SNOSDL1 December   2024 LMG3650R035

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Switching Parameters
      1. 7.1.1 Turn-On Times
      2. 7.1.2 Turn-Off Times
      3. 7.1.3 Drain-Source Turn-On and Turn-off Slew Rate
      4. 7.1.4 Zero-Voltage Detection Times (LMG3656R035 only)
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
      1. 8.2.1 LMG3650R035 Functional Block Diagram
      2. 8.2.2 LMG3651R035 Functional Block Diagram
      3. 8.2.3 LMG3656R035 Functional Block Diagram
      4. 8.2.4 LMG3657R035 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Drive Strength Adjustment
      2. 8.3.2 VDD Supply
      3. 8.3.3 Overcurrent and Short-Circuit Protection
      4. 8.3.4 Overtemperature Protection
      5. 8.3.5 UVLO Protection
      6. 8.3.6 Fault Reporting
      7. 8.3.7 Auxiliary LDO (LMG3651R035 Only)
      8. 8.3.8 Zero-Voltage Detection (ZVD) (LMG3656R035 Only)
      9. 8.3.9 Zero-Current Detection (ZCD) (LMG3657R035 Only)
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Slew Rate Selection
        2. 9.2.2.2 Signal Level-Shifting
    3. 9.3 Power Supply Recommendations
      1. 9.3.1 Using an Isolated Power Supply
      2. 9.3.2 Using a Bootstrap Diode
        1. 9.3.2.1 Diode Selection
        2. 9.3.2.2 Managing the Bootstrap Voltage
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Tape and Reel Information

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発注情報

6.5 Electrical Characteristics

Unless otherwise noted: voltage, resistance, capacitance, and inductance are respect to GND/SRC; –40℃ ≤ TJ ≤ 150℃; VDD = 12V; FLT/RDRV resistances R1 & R2 are open
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
GAN POWER FET
RDS(on) Drain-source on resistance TJ = 25°C, IL = 16A 35 55 mΩ
TJ = 150°C, IL = 16A 80 mΩ
VSD Source-drain third-quadrant voltage TJ = 25°C, ISD = 0.1A 1.8 V
TJ = 150°C, ISD = 0.1A 1.8 V
TJ = 25°C, ISD = 20A 2.9 V
TJ = 150°C, ISD = 20A 3 V
IDSS Drain leakage current TJ = 25°C, VDS = 650V TBD µA
TJ = 150°C, VDS = 650V TBD µA
QOSS Output charge VDS = 400V 125 nC
COSS Output capacitance VDS = 400V 173 pF
EOSS Output capacitance stored energy VDS = 400V 15 µJ
COSS(tr) Time related effective output capacitance VDS = 400V 255 pF
COSS(er) Energy related effective output capacitance VDS = 400V 200 pF
QRR Reverse recovery charge 0 nC
OVERCURRENT AND SHORT-CIRCUIT PROTECTIONS
IT(OC) Overcurrent protection threshold 26 29 32 A
VT(Idsat) Saturation current detection - threshold voltage 8.7 9 9.6 V
OVERTEMPERATURE PROTECTION
TT+ Temperature fault - positive-going threshold temperature 190 °C
TT- Temperature fault - negative-going threshold temperature 175 °C
TT(hyst) Temperature fault - threshold temperature hysterisis 20 °C
IN
VIN,IT+ Positive-going input threshold voltage 1.7 2 2.45 V
VIN,IT- Negative-going input threshold voltage 0.7 1 1.3 V
VIN,IT(hyst) Input threshold voltage hysteresis 1 V
RPDN Pull-down input resistance 115 150 185 kΩ
FLT/RDRV
VOL Low-level output voltage Output sink 8mA 0.2 0.4 V
VOH High-level output voltage Output source 8mA 4.6 4.8 V
VDD
IVDD(ON) Quiescent current when FET is ON IN=1 1.9 11.5 mA
IVDD(OFF) Quiescent current when FET is OFF IN=0 0.7 1.1 mA
IVDD(op) Operating current at 140 kHz fsw = 140kHz, Vbus = 400V, Hard-switched, 50% duty cycle. 3.5 6.5 mA
VVDD, T+ (UVLO) UVLO- positive-going threshold voltage 8.1 8.5 8.9 V
VVDD, T- (UVLO) UVLO- negative-going threshold voltage 7.6 8 8.4 V
VVDD, T (hyst) UVLO- threshold voltage hystresis 0.5 V