side Supply
        2. 10.2.2.2 Signal Level-Shifting
        3. 10.2.2.3 Buck-Boost Converter Design
      3. 10.2.3 Application Curves
    3. 10.3 Do's and Don'ts
  11. 11Power Supply Recommendations
    1. 11.1 Using an Isolated Power Supply
    2. 11.2 Using a Bootstrap Diode
      1. 11.2.1 Diode Selection
      2. 11.2.2 Managing the Bootstrap Voltage
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Solder-Joint Reliability
      2. 12.1.2 Power-Loop Inductance
      3. 12.1.3 Signal-Ground Connection
      4. 12.1.4 Bypass Capacitors
      5. 12.1.5 Switch-Node Capacitance
      6. 12.1.6 Signal Integrity
      7. 12.1.7 High-Voltage Spacing
      8. 12.1.8 Thermal Recommendations
    2. 12.2 Layout Examples
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 サポート・リソース
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Export Control Notice
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • RQZ|54
サーマルパッド・メカニカル・データ
発注情報

6 Pin Configuration and Functions

Figure 6-1 RQZ Package54-Pin VQFN(Top View)
Table 6-1 Pin Functions
PIN TYPE(1) DESCRIPTION
NAME NO.
NC1 1, 16 — Used to anchor QFN package to PCB. Pins must be soldered to PCB landing pads. The PCB landing pads are non-solder mask defined pads and must not be physically connected to any other metal on the PCB. Internally connected to DRAIN.
DRAIN 2-15 P GaN FET drain. Internally connected to NC1.
NC2 17, 54 — Used to anchor QFN package to PCB. Pins must be soldered to PCB landing pads. The PCB landing pads are non-solder mask defined pads and must not be physically connected to any other metal on the PCB. Internally connected to SOURCE, GND, and THERMAL PAD.
SOURCE 18-40 P GaN FET source. Internally connected to GND, NC2, and THERMAL PAD.
VNEG 41-42 P Internal buck-boost converter negative output. Used as the negative supply to turn off the depletion mode GaN FET. Bypass to ground with a 2.2-µF capacitor.
BBSW 43 P Internal buck-boost converter switch pin. Connect an inductor from this point to ground.
GND 44, 45, 49 G Signal ground. Internally connected to SOURCE, NC2, and THERMAL PAD.
VDD 46 P Device input supply.
IN 47 I CMOS-compatible non-inverting input used to turn the FET on and off.
FAULT 48 O Push-pull digital output that asserts low during a fault condition. Refer to Fault Detection for details.
OC 50 O Push-pull digital output that asserts low during overcurrent and short-circuit fault conditions. Refer to Fault Detection for details.
TEMP 51 O Push-pull digital output that gives information about the GaN FET temperature. Outputs a fixed 9-kHz pulsed waveform. The device temperature is encoded as the duty cycle of the waveform.
RDRV 52 I Drive strength selection pin. Connect a resistor from this pin to ground to set the turn-on drive strength to control slew rate. Tie the pin to GND to enable 150 V/ns and tie the pin to LDO5V to enable 100 V/ns.
LDO5V 53 P 5-V LDO output for external digital isolator
THERMAL PAD — — Thermal pad. Internally connected to SOURCE, GND, and NC2. The thermal pad can be used to conduct rated device current.
(1) I = input, O = output, P = power, G = ground