JAJSRA3A September   2023  – November 2023 LMG3626

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 GaN Power FET Switching Parameters
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 GaN Power FET Switching Capability
      2. 7.3.2 Turn-On Slew-Rate Control
      3. 7.3.3 Current-Sense Emulation
      4. 7.3.4 Input Control Pins (EN, IN)
      5. 7.3.5 AUX Supply Pin
        1. 7.3.5.1 AUX Power-On Reset
        2. 7.3.5.2 AUX Under-Voltage Lockout (UVLO)
      6. 7.3.6 Overcurrent Protection
      7. 7.3.7 Overtemperature Protection
      8. 7.3.8 Fault Reporting
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Turn-On Slew-Rate Design
        2. 8.2.2.2 Current-Sense Design
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Solder-Joint Stress Relief
        2. 8.4.1.2 Signal-Ground Connection
        3. 8.4.1.3 CS Pin Signal
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 ドキュメントの更新通知を受け取る方法
    3. 9.3 サポート・リソース
    4. 9.4 Trademarks
    5. 9.5 静電気放電に関する注意事項
    6. 9.6 用語集
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.3.4 Input Control Pins (EN, IN)

The EN pin is used to toggle the device between the active and standby modes described in the Device Functional Modes section.

The IN pin is used to turn the GaN power FET on and off.

The input control pins have a typical 1-V input-voltage-threshold hysteresis for noise immunity. The pins also have a typical 400-kΩ pull-down resistance to protect against floating inputs. The 400 kΩ saturates for nominal input voltages above 4 V to limit the maximum input pull-down current to a typical 10 µA.

The IN turn-on action is blocked by the following conditions:

  • Standby mode (as set by the EN pin above)
  • AUX UVLO
  • Overcurrent protection
  • Overtemperature protection

The standby mode, AUX UVLO, and overtemperature protection are independent of the IN logic state. Figure 7-3 shows the IN independent blocking condition operation.

Meanwhile, overcurrent protection only acts after IN has turned on the GaN power FET. See the Overcurrent Protection section for the details.


GUID-20230817-SS0I-NRMT-DZDF-Z3GLPXKKJ5JB-low.svg

Figure 7-3 IN Independent Blocking Condition Operation