SNCS104D April   2005  – December 2014 LMH6570

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics ±5V
    6. 6.6 Electrical Characteristics ±3.3V
    7. 6.7 Typical Performance Characteristics
  7. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Video Performance
      2. 7.2.2 Feedback Resistor Selection
      3. 7.2.3 Multiplexer Expansion
      4. 7.2.4 Other Applications
      5. 7.2.5 Driving Capacitive Loads
      6. 7.2.6 ESD Protection
  8. 8 Power Supply Recommendations
    1. 8.1 Power Dissipation
  9. 9 Layout
    1. 9.1 Layout Guidelines
  10. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Trademarks
    3. 10.3 Electrostatic Discharge Caution
    4. 10.4 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings(1)(1)

MIN MAX UNIT
Supply Voltage (V+ − V−) 13.2 V
IOUT(3) 130 mA
Signal & Logic Input Pin Voltage ±(VS + 0.6) V
Signal & Logic Input Pin Current ±20 mA
Maximum Junction Temperature +150 °C
Storage Temperature −65 +150 °C
Soldering Information Infrared or Convection (20 sec) 235 °C
Wave Soldering (10 sec) 260 °C
(1) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Machine model (MM)(2) ±200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions. Pins listed as ±2000 V may actually have higher performance. Human body model, 1.5kΩ in series with 100 pF.
(2) Machine model, 0 Ω In series with 200 pF

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Operating Temperature −40 85 °C
Supply Voltage 6 12 V

6.4 Thermal Information

THERMAL METRIC(1) D UNIT
8 PINS
RθJA Junction-to-ambient thermal resistance 150 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 50
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics ±5V

VS = ±5 V, RL = 100 Ω, RF = 576 Ω, AV = 2 V/V, TJ = 25 °C, unless otherwise specified.
PARAMETER TEST CONDITIONS(2) MIN(4) TYP(8) MAX(4) UNIT
FREQUENCY DOMAIN PERFORMANCE
SSBW −3 dB Bandwidth VOUT = 0.5 VPP 500 MHz
LSBW –3 dB Bandwidth VOUT = 2 VPP(5) 400 MHz
.1 dBBW 0.1 dB Bandwidth VOUT = 0.25 VPP 150 MHz
DG Differential gain RL = 150 Ω, f = 4.43 MHz 0.02%
DP Differential phase RL = 150 Ω, f = 4.43 MHz 0.05 deg
XTLK Channel to channel crosstalk All Hostile, f = 5 MHz −70 dBc
TIME DOMAIN RESPONSE
TRS Channel to channel switching time Logic transition to 90% output 8 ns
Enable and disable times Logic transition to 90% or 10% output. 10 ns
TRL Rise and fall time 4 V Step 2.4 ns
TSS Settling time to 0.05% 2 V Step 17 ns
OS Overshoot 2 V Step 5%
SR Slew rate 4 V Step(5)(7) 2200 V/μs
DISTORTION
HD2 2nd Harmonic distortion 2 VPP , 5 MHz −68 dBc
HD3 3rd Harmonic distortion 2 VPP , 5 MHz −84 dBc
IMD 3rd Order intermodulation products 10 MHz, Two tones 2 Vpp at output −80 dBc
EQUIVALENT INPUT NOISE
VN Voltage >1 MHz, Input Referred 5 nV√HZ
ICN Current >1 MHz, Input Referred 5 pA/√Hz
STATIC, DC PERFORMANCE
CHGM Channel to channel gain difference DC, Difference in gain between channels ±0.005% ±0.034%
-40°C ≤ TJ ≤ 85°C ±0.036%
VIO Input offset voltage VIN = 0 V 1 ±15 mV
-40°C ≤ TJ ≤ 85°C ±21
DVIO Offset voltage drift(9) 30 µV/°C
IBN Input bias current(6) VIN = 0 V −3 ±8 µA
-40°C ≤ TJ ≤ 85°C ±10
DIBN Bias current drift(9) 11 nA/°C
IBI Inverting input bias current(6) Pin 8, Feedback point,
VIN = 0 V		 −3 ±18 uA
-40°C ≤ TJ ≤ 85°C ±22
PSRR Power supply rejection ratio
 DC, Input referred 48 50 dB
-40°C ≤ TJ ≤ 85°C 46
ICC Supply current No Load, Shutdown Pin (SD) > 0.8 V 13.8 15 mA
-40°C ≤ TJ ≤ 85°C 16
Supply current shutdown Shutdown Pin (SD) > 2 V 1.1 1.3 mA
-40°C ≤ TJ ≤ 85°C 1.4
VIH Logic high threshold Select Pin & Shutdown pin (SEL, SD) 2.0 V
VIL Logic low threshold Select Pin & Shutdown pin (SEL, SD) 0.8 V
IiL Logic pin input current low(6) Logic Input = 0 V Select Pin & Shutdown Pin (SEL, SD) −8 −1 µA
-40°C ≤ TJ ≤ 85°C -10
IiH Logic pin input current high(6) Logic Input = 5.0 V, Select Pin & Shutdown Pin (SEL, SD) 57 68 µA
-40°C ≤ TJ ≤ 85°C 75
MISCELLANEOUS PERFORMANCE
RIN+ Input resistance 5 kΩ
CIN Input capacitance 0.8 pF
ROUT Output resistance Output Active, (SD < 0.8 V) 0.04 Ω
ROUT Output resistance Output Disabled, (SD > 2 V) 3000 Ω
COUT Output capacitance Output Disabled, (SD > 2 V) 3.1 pF
VO Output voltage range No Load ±3.51 ±3.7 V
-40°C ≤ TJ ≤ 85°C ±3.50
VOL RL = 100 Ω ±3.16 ±3.5 V
-40°C ≤ TJ ≤ 85°C ±3.15
CMIR Input voltage range ±2.5 ±2.6 V
IO Linear output current(6) VIN = 0 V +60 ±80 mA
-70
-40°C ≤ TJ ≤ 85°C ±55
ISC Short circuit current(3) VIN = ±2 V, Output shorted to ground ±230 mA

6.6 Electrical Characteristics ±3.3V

VS = ±3.3 V, RL = 100 Ω, RF = 576 Ω, AV = 2 V/V, unless otherwise specified.
PARAMETER TEST CONDITIONS(2) MIN(4) TYP(8) MAX(4) UNIT
FREQUENCY DOMAIN PERFORMANCE
SSBW −3 dB Bandwidth VOUT = 0.5 VPP 475 MHz
LSBW −3 dB Bandwidth VOUT = 2.0 VPP 375 MHz
0.1 dBBW 0.1 dB Bandwidth VOUT = 0.5 VPP 100 MHz
GFP Peaking DC to 200 MHz 0.4 dB
XTLK Channel to channel crosstalk All Hostile, f = 5 MHz −70 dBc
TIME DOMAIN RESPONSE
TRL Rise and Fall time 2 V Step 2 ns
TSS Settling time to 0.05% 2 V Step 20 ns
OS Overshoot 2 V Step 5%
SR Slew rate 2 V Step 1400 V/μs
DISTORTION
HD2 2nd Harmonic distortion 2 VPP, 10 MHz −67 dBc
HD3 3rd Harmonic distortion 2 VPP, 10 MHz −87 dBc
STATIC, DC PERFORMANCE
VIO Input offset voltage VIN = 0 V 1 mV
IBN Input bias current(6) VIN = 0 V -3 μA
PSRR Power supply rejection ratio DC, Input Referred 49 dB
ICC Supply current No Load 12.5 mA
VIH Logic high threshold Select Pin & Shutdown pin (SEL, SD),
VIH ≊ V+ * 0.4		 1.3 V
VIL Logic low threshold Select Pin & Shutdown pin (SEL, SD),
VIL ≊ V+ * 0.12		 0.4 V
MISCELLANEOUS PERFORMANCE
RIN+ Input resistance 5 kΩ
CIN Input capacitance 0.8 pF
ROUT Output resistance 0.06 Ω
VO Output voltage range No Load ±2 V
VOL RL = 100 Ω ±1.8 V
CMIR Input voltage range ±1.2 V
IO Linear output current(3) VIN = 0 V ±60 mA
ISC Short circuit current(3) VIN = ±1 V, Output shorted to ground ±150 mA
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For specifications, see the Electrical Characteristics tables.
(2) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under conditions of internal self heating where TJ > TA. See Thermal Information for information on temperature de-rating of this device. Min/Max ratings are based on product testing, characterization and simulation. Individual parameters are tested as noted.
(3) The maximum output current (IOUT) is determined by the device power dissipation limitations (The junction temperature cannot be allowed to exceed 150°C). See Power Dissipation for more details. A short circuit condition should be limited to 5 seconds or less.
(4) Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlation using Statistical Quality Control (SQC) methods.
(5) Parameter ensured by design.
(6) Positive Value is current into device.
(7) Slew Rate is the average of the rising and falling edges.
(8) Typical numbers are the most likely parametric norm.
(9) Drift determined by dividing the change in parameter at temperature extremes by the total temperature change.

6.7 Typical Performance Characteristics

Vs = ±5 V, RL = 100 Ω, AV = 2, RF = RG = 576 Ω, unless otherwise specified.
20129902.gif
Figure 1. Frequency Response vs. VOUT
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Figure 3. Frequency Response vs. Capacitive Load
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Figure 5. Suggested Value of RF vs. Gain
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Figure 7. Pulse Response 2VPP
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Figure 9. Closed Loop Output Impedance
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Figure 11. PSRR vs. Frequency
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Figure 13. SHUTDOWN Switching
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Figure 15. HD2 vs. Frequency
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Figure 17. HD2 vs. VS
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Figure 19. HD2 vs. VOUT
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Positive value is current into device
Figure 21. Minimum VOUT vs. IOUT
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Figure 23. Crosstalk vs. Frequency
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Figure 2. Frequency Response vs. Gain
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Figure 4. Suggested ROUT vs. Capacitive Load
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Figure 6. Pulse Response 4VPP
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Figure 8. Pulse Response 2VPP
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Figure 10. Closed Loop Output Impedance
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Figure 12. Channel Switching
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Figure 14. Shutdown Glitch
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Figure 16. HD3 vs. Frequency
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Figure 18. HD3 vs. VS
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Figure 20. HD3 vs. VOUT
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Positive value is current into device
Figure 22. Maximum VOUT vs. IOUT
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Figure 24. Off Isolation