JAJSK05D September   2020  – March 2022 LMG3422R030 , LMG3425R030

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 Switching Parameters
      1. 8.1.1 Turn-On Times
      2. 8.1.2 Turn-Off Times
      3. 8.1.3 Drain-Source Turn-On Slew Rate
      4. 8.1.4 Turn-On and Turn-Off Switching Energy
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  GaN FET Operation Definitions
      2. 9.3.2  Direct-Drive GaN Architecture
      3. 9.3.3  Drain-Source Voltage Capability
      4. 9.3.4  Internal Buck-Boost DC-DC Converter
      5. 9.3.5  VDD Bias Supply
      6. 9.3.6  Auxiliary LDO
      7. 9.3.7  Fault Detection
        1. 9.3.7.1 Overcurrent Protection and Short-Circuit Protection
        2. 9.3.7.2 Overtemperature Shutdown
        3. 9.3.7.3 UVLO Protection
        4. 9.3.7.4 Fault Reporting
      8. 9.3.8  Drive Strength Adjustment
      9. 9.3.9  Temperature-Sensing Output
      10. 9.3.10 Ideal-Diode Mode Operation
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Slew Rate Selection
          1. 10.2.2.1.1 Start-Up and Slew Rate With Bootstrap High-Side Supply
        2. 10.2.2.2 Signal Level-Shifting
        3. 10.2.2.3 Buck-Boost Converter Design
      3. 10.2.3 Application Curves
    3. 10.3 Do's and Don'ts
  11. 11Power Supply Recommendations
    1. 11.1 Using an Isolated Power Supply
    2. 11.2 Using a Bootstrap Diode
      1. 11.2.1 Diode Selection
      2. 11.2.2 Managing the Bootstrap Voltage
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Solder-Joint Reliability
      2. 12.1.2 Power-Loop Inductance
      3. 12.1.3 Signal-Ground Connection
      4. 12.1.4 Bypass Capacitors
      5. 12.1.5 Switch-Node Capacitance
      6. 12.1.6 Signal Integrity
      7. 12.1.7 High-Voltage Spacing
      8. 12.1.8 Thermal Recommendations
    2. 12.2 Layout Examples
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 サポート・リソース
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Export Control Notice
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • RQZ|54
サーマルパッド・メカニカル・データ
発注情報

12.1.8 Thermal Recommendations

The LMG342xR030 is a lateral device grown on a Si substrate. The thermal pad is connected to the source of device. The LMG342xR030 can be used in applications with significant power dissipation, for example, hard-switched power converters. In these converters, cooling using just the PCB can not be sufficient to keep the part at a reasonable temperature. To improve the thermal dissipation of the part, TI recommends a heat sink is connected to the back of the PCB to extract additional heat. Using power planes and numerous thermal vias, the heat dissipated in the LMG342xR030 can be spread out in the PCB and effectively passed to the other side of the PCB. A heat sink can be applied to bare areas on the back of the PCB using an thermal interface material (TIM). The solder mask from the back of the board underneath the heat sink can be removed for more effective heat removal.

Refer to the High Voltage Half Bridge Design Guide for LMG3410 Smart GaN FET application note for more recommendations and performance data on thermal layouts.