DATA SHEET
LMV55x 3MHz、Micropower RROアンプ
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1 特長
- 3Vおよび5Vでの性能を規定
- 高いユニティ・ゲイン帯域幅: 3MHz
- 消費電流(アンプごと): 37µA
- CMRR: 93dB
- PSRR: 90dB
- スルーレート: 1V/µs
- 100kΩ負荷における出力スイング: レールから70mV
- 全高調波歪み: 1kHz、2kΩにおいて0.003%
- 温度範囲: -40℃～125℃
2 アプリケーション
- アクティブ・フィルタ
- 携帯機器
- 車載用機器
- バッテリ電源システム
- センサおよび計測機器
3 概要
LMV55xは高性能、低消費電力のオペアンプで、TIの先進のVIP50プロセスにより実装されています。3MHzの帯域幅を持ちながら、アンプごとに37µAの電流しか消費せず、このクラスのオペアンプとしては極めて優れた帯域幅/電力比を実現しています。これらの超低消費電力アンプはユニティ・ゲイン安定で、広い帯域幅を必要とする超低消費電力アプリケーション向けの非常に優れたソリューションです。
LMV55xにはレール・ツー・レール出力段があり、同相入力範囲がグランドより低い電圧まで拡張されています。
LMV55xは、2.7V～5.5Vの範囲の電源電圧で動作します。これらのアンプは広い温度範囲(-40℃～125℃)で動作するため、車載用アプリケーション、センサ・アプリケーションに加えて、携帯用計測機器アプリケーションにも最適です。LMV551は超小型の5ピンのSC70および5ピンのSOT-23パッケージで供給されます。LMV552は8ピンのVSSOPパッケージで供給されます。LMV554は14ピンのTSSOPで供給されます。
製品情報(1)
| 型番 | パッケージ | 本体サイズ(公称) |
|---|---|---|
| LM551 | SOT-23 (5) | 2.90mm×1.60mm |
| SC70 (5) | 2.00mm×1.25mm | |
| LMV552 | VSSOP (8) | 3.00mm×3.00mm |
| LMV554 | TSSOP (14) | 5.00mm×4.40mm |
- 提供されているすべてのパッケージについては、データシートの末尾にある注文情報を参照してください。
代表的なアプリケーションの回路図
オープン・ループ・ゲインおよび位相と周波数との 関係
4 改訂履歴
Changes from G Revision (February 2013) to H Revision
- Added 「ESD定格」表、「機能説明」セクション、「デバイスの機能モード」セクション、「アプリケーションと実装」セクション、「電源に関する推奨事項」セクション、「レイアウト」セクション、「デバイスおよびドキュメントのサポート」セクション、「メカニカル、パッケージ、および注文情報」セクションGo
- Changed values in the Thermal Information table to align with JEDEC standards.Go
Changes from F Revision (February 2013) to G Revision
- Changed layout of National Semiconductor Data Sheet to TI format.Go
5 Pin Configuration and Functions
DBV and DCK Packages
5-Pin SOT-23 and SC70
Top View
DGK Package
8-Pin VSSOP
Top View
PW Package
14-Pin TSSOP
Top View
Pin Functions: LMV551
| PIN | TYPE(1) | DESCRIPTION | |||
|---|---|---|---|---|---|
| NAME | LMV551 | ||||
| SOT-23, SC70 | |||||
| +IN | 1 | I | Noninverting Input | ||
| -IN | 3 | I | Inverting Input | ||
| OUT | 4 | O | Output | ||
| V- | 2 | P | Negative Supply | ||
| V+ | 5 | P | Positive Supply | ||
(1) I = Input; O = Output; P = Power
Pin Functions: LMV552 and LMV554
| PIN | TYPE(1) | DESCRIPTION | |||
|---|---|---|---|---|---|
| NAME | LMV552 | LMV554 | |||
| SOIC, VSSOP | SOIC, TSSOP | ||||
| +IN A | 3 | 3 | I | Noninverting input, channel A | |
| +IN B | 5 | 5 | I | Noninverting input, channel B | |
| +IN C | — | 10 | I | Noninverting input, channel C | |
| +IN D | — | 12 | I | Noninverting input, channel D | |
| –IN A | 2 | 2 | I | Inverting input, channel A | |
| –IN B | 6 | 6 | I | Inverting input, channel B | |
| –IN C | — | 9 | I | Inverting input, channel C | |
| –IN D | — | 13 | I | Inverting input, channel D | |
| OUT A | 1 | 1 | O | Output, channel A | |
| OUT B | 7 | 7 | O | Output, channel B | |
| OUT C | — | 8 | O | Output, channel C | |
| OUT D | — | 14 | O | Output, channel D | |
| V+ | 8 | 4 | P | Positive (highest) power supply | |
| V– | 4 | 11 | P | Negative (lowest) power supply | |
(1) I = Input; O = Output; P = Power
6 Specifications
6.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted)(1)(2)| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| VIN Differential (at V+ = 5 V) | ±2.5 | V | ||
| Supply voltage (V+ – V−) | 6 | V | ||
| Voltage at input/output pins | V− –0.3 | V+ +0.3 | V | |
| Junction temperature, TJ (3) | 150 | °C | ||
| Storage temperature, Tstg | –65 | 150 | °C | |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office / Distributors for availability and specifications.
(3) The maximum power dissipation is a function of TJ(MAX), θJA, The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) - TA)/ θJA. All numbers apply for packages soldered directly onto a PC board.
6.2 ESD Ratings
| VALUE | UNIT | ||||
|---|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM)(1) | ±2000 | V | |
| Machine model (MM)(2) | LMV551 | ±100 | |||
| LMV552 / LMV554 | ±250 | ||||
(1) Human Body Model, applicable std. MIL-STD-883, Method 3015.7.
(2) Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC) Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
6.3 Recommended Operating Conditions
Over operating free-air temperature range (unless otherwise noted)| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| Temperature (1) | –40 | 125 | °C | ||
| Supply voltage (V+ – V−) | 2.7 | 5.5 | V | ||
(1) The maximum power dissipation is a function of TJ(MAX), θJA, The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) - TA)/ θJA. All numbers apply for packages soldered directly onto a PC board.
6.4 Thermal Information
| THERMAL METRIC(1) | LMV551 | LMV552 | LMV554 | UNIT | ||
|---|---|---|---|---|---|---|
| DBV (SOT-23) |
DCK (SC70) |
DGK (VSSOP) |
PW (TSSOP) |
|||
| 5 PINS | 5 PINS | 8 PINS | 14 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 213.6 | 303.5 | 200.3 | 134.9 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 174.8 | 135.5 | 89.1 | 60.9 | °C/W |
| RθJB | Junction-to-board thermal resistance | 72.6 | 81.1 | 120.9 | 77.3 | °C/W |
| ψJT | Junction-to-top characterization parameter | 56.6 | 8.4 | 21.7 | 11.5 | °C/W |
| ψJB | Junction-to-board characterization parameter | 72.2 | 80.4 | 119.4 | 76.7 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | n/a | n/a | n/a | n/a | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
6.5 Electrical Characteristics: 3 V
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 3 V, V− = 0 V, VCM = V+/2 = VO. (1)| PARAMETER | TEST CONDITIONS | MIN (2) |
TYP(2) | MAX(2) | UNIT | |||
|---|---|---|---|---|---|---|---|---|
| VOS | Input offset voltage | TA = 25°C | 1 | 3 | mV | |||
| TA = –40°C to 125°C | 4.5 | |||||||
| TC VOS | Input offset average drift | TA = –40°C to 125°C | 3.3 | µV/°C | ||||
| IB | Input bias current(3) | TA = 25°C | 20 | 38 | nA | |||
| IOS | Input offset current | TA = 25°C | 1 | 20 | nA | |||
| CMRR | Common mode rejection ratio | 0 V ≤ VCM 2 V | TA = 25°C | 74 | 92 | dB | ||
| TA = –40°C to +125°C | 72 | |||||||
| PSRR | Power supply rejection ratio | 3 ≤ V+ ≤ 5 V, VCM = 0.5 V |
LMV551 and LMV552 | TA = 25°C | 80 | 92 | dB | |
| TA = –40°C to +125°C | 78 | |||||||
| LMV554 | TA = 25°C | 78 | 92 | |||||
| TA = –40°C to +125°C | 76 | |||||||
| 2.7 ≤ V+ ≤ 5.5 V, VCM = 0.5 V |
LMV551 and LMV552 | TA = 25°C | 80 | 92 | ||||
| TA = –40°C to +125°C | 78 | |||||||
| LMV554 | TA = 25°C | 78 | 92 | |||||
| TA = -40°C to +125°C | 76 | |||||||
| CMVR | Input common-mode voltage | CMRR ≥ 68 dB | TA = 25°C | 0 | 2.1 | V | ||
| CMRR ≥ 60 dB | TA = -40°C to +125°C | 0 | 2.1 | |||||
| AVOL | Large signal voltage gain | 0.4 ≤ VO ≤ 2.6, RL = 100 kΩ to V+/2 |
LMV551 and LMV552 | TA = 25°C | 81 | 90 | dB | |
| TA = –40°C to +125°C | 78 | |||||||
| LMV554 | TA = 25°C | 79 | 90 | |||||
| TA = –40°C to +125°Ce | 77 | |||||||
| 0.4 ≤ VO ≤ 2.6, RL = 10 kΩ to V+/2 | TA = 25°C | 71 | 80 | |||||
| TA = -40°C to +125°C | 68 | |||||||
| VO | Output swing high | RL = 100 kΩ to V+/2 | TA = 25°C | 40 | 48 | mV from rail | ||
| TA = –40°C to +125°C | 58 | |||||||
| RL = 10 kΩ to V+/2 | TA = 25°C | 85 | 100 | |||||
| TA = –40°C to +125°C | 120 | |||||||
| Output swing low | RL = 100 kΩ to V+/2 | TA = 25°C | 50 | 65 | ||||
| TA = –40°C to +125°C | 77 | |||||||
| RL = 10 kΩ to V+/2 | TA = 25°C | 95 | 110 | |||||
| TA = –40°C to +125°C | 130 | |||||||
| ISC | Output short circuit current | Sourcing (5) | 10 | mA | ||||
| Sinking (5) | 25 | |||||||
| IS | Supply current per amplifier | TA = 25°C | 34 | 42 | µA | |||
| TA = –40°C to +125°C | 52 | |||||||
| SR | Slew rate | AV = +1, 10% to 90% (4) |
1 | V/µs | ||||
| Φm | Phase margin | RL = 10 kΩ, CL = 20 pF | 75 | ° | ||||
| GBW | Gain bandwidth product | 3 | MHz | |||||
| en | Input-referred voltage noise | f = 100 kHz | 70 | nV/√Hz | ||||
| f = 1 kHz | 70 | |||||||
| In | Input-referred current noise | f = 100 kHz | 0.1 | pA/√Hz | ||||
| f = 1 kHz | 0.15 | |||||||
| THD | Total harmonic distortion | f = 1 kHz, AV = 2, RL = 2 kΩ | 0.003% | |||||
(1) Electrical Table values apply only for factor testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ = TA.
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlations using statistical quality control (SQC) method.
(3) Positive current corresponds to current flowing into the device.
(4) Slew rate is the average of the rising and falling slew rates.
(5) The part is not short-circuit protected and is not recommended for operation with heavy resistive loads.
6.6 Electrical Characteristics: 5 V
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 5 V, V− = 0 V, VCM = V+/2 = VO. (1)| PARAMETER | TEST CONDITIONS | MIN(2) | TYP(3) | MAX(2) | UNIT | ||
|---|---|---|---|---|---|---|---|
| VOS | Input offset voltage | TA = 25°C | 1 | 3 | mV | ||
| TA = –40°C to +125°C | 4.5 | ||||||
| TC VOS | Input offset average drift | TA = 25°C | 3.3 | µV/°C | |||
| IB | Input bias current (4) | TA = 25°C | 20 | 38 | nA | ||
| IOS | Input offset current | 1 | 20 | nA | |||
| CMRR | Common mode rejection ratio | TA = 25°C | 76 | 93 | nA | ||
| TA = –40°C to +125°C | 74 | ||||||
| PSRR | Power supply rejection ratio | 3 V ≤ V+ ≤ 5 V to VCM = 0.5 V | TA = 25°C | 78 | 90 | dB | |
| TA = –40°C to +125°C | 75 | ||||||
| 2.7 V ≤ V+ ≤ 5.5 V to VCM = 0.5 V | TA = 25°C | 78 | 90 | ||||
| TA = –40°C to +125°C | 75 | ||||||
| CMVR | Input common-mode voltage | CMRR ≥ 68 dB CMRR ≥ 60 dB |
TA = 25°C | 0 | 4.1 | V | |
| TA = –40°C to +125°C | 0 | 4.1 | |||||
| AVOL | Large signal voltage gain | 0.4 ≤ VO ≤ 4.6, RL = 100 kΩ to V+/2 | 78 | 90 | dB | ||
| 75 | |||||||
| 0.4 ≤ VO ≤ 4.6, RL = 10 kΩ to V+/2 | 75 | 80 | |||||
| 72 | |||||||
| VO | Output swing high | RL = 100 kΩ to V+/2 | TA = 25°C | 70 | 92 | mV from rail | |
| TA = –40°C to +125°C | 122 | ||||||
| RL = 10 kΩ to V+/2 | TA = 25°C | 125 | 155 | ||||
| TA = –40°C to +125°C | 210 | ||||||
| Output swing low | RL = 100 kΩ to V+/2 | TA = 25°C | 60 | 70 | |||
| TA = –40°C to +125°C | 82 | ||||||
| RL = 10 kΩ to V+/2 | TA = 25°C | 110 | 130 | ||||
| TA = –40°C to +125°C | 155 | ||||||
| ISC | Output short-circuit current | Sourcing (5) | 10 | mA | |||
| Sinking (5) | 25 | ||||||
| IS | Supply current per amplifier | TA = 25°C | 37 | 46 | µA | ||
| TA = –40°C to +125°C | 54 | ||||||
| SR | Slew rate | AV = +1, VO = 1 VPP
10% to 90% (6) |
1 | V/µs | |||
| Φm | Phase margin | RL = 10 kΩ, CL = 20 pF | 75 | ° | |||
| GBW | Gain bandwidth product | 3 | MHz | ||||
| en | Input-referred voltage noise | f = 100 kHz | 70 | nV/√Hz | |||
| f = 1 kHz | 70 | ||||||
| In | Input-referred current noise | f = 100 kHz | 0.1 | pA/√Hz | |||
| f = 1 kHz | 0.15 | ||||||
| THD | Total harmonic distortion | f = 1 kHz, AV = 2, RL = 2 kΩ | 0.003% | ||||
(1) Electrical Table values apply only for factor testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ = TA.
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlations using statistical quality control (SQC) method.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material.
(4) Positive current corresponds to current flowing into the device.
(5) The part is not short-circuit protected and is not recommended for operation with heavy resistive loads.
(6) Slew rate is the average of the rising and falling slew rates.
6.7 Typical Characteristics
