SNOSA42G November   2002  – December 2014 LMH6624 , LMH6626

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics ±2.5 V
    6. 6.6 Electrical Characteristics ±6 V
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Feature Description
      1. 7.2.1 Bias Current Cancellation
      2. 7.2.2 Total Input Noise vs. Source Resistance
      3. 7.2.3 Noise Figure
      4. 7.2.4 Low Noise Integrator
      5. 7.2.5 High-gain Sallen-key Active Filters
      6. 7.2.6 Low Noise Magnetic Media Equalizer
    3. 7.3 Device Functional Modes
      1. 7.3.1 Single Supply Operation
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Related Links
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VIN Differential ±1.2 V
Supply voltage (V+ - V−) 13.2 V
Voltage at Input pins V+ +0.5,
V− −0.5		 V
Input Current ±10 mA
Soldering information    Infrared or convection (20 sec.) 235 °C
Wave soldering (10 sec.) 260 °C
Junction temperature(2) 150 °C
Storage temperature -65 150 °C

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Machine model(2) ±200
(1) Human body model, 1.5 kΩ in series with 100 pF. JEDEC document JEP155 states that 2000-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 2000-V HBM is possible with the necessary precautions. Pins listed as ±2000 V may actually have higher performance.
(2) Machine Model, 0 Ω in series with 200 pF. JEDEC document JEP157 states that 200-V MM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Operating temperature(2) −40 +125 °C
Operating supply voltage (V+ - V-) ±2.25 ±6.3 V

6.4 Thermal Information

THERMAL METRIC(1) LMH6624 LMH6626 UNIT
DBV D DGK D
5 PINS 8 PINS 8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance(2) 265 166 235 166 °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) The maximum power dissipation is a function of TJ(MAX), RθJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) - TA)/ RθJA . All numbers apply for packages soldered directly onto a PC board.

6.5 Electrical Characteristics ±2.5 V

Unless otherwise specified, all limits ensured at TA = 25°C, V+ = 2.5 V, V− = −2.5 V, VCM = 0 V, AV = +20, RF = 500 Ω,
RL = 100 Ω. See (9).
PARAMETER TEST CONDITIONS MIN(4) TYP(3) MAX(4) UNIT
DYNAMIC PERFORMANCE
fCL −3dB BW VO = 400 mVPP (LMH6624) 90 MHz
VO = 400 mVPP (LMH6626) 80
SR Slew rate(6) VO = 2 VPP, AV = +20 (LMH6624) 300 V/μs
VO = 2 VPP, AV = +20 (LMH6626) 290
VO = 2 VPP, AV = +10 (LMH6624) 360
VO = 2 VPP, AV = +10 (LMH6626) 340
tr Rise time VO = 400 mV Step, 10% to 90% 4.1 ns
tf Fall time VO = 400 mV Step, 10% to 90% 4.1 ns
ts Settling time 0.1% VO = 2 VPP (Step) 20 ns
DISTORTION and NOISE RESPONSE
en Input referred voltage noise f = 1 MHz (LMH6624) 0.92 nV/√Hz
f = 1 MHz (LMH6626) 1.0
in Input referred current noise f = 1 MHz (LMH6624) 2.3 pA/√Hz
f = 1 MHz (LMH6626) 1.8
HD2 2nd harmonic distortion fC = 10 MHz, VO = 1 VPP, RL 100 Ω −60 dBc
HD3 3rd harmonic distortion fC = 10 MHz, VO = 1 VPP, RL 100 Ω −76 dBc
INPUT CHARACTERISTICS
VOS Input offset voltage VCM = 0 V −0.75 −0.25 +0.75 mV
-40°C ≤ TJ ≤ 125°C −0.95 +0.95
Average drift(5) VCM = 0 V ±0.25 μV/°C
IOS Input offset current VCM = 0 V −1.5 −0.05 +1.5 μA
-40°C ≤ TJ ≤ 125°C −2.0 +2.0
Average drift(5) VCM = 0 V 2 nA/°C
IB Input bias current VCM = 0 V 13 +20 μA
-40°C ≤ TJ ≤ 125°C +25
Average drift(5) VCM = 0 V 12 nA/°C
RIN Input resistance(7) Common Mode 6.6 MΩ
Differential Mode 4.6 kΩ
CIN Input capacitance(7) Common Mode 0.9 pF
Differential Mode 2.0
CMRR Common mode rejection ratio Input Referred, VCM = −0.5 to +1.9 V 87 90 dB
Input Referred,
VCM = −0.5 to +1.75 V		 -40°C ≤ TJ ≤ 125°C 85
TRANSFER CHARACTERISTICS
AVOL Large signal voltage gain (LMH6624)
RL = 100 Ω, VO = −1 V to +1 V		 75 79 dB
-40°C ≤ TJ ≤ 125°C 70
(LMH6626)
RL = 100 Ω, VO = −1 V to +1 V		 72 79
-40°C ≤ TJ ≤ 125°C 67
Xt Crosstalk rejection f = 1 MHz (LMH6626) −75 dB
OUTPUT CHARACTERISTICS
VO Output swing RL = 100 Ω ±1.1 ±1.5 V
-40°C ≤ TJ ≤ 125°C ±1.0
No Load ±1.4 ±1.7
-40°C ≤ TJ ≤ 125°C ±1.25
RO Output impedance f ≤ 100 KHz 10 mΩ
ISC Output short circuit current (LMH6624)
Sourcing to Ground
ΔVIN = 200 mV (2)(8)		 90 145 mA
-40°C ≤ TJ ≤ 125°C 75
(LMH6624)
Sinking to Ground
ΔVIN = −200 mV (2)(8)		 90 145
-40°C ≤ TJ ≤ 125°C 75
(LMH6626)
Sourcing to Ground
ΔVIN = 200 mV (2)(8)		 60 120
-40°C ≤ TJ ≤ 125°C 50
(LMH6626)
Sinking to Ground
ΔVIN = −200 mV (2)(8)		 60 120
-40°C ≤ TJ ≤ 125°C 50
IOUT Output current (LMH6624)
Sourcing, VO = +0.8 V
Sinking, VO = −0.8 V		 100 mA
(LMH6626)
Sourcing, VO = +0.8 V
Sinking, VO = −0.8 V		 75
POWER SUPPLY
PSRR Power supply rejection ratio VS = ±2.0 V to ±3.0 V 82
 90 dB
-40°C ≤ TJ ≤ 125°C 80
IS Supply current (per channel) No Load 11.4 16 mA
-40°C ≤ TJ ≤ 125°C 18

6.6 Electrical Characteristics ±6 V

Unless otherwise specified, all limits ensured at TA = 25°C, V+ = 6 V, V− = −6 V, VCM = 0 V, AV = +20, RF = 500 Ω,
RL = 100 Ω. See (9).
PARAMETER TEST CONDITIONS MIN(4) TYP(3) MAX(4) UNIT
DYNAMIC PERFORMANCE
fCL −3dB BW VO = 400 mVPP (LMH6624) 95 MHz
VO = 400 mVPP (LMH6626) 85
SR Slew rate(6) VO = 2 VPP, AV = +20 (LMH6624) 350 V/μs
VO = 2 VPP, AV = +20 (LMH6626) 320
VO = 2 VPP, AV = +10 (LMH6624) 400
VO = 2 VPP, AV = +10 (LMH6626) 360
tr Rise time VO = 400 mV Step, 10% to 90% 3.7 ns
tf Fall time VO = 400 mV Step, 10% to 90% 3.7 ns
ts Settling time 0.1% VO = 2 VPP (Step) 18 ns
DISTORTION and NOISE RESPONSE
en Input referred voltage noise f = 1 MHz (LMH6624) 0.92 nV/√Hz
f = 1 MHz (LMH6626) 1.0
in Input referred current noise f = 1 MHz (LMH6624) 2.3 pA/√Hz
f = 1 MHz (LMH6626) 1.8
HD2 2nd harmonic distortion fC = 10 MHz, VO = 1 VPP, RL = 100 Ω −63 dBc
HD3 3rd harmonic distortion fC = 10 MHz, VO = 1 VPP, RL = 100 Ω −80 dBc
INPUT CHARACTERISTICS
VOS Input offset voltage VCM = 0 V −0.5 ±0.10 +0.5 mV
-40°C ≤ TJ ≤ 125°C −0.7 +0.7
Average drift(5) VCM = 0 V ±0.2 μV/°C
IOS Input offset current (LMH6624)
VCM = 0 V		 −1.1
 0.05 1.1 μA
-40°C ≤ TJ ≤ 125°C −2.5 2.5
(LMH6626)
VCM = 0 V		 −2.0 0.1 2.0
-40°C ≤ TJ ≤ 125°C −2.5 2.5
Average drift(5) VCM = 0 V 0.7 nA/°C
IB Input bias current VCM = 0 V 13 +20 μA
-40°C ≤ TJ ≤ 125°C +25
Average drift(5) VCM = 0 V 12 nA/°C
RIN Input resistance(7) Common Mode 6.6 MΩ
Differential Mode 4.6 kΩ
CIN Input capacitance(7) Common Mode 0.9 pF
Differential Mode 2.0
CMRR Common mode rejection ratio Input Referred, VCM = −4.5 to +5.25 V 90 95 dB
Input Referred,
VCM = −4.5 to +5.0 V		 -40°C ≤ TJ ≤ 125°C 87
TRANSFER CHARACTERISTICS
AVOL Large signal voltage gain (LMH6624)
RL = 100 Ω, VO = −3 V to +3 V		 77
 81 dB
-40°C ≤ TJ ≤ 125°C 72
(LMH6626)
RL = 100 Ω, VO = −3 V to +3 V		 74 80
-40°C ≤ TJ ≤ 125°C 70
Xt Crosstalk rejection f = 1MHz (LMH6626) −75 dB
OUTPUT CHARACTERISTICS
VO Output swing (LMH6624)
RL = 100 Ω 		±4.4 ±4.9 V
-40°C ≤ TJ ≤ 125°C ±4.3
(LMH6624)
No Load		 ±4.8 ±5.2
-40°C ≤ TJ ≤ 125°C ±4.65
(LMH6626)
RL = 100 Ω		 ±4.3 ±4.8
-40°C ≤ TJ ≤ 125°C ±4.2
(LMH6626)
No Load 		±4.8 ±5.2
-40°C ≤ TJ ≤ 125°C ±4.65
RO Output impedance f ≤ 100 KHz 10 mΩ
ISC Output short circuit current (LMH6624)
Sourcing to Ground
ΔVIN = 200 mV (2)(8)		 100 156 mA
-40°C ≤ TJ ≤ 125°C 85
(LMH6624)
Sinking to Ground
ΔVIN = −200 mV (2)(8)		 100 156
-40°C ≤ TJ ≤ 125°C 85
(LMH6626)
Sourcing to Ground
ΔVIN = 200 mV (2)(8)		 65 120
-40°C ≤ TJ ≤ 125°C 55
(LMH6626)
Sinking to Ground
ΔVIN = −200 mV(2)(8)		 65 120
-40°C ≤ TJ ≤ 125°C 55
IOUT Output current (LMH6624)
Sourcing, VO = +4.3 V
Sinking, VO = −4.3 V		 100 mA
(LMH6626)
Sourcing, VO = +4.3 V
Sinking, VO = −4.3 V 		80
POWER SUPPLY
PSRR Power supply rejection ratio VS = ±5.4 V to ±6.6 V 82 88 dB
-40°C ≤ TJ ≤ 125°C 80
IS Supply current (per channel) No Load 12 16 mA
-40°C ≤ TJ ≤ 125°C 18
(1) Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test conditions, see the Electrical Characteristics.
(2) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C.
(3) Typical Values represent the most likely parametric norm.
(4) All limits are specified by testing or statistical analysis.
(5) Average drift is determined by dividing the change in parameter at temperature extremes into the total temperature change.
(6) Slew rate is the slowest of the rising and falling slew rates.
(7) Simulation results.
(8) Short circuit test is a momentary test. Output short circuit duration is 1.5 ms.
(9) Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. Absolute maximum ratings indicate junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.

6.7 Typical Characteristics

20058962.png
Figure 1. Voltage Noise vs. Frequency
20058989.gif
VS = ±2.5 V
VIN = 5 mVpp
RL = 100 Ω
Figure 3. Inverting Frequency Response
20058904.gif
VS = ±2.5 V
RF = 500 Ω
VO = 2 Vpp
Figure 5. Non-Inverting Frequency Response
20058966.gif
VS = ±2.5 V
Figure 7. Open Loop Frequency Response
Over Temperature
20058984.gif
VS = ±2.5V RISO = 10 Ω
AV = +10 RL = 1 kΩ||CL
RF = 250 Ω
Figure 9. Frequency Response with Cap. Loading
20058987.gif
VS = ±2.5 V RISO = 100 Ω
AV = +10 RL = 1 kΩ||CL
RF = 250 Ω
Figure 11. Frequency Response with Cap. Loading
20058906.gif
VS = ±-2.5 V
AV = +10
RF = 500 Ω
Figure 13. Non-Inverting Frequency Response Varying VIN
20058908.gif
VS = ±2.5 V
AV = +20
RF = 500 Ω
Figure 15. Non-Inverting Frequency Response Varying VIN (LMH6624)
20058907.gif
VS = ±6 V
AV = +20
RF = 500 Ω
Figure 17. Non-Inverting Frequency Response Varying VIN (LMH6624)
20058957.gif
VS = ±2.5 V
Figure 19. Sourcing Current vs. VOUT (LMH6624)
20058954.gif
VS = ±6 V
Figure 21. Sourcing Current vs. VOUT (LMH6624)
20058967.gif
Figure 23. VOS vs. VSUPPLY (LMH6624)
20058958.gif
VS = ±2.5 V
Figure 25. Sinking Current vs. VOUT (LMH6624)
20058956.gif
VS = ±6 V
Figure 27. Sinking Current vs. VOUT (LMH6624)
20058953.gif
Figure 29. IOS vs. VSUPPLY
20058944.gif
AV = +10
RL = 100 Ω
Figure 31. Distortion vs. Frequency
20058945.gif
AV = +20
RL = 500 Ω
Figure 33. Distortion vs. Frequency
20058943.gif
AV = +20
AV = ±2.5V
RL = 100 Ω
Figure 35. Distortion vs. VOUT Peak to Peak
20058973.gif
VS = ±2.5 V RL = 100 Ω
VO = 1 Vpp
AV = +10
Figure 37. Non-Inverting Large Signal Pulse Response
20058975.gif
VS = ±2.5 V RL = 100 Ω
VO = 200 mv
AV = +10
Figure 39. Non-Inverting Small Signal Pulse Response
20058948.gif
VS = ±2.5 V
Figure 41. PSRR vs. Frequency
20058901.gif
VS = ±2.5V
VIN = 5 mVpp
Figure 43. Input Referred CMRR vs. Frequency
20058983.gif
VS = ±2.5 V
AV = +10
RL = 100 Ω
Figure 45. Amplifier Peaking with Varying RF
20058963.png
Figure 2. Current Noise vs. Frequency
20058988.gif
VS = ±6V
VIN = 5 mVpp
RL = 100 Ω
Figure 4. Inverting Frequency Response
20058903.gif
VS = ±6 V
RF = 500 Ω
VO = 2 Vpp
Figure 6. Non-Inverting Frequency Response
20058964.png
VS = ±6V
RL = 100 Ω
Figure 8. Open Loop Frequency Response
Over Temperature
20058986.gif
VS = ±6V RISO = 10 Ω
AV = +10 RL = 1 kΩ||CL
RF = 250 Ω
Figure 10. Frequency Response with Cap. Loading
20058985.gif
VS = ±6 V RISO = 10 Ω
AV = +10 RL = 1 kΩ||CL
RF = 250 Ω
Figure 12. Frequency Response with Cap. Loading
20058905.gif
VS = ±6 V
AV = +10
RF = 500 Ω
Figure 14. Non-Inverting Frequency Response Varying VIN
20058981.gif
VS = ±2.5 V
AV = +20
RF = 500 Ω
Figure 16. Non-Inverting Frequency Response Varying VIN (LMH6626)
20058980.gif
VS = ±6 V
AV = +20
RF = 500 Ω
Figure 18. Non-Inverting Frequency Response Varying VIN (LMH6626)
20058972.gif
VS = ±2.5 V
Figure 20. Sourcing Current vs. VOUT (LMH6626)
20058969.gif
VS = ±6 V
Figure 22. Sourcing Current vs. VOUT (LMH6626)
20058968.gif
Figure 24. VOS vs. VSUPPLY (LMH6626)
20058971.gif
VS = ±2.5V
Figure 26. Sinking Current vs. VOUT (LMH6626)
20058970.gif
VS = ±6 V
Figure 28. Sinking Current vs. VOUT (LMH6626)
20058979.gif
VIN = 60 mVpp
AV = +20
RL = 100 Ω
Figure 30. Crosstalk Rejection vs. Frequency (LMH6626)
20058946.gif
AV = +20
RL = 100 Ω
Figure 32. Distortion vs. Frequency
20058978.gif
VS = ±6 V
VO = 2 Vpp
Figure 34. Distortion vs. Gain
20058977.gif
AV = +20
VS = ±6 V
RL = 100 Ω
Figure 36. Distortion vs. VOUT Peak to Peak
20058974.gif
VS = ±6 V RL = 100 Ω
VO = 1 Vpp
AV = +20
Figure 38. Non-Inverting Large Signal Pulse Response
20058976.gif
VS = ±6 V RL = 100 Ω
VO = 500 mv
AV = +20
Figure 40. Non-Inverting Small Signal Pulse Response
20058949.gif
VS = ±6 V
Figure 42. PSRR vs. Frequency
20058902.gif
VS = ±6 V
VIN = 5 mVpp
Figure 44. Input Referred CMRR vs. Frequency
20058982.gif
VS = ±6 V
AV = +10 V
RL = 100 Ω
Figure 46. Amplifier Peaking with Varying RF