JAJSFC0E December 2013 – January 2022 LMK00334
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
CURRENT CONSUMPTION (1) | |||||||
ICC_CORE | Core supply current, all outputs disabled | CLKinX selected | 8.5 | 10.5 | mA | ||
OSCin selected | 10 | 13.5 | mA | ||||
ICC_HCSL | 50 | 58.5 | mA | ||||
ICC_CMOS | 3.5 | 5.5 | mA | ||||
ICCO_HCSL | Additive output supply current, HCSL banks enabled | Includes output bank bias and load currents for both banks, RT = 50 Ω on all outputs | 65 | 81.5 | mA | ||
ICCO_CMOS | Additive output supply current, LVCMOS output enabled | 200 MHz, CL = 5 pF | VCCO = 3.3 V ±5% | 9 | 10 | mA | |
VCCO = 2.5V ± 5% | 7 | 8 | mA | ||||
POWER SUPPLY RIPPLE REJECTION (PSRR) | |||||||
PSRRHCSL | Ripple-induced phase spur level(2) Differential HCSL Output | 156.25 MHz | –72 | dBc | |||
312.5 MHz | –63 | ||||||
CMOS CONTROL INPUTS (CLKin_SELn, CLKout_TYPEn, REFout_EN) | |||||||
VIH | High-level input voltage | 1.6 | VCC | V | |||
VIL | Low-level input voltage | GND | 0.4 | V | |||
IIH | High-level input current | VIH = VCC, internal pulldown resistor | 50 | μA | |||
IIL | Low-level input current | VIL = 0 V, internal pulldown resistor | –5 | 0.1 | μA | ||
CLOCK INPUTS (CLKin0/CLKin0*, CLKin1/CLKin1*) | |||||||
fCLKin | Input frequency range(8) | Functional up to 400 MHz Output frequency range and timing specified per output type (refer to LVCMOS output specifications) | DC | 400 | MHz | ||
VIHD | Differential input high voltage | CLKin driven differentially | Vcc | V | |||
VILD | Differential input low voltage | GND | V | ||||
VID | Differential input voltage swing(3) | 0.15 | 1.3 | V | |||
VCMD | Differential input CMD common-mode voltage | VID = 150 mV | 0.25 | VCC – 1.2 | V | ||
VID = 350 mV | 0.25 | VCC – 1.1 | |||||
VID = 800 mV | 0.25 | VCC – 0.9 | |||||
VIH | Single-ended input IH high voltage | CLKinX driven single-ended (AC- or DC-coupled), CLKinX* AC-coupled to GND or externally biased within VCM range | VCC | V | |||
VIL | Single-ended input IL low voltage | GND | V | ||||
VI_SE | Single-ended input voltage swing(8) | 0.3 | 2 | Vpp | |||
VCM | Single-ended input CM common-mode voltage | 0.25 | VCC – 1.2 | V | |||
ISOMUX | Mux isolation, CLKin0 to CLKin1 | fOFFSET > 50 kHz, PCLKinX = 0 dBm | fCLKin0 = 100 MHz | –84 | dBc | ||
fCLKin0 = 200 MHz | –82 | ||||||
fCLKin0 = 500 MHz | –71 | ||||||
fCLKin0 = 1000 MHz | –65 | ||||||
CRYSTAL INTERFACE (OSCin, OSCout) | |||||||
FCLK | External clock frequency range(8) | OSCin driven single-ended, OSCout floating | 250 | MHz | |||
FXTAL | Crystal frequency range | Fundamental mode crystal ESR ≤ 200 Ω (10 to 30 MHz) ESR ≤ 125 Ω (30 to 40 MHz)(4) | 10 | 40 | MHz | ||
CIN | OSCin input capacitance | 1 | pF | ||||
HCSL OUTPUTS (CLKoutAn/CLKoutAn*, CLKoutBn/CLKoutBn*) | |||||||
fCLKout | Output frequency range(8) | RL = 50 Ω to GND, CL ≤ 5 pF | DC | 400 | MHz | ||
JitterADD_PCle | Additive RMS phase jitter for PCIe 5.0(8) | PCIe Gen 5 filter | CLKin: 100 MHz, slew rate ≥ 0.5 V/ns | 0.015 | 0.03 | ps | |
JitterADD_PCle | Additive RMS phase jitter for PCIe 4.0(8) | PCIe Gen 4, PLL BW = 2–5 MHz, CDR = 10 MHz | CLKin: 100 MHz, slew rate ≥ 1.8 V/ns | 0.03 | 0.05 | ps | |
JitterADD_PCle | Additive RMS phase jitter for PCIe 3.0(8) | PCIe Gen 3, PLL BW = 2–5 MHz, CDR = 10 MHz | CLKin: 100 MHz, slew rate ≥ 0.6 V/ns | 0.03 | 0.15 | ps | |
JitterADD | Additive RMS jitter integration bandwidth 12 MHz to 20 MHz(5) | VCCO = 3.3 V, RT = 50 Ω to GND | CLKin: 100 MHz, slew rate ≥ 3 V/ns | 77 | fs | ||
Noise Floor | Noise floor fOFFSET ≥ 10 MHz(6)(7) | VCCO = 3.3 V, RT = 50 Ω to GND | CLKin: 100 MHz, slew rate ≥ 3 V/ns | –161.3 | dBc/Hz | ||
DUTY | Duty cycle(8) | 50% input clock duty cycle | 45% | 55% | |||
VOH | Output high voltage | TA = 25°C, DC measurement, RT = 50 Ω to GND | 520 | 810 | 920 | mV | |
–150 | 0.5 | 150 | mV | ||||
VOL | Output low voltage | ||||||
VCROSS | Absolute crossing voltage(8)(9) | RL = 50 Ω to GND, CL ≤ 5 pF | 250 | 350 | 460 | mV | |
140 | mV | ||||||
ΔVCROSS | Total variation of VCROSS(8)(9) | ||||||
tR | Output rise time 20% to 80%(9)(12) | 250 MHz, uniform transmission line up to 10 in. with 50-Ω characteristic impedance, RL = 50 Ω to GND, CL ≤ 5 pF | 225 | 400 | ps | ||
tF | Output fall time 80% to 20%(9)(12) | 225 | 400 | ps | |||
LVCMOS OUTPUT (REFout) | |||||||
fCLKout | Output frequency range(8) | CL ≤ 5 pF | DC | 250 | MHz | ||
JitterADD | Additive RMS jitter integration bandwidth 1 MHz to 20 MHz(5) | VCCO = 3.3 V, CL ≤ 5 pF | 100 MHz, input slew rate ≥ 3 V/ns | 95 | fs | ||
Noise Floor | Noise floor fOFFSET ≥ 10 MHz(6)(7) | VCCO = 3.3 V, CL ≤ 5 pF | 100 MHz, input slew rate ≥ 3 V/ns | –159.3 | dBc/Hz | ||
DUTY | Duty cycle(8) | 50% input clock duty cycle | 45% | 55% | |||
VOH | Output high voltage | 1-mA load | VCCO – 0.1 | V | |||
VOL | Output low voltage | 0.1 | V | ||||
IOH | Output high current (source) | VO = VCCO / 2 | VCCO = 3.3 V | 28 | mA | ||
VCCO = 2.5 V | 20 | ||||||
VCCO = 3.3 V | 28 | mA | |||||
VCCO = 2.5 V | 20 | ||||||
IOL | Output low current (sink) | ||||||
tR | Output rise time 20% to 80%(9)(12) | 250 MHz, uniform transmission line up to 10 in. with 50-Ω characteristic impedance, RL = 50 Ω to GND, CL ≤ 5 pF | 225 | 400 | ps | ||
tF | Output fall time 80% to 20%(10)(12) | 225 | 400 | ps | |||
tEN | Output enable time(10) | CL ≤ 5 pF | 3 | cycles | |||
tDIS | Output disable time(10) | 3 | cycles |