JAJSK05D September 2020 – March 2022 LMG3422R030 , LMG3425R030
PRODUCTION DATA
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SWITCHING TIMES | ||||||
td(on)(Idrain) | Drain-current turn-on delay time | From VIN > VIN,IT+ to ID > 1 A, VBUS = 400 V, LHB current = 10 A, see Figure 8-1 and Figure 8-2 | 28 | 42 | ns | |
td(on) | Turn-on delay time | From VIN > VIN,IT+ to VDS < 320 V, VBUS = 400 V, LHB current = 10 A, see Figure 8-1 and Figure 8-2 | 32 | 52 | ns | |
tr(on) | Turn-on rise time | From VDS < 320 V to VDS < 80 V, VBUS = 400 V, LHB current = 10 A, see Figure 8-1 and Figure 8-2 | 2.5 | 4 | ns | |
td(off) | Turn-off delay time | From VIN < VIN,IT– to VDS > 80 V, VBUS = 400 V, LHB current = 10 A, see Figure 8-1 and Figure 8-2 | 44 | 65 | ns | |
tf(off) | Turn-off fall time(1) | From VDS > 80 V to VDS > 320 V, VBUS = 400 V, LHB current = 10 A, see Figure 8-1 and Figure 8-2 | 21 | ns | ||
Minimum IN high pulse-width for FET turn-on | VIN rise/fall times < 1 ns, VDS falls to < 200 V, VBUS = 400 V, LHB current = 10 A, see Figure 8-1 | 24 | ns | |||
STARTUP TIMES | ||||||
Driver start-up time | From VVDD > VVDD,T+(UVLO) to FAULT high, CLDO5V = 100 nF, CVNEG = 2.2 µF at 0-V bias linearly decreasing to 1.5 µF at 15-V bias | 310 | 470 | us | ||
FAULT TIMES | ||||||
toff(OC) | Overcurrent fault FET turn-off time, FET on before overcurrent | VIN = 5 V, From ID > IT(OC) to ID < 50 A, ID di/dt = 100 A/µs | 110 | 145 | ns | |
toff(SC) | Short-circuit current fault FET turn-off time, FET on before short circuit | VIN = 5 V, From ID > IT(SC) to ID < 50 A, ID di/dt = 700 A/µs | 65 | 100 | ns | |
Overcurrent fault FET turn-off time, FET turning on into overcurrent | From ID > IT(OC) to ID < 50 A | 200 | 250 | ns | ||
Short-circuit fault FET turn-off time, FET turning on into short circuit | From ID > IT(SC) to ID < 50 A | 80 | 180 | ns | ||
IN reset time to clear FAULT latch | From VIN < VIN,IT– to FAULT high | 250 | 380 | 580 | us | |
IDEAL-DIODE MODE CONTROL TIMES | ||||||
Ideal-diode mode FET turn-on time | VDS < VT(3rd) to FET turn-on, VDS being discharged by half-bridge configuration inductor at 5 A | 50 | 65 | ns | ||
Ideal-diode mode FET turn-off time | ID > IT(ZC) to FET turn-off, ID di/dt = 100 A/µs created with a half-bridge configuration | 50 | 76 | ns | ||
Overtemperature-shutdown ideal-diode mode IN falling blanking time | 150 | 230 | 360 | ns |