SNOSC69 Data sheet

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾⁽²⁾⁽³⁾

	MIN	MAX	UNIT
Differential input voltage	±Supply voltage
Supply voltage (V⁺–V⁻)		6	V
Voltage at input or output pin	V^– – 0.3	V⁺+ 0.3	V
Junction temperature, T_JMAX⁽⁴⁾		150	°C
Storage temperature, T_stg	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications.

(3) Soldering specifications for all packages available at www.ti.com and Absolute Maximum Ratings for Soldering.

(4) The maximum power dissipation is a function of T_J(MAX), R_θJA, and T_A. The maximum allowable power dissipation at any ambient temperature is P_D = (T_J(MAX) – T_A) / R_θJA. All numbers apply for packages soldered directly onto a PCB.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Machine model (MM)⁽²⁾	±200	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) Machine model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC) Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

	MIN	MAX	UNIT
Supply voltage	1.8	5.5	V
Temperature	–40	125	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		LMV611		LMV612		LMV614		UNIT
		DBV (SOT-23)	DCK (SC70)	D (SOIC)	DGK (VSSOP)	D (SOIC)	PW (TSSOP)
		5 PINS	5 PINS	8 PINS	8 PINS	14 PINS	14 PINS
R_θJA	Junction-to-ambient thermal resistance	197.2	285.9	125.9	184.5	94.4	124.8	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	156.7	115.9	70.2	74.3	52.5	51.4	°C/W
R_θJB	Junction-to-board thermal resistance	55.6	63.7	66.5	105.1	48.9	67.2	°C/W
ψ_JT	Junction-to-top characterization parameter	41.4	4.5	19.8	13.1	14.3	6.6	°C/W
ψ_JB	Junction-to-board characterization parameter	55	62.9	65.9	103.6	48.6	66.6	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	—	—	—	—	—	—	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics – 1.8 V (DC)

All limits ensured for T_J = 25°C, V⁺ = 1.8 V, V⁻ = 0 V, V_CM = V⁺/ 2, V_O = V⁺/ 2, and R_L > 1 MΩ (unless otherwise noted).⁽¹⁾

PARAMETER		TEST CONDITIONS		MIN⁽²⁾	TYP⁽³⁾	MAX⁽²⁾	UNIT
V_OS	Input offset voltage	LMV611 (single)			1	4	mV
V_OS	Input offset voltage	LMV612 (dual) and LMV614 (quad)			1	5.5	mV
TCV_OS	Input offset voltage average drift				5.5		µV/°C
I_B	Input bias current				15		nA
I_OS	Input offset current				13		nA
I_S	Supply current (per channel)				103	185	µA
CMRR	Common-mode rejection ratio	LMV611, 0 V ≤ V_CM ≤ 0.6 V, 1.4 V ≤ V_CM ≤ 1.8 V⁽⁴⁾		60	78		dB
		LMV612 and LMV614, 0 V ≤ V_CM ≤ 0.6 V, 1.4 V ≤ V_CM ≤ 1.8 V⁽⁴⁾		55	76
		−0.2 V ≤ V_CM ≤ 0 V, 1.8 V ≤ V_CM ≤ 2 V		50	72
PSRR	Power supply rejection ratio	1.8 V ≤ V⁺ ≤ 5 V			100		dB
CMVR	Input common-mode voltage	For CMRR range ≥ 50 dB	V^–, T_A = 25°C	V^–– 0.2	–0.2		V
			V⁺, T_A = 25°C		2.1	V⁺ + 0.2
			T_A = −40°C to 85°C	V^–		V⁺
			T_A = 125°C	V^– + 0.2		V⁺– 0.2
A_V	Large signal voltage gain LMV611 (single)	R_L = 600 Ω to 0.9 V, V_O = 0.2 V to 1.6 V, V_CM = 0.5 V		77	101		dB
	Large signal voltage gain LMV611 (single)	R_L = 2 kΩ to 0.9 V, V_O = 0.2 V to 1.6 V, V_CM = 0.5 V		80	105
	Large signal voltage gain LMV612 (dual) and LMV614 (quad)	R_L = 600 Ω to 0.9 V, V_O = 0.2 V to 1.6 V, V_CM = 0.5 V		75	90
	Large signal voltage gain LMV612 (dual) and LMV614 (quad)	R_L = 2 kΩ to 0.9 V, V_O = 0.2 V to 1.6 V, V_CM = 0.5 V		78	100
V_O	Output swing	R_L = 600 Ω to 0.9 V		1.65	1.72		V
		V_IN = ±100 mV			0.077	0.105
		R_L = 2 kΩ to 0.9 V		1.75	1.77
		V_IN = ±100 mV			0.024	0.035
I_O	Output short-circuit current⁽⁵⁾	Sourcing, V_O = 0 V, V_IN = 100 mV			8		mA
I_O	Output short-circuit current⁽⁵⁾	Sinking, V_O = 1.8 V, V_IN = –100 mV			9		mA

(1) Electrical characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that T_J = T_A. No assurance of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T_J > T_A. See Application and Implementation for information of temperature derating of the device. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.

(2) All limits are specified by testing or statistical analysis.

(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped production material.

(4) For specified temperature ranges, see Input common mode voltage specifications.

(5) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of 45 mA over long term may adversely affect reliability.

6.6 Electrical Characteristics – 1.8 V (AC)

All limits ensured for T_J = 25°C, V⁺ = 1.8 V, V⁻ = 0 V, V_CM = V⁺/ 2, V_O = V⁺/ 2, and R_L > 1 MΩ (unless otherwise noted).⁽¹⁾

PARAMETER		TEST CONDITIONS	TYP⁽³⁾	UNIT
SR	Slew rate⁽⁴⁾		0.35	V/µs
GBW	Gain-bandwidth product		1.4	MHz
Φ_m	Phase margin		67	°
G_m	Gain margin		7	dB
e_n	Input-referred voltage noise	f = 10 kHz, V_CM = 0.5 V	60	nV/√Hz
i_n	Input-referred current noise	f = 10 kHz	0.08	pA/√Hz
THD	Total harmonic distortion	f = 1 kHz, A_V = +1, R_L = 600 Ω, V_IN = 1 V_PP	0.023%
	Amp-to-amp isolation⁽⁵⁾		123	dB

(1) Electrical characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that T_J = T_A. No assurance of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T_J > T_A. See Application and Implementation for information of temperature derating of the device. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.

(2) All limits are specified by testing or statistical analysis.

(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped production material.

(4) Connected as voltage follower with input step from V⁻ to V⁺. Number specified is the slower of the positive and negative slew rates.

(5) Input-referred, R_L = 100 kΩ connected to V⁺ / 2. Each amp excited in turn with 1 kHz to produce V_O = 3 V_PP (for supply voltages < 3 V, V_O = V⁺).

6.7 Electrical Characteristics – 2.7 V (DC)

All limits ensured for T_J = 25°C, V⁺ = 2.7 V, V⁻ = 0 V, V_CM = V⁺/ 2, V_O = V⁺/ 2, and R_L > 1 MΩ (unless otherwise noted).⁽¹⁾

PARAMETER		TEST CONDITIONS		MIN⁽²⁾	TYP⁽³⁾	MAX⁽²⁾	UNIT
V_OS	Input offset voltage	LMV611 (single)			1	4	mV
V_OS	Input offset voltage	LMV612 (dual) and LMV614 (quad)			1	5.5	mV
TCV_OS	Input offset voltage average drift				5.5		µV/°C
I_B	Input bias current				15		nA
I_OS	Input offset current				8		nA
I_S	Supply current (per channel)				105	190	µA
CMRR	Common-mode rejection ratio	LMV611, 0 V ≤ V_CM ≤ 1.5 V, 2.3 V ≤ V_CM ≤ 2.7 V⁽⁴⁾		60	81		dB
		LMV612 and LMV614, 0 V ≤ V_CM ≤ 1.5 V, 2.3 V ≤ V_CM ≤ 2.7 V⁽⁴⁾		55	80
		−0.2 V ≤ V_CM ≤ 0 V, 2.7 V ≤ V_CM ≤ 2.9 V		50	74
PSRR	Power supply rejection ratio	1.8 V ≤ V⁺ ≤ 5 V, V_CM = 0.5 V			100		dB
V_CM	Input common-mode voltage	For CMRR range ≥ 50 dB	V^–,T_A = 25°C	V^–– 0.2	–0.2		V
			V⁺,T_A = 25°C		3	V⁺ + 0.2
			T_A = –40°C to 85°C	V^–		V⁺
			T_A = 125°C	V^– + 0.2		V⁺– 0.2
A_V	Large signal voltage gain LMV611 (single)	R_L = 600 Ω to 1.35 V, V_O = 0.2 V to 2.5 V		87	104		dB
	Large signal voltage gain LMV611 (single)	R_L = 2 kΩ to 1.35 V, V_O = 0.2 V to 2.5 V		92	110
	Large signal voltage gain LMV612 (dual) and LMV614 (quad)	R_L = 600 Ω to 1.35 V, V_O = 0.2 V to 2.5 V		78	90
	Large signal voltage gain LMV612 (dual) and LMV614 (quad)	R_L = 2 kΩ to 1.35 V, V_O = 0.2 V to 2.5 V		81	100
V_O	Output swing	R_L = 600 Ω to 1.35 V		2.55	2.62		V
		V_IN = ±100 mV			0.083	0.11
		R_L = 2 kΩ to 1.35 V		2.65	2.675
		V_IN = ±100 mV			0.025	0.04
I_O	Output short-circuit current⁽⁵⁾	Sourcing, V_O = 0 V, V_IN = 100 mV			30		mA
I_O	Output short-circuit current⁽⁵⁾	Sinking, V_O = 0 V, V_IN = –100 mV			25		mA

(1) Electrical characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that T_J = T_A. No assurance of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T_J > T_A. See Application and Implementation for information of temperature derating of the device. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.

(2) All limits are specified by testing or statistical analysis.

(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped production material.

(4) For specified temperature ranges, see input common mode voltage specifications.

(5) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of 45 mA over long term may adversely affect reliability.

6.8 Electrical Characteristics – 2.7 V (AC)

All limits ensured for T_J = 25°C, V⁺ = 2.7 V, V⁻ = 0 V, V_CM = 1 V, V_O = 1.35 V, and R_L > 1 MΩ (unless otherwise noted).⁽¹⁾

PARAMETER		TEST CONDITIONS	TYP⁽³⁾	UNIT
SR	Slew rate⁽⁴⁾		0.4	V/µs
GBW	Gain-bandwidth product		1.4	MHz
Φ_m	Phase margin		70	°
G_m	Gain margin		7.5	dB
e_n	Input-referred voltage noise	f = 10 kHz, V_CM = 0.5 V	57	nV/√Hz
i_n	Input-referred current noise	f = 10 kHz	0.08	pA/√Hz
THD	Total harmonic distortion	f = 1 kHz, A_V = +1, R_L = 600 Ω, V_IN = 1 V_PP	0.022%
	Amp-to-amp isolation⁽⁵⁾		123	dB

(1) Electrical characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that T_J = T_A. No assurance of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T_J > T_A. See Application and Implementation for information of temperature derating of the device. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.

(2) All limits are specified by testing or statistical analysis.

(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped production material.

(4) Connected as voltage follower with input step from V⁻ to V⁺. Number specified is the slower of the positive and negative slew rates.

(5) Input-referred, R_L = 100 kΩ connected to V⁺ / 2. Each amp excited in turn with 1 kHz to produce V_O = 3 V_PP (for supply voltages < 3 V, V_O = V⁺).

6.9 Electrical Characteristics – 5 V (DC)

All limits ensured for T_J = 25°C, V⁺ = 5 V, V⁻ = 0 V, V_CM = V⁺/ 2, V_O = V⁺/ 2, and R_L > 1 MΩ (unless otherwise noted).⁽¹⁾

PARAMETER		TEST CONDITIONS		MIN⁽²⁾	TYP⁽³⁾	MAX⁽²⁾	UNIT
V_OS	Input offset voltage	LMV611 (single)			1	4	mV
V_OS	Input offset voltage	LMV612 (dual) and LMV614 (quad)			1	5.5	mV
TCV_OS	Input offset voltage average drift				5.5		µV/°C
I_B	Input bias current				14	35	nA
I_OS	Input offset current				9		nA
I_S	Supply current (per channel)				116	210	µA
CMRR	Common-mode rejection ratio	0 V ≤ V_CM ≤ 3.8 V, 4.6 V ≤ V_CM ≤ 5 V⁽⁴⁾		60	86		dB
CMRR	Common-mode rejection ratio	–0.2 V ≤ V_CM ≤ 0 V 5 V ≤ V_CM ≤ 5.2 V		50	78		dB
PSRR	Power supply rejection ratio	1.8 V ≤ V⁺ ≤ 5 V, V_CM = 0.5 V			100		dB
CMVR	Input common-mode voltage	For CMRR range ≥ 50 dB	V^–, T_A = 25°C	V^– – 0.2	–0.2		V
			V⁺, T_A = 25°C		5.3	V⁺ + 0.2
			T_A = –40°C to 85°C	V^–		V⁺
			T_A = 125°C	V^– + 0.3		V⁺ – 0.3
A_V	Large signal voltage gain LMV611 (single)	R_L = 600 Ω to 2.5 V, V_O = 0.2 V to 4.8 V		88	102		dB
	Large signal voltage gain LMV611 (single)	R_L = 2 kΩ to 2.5 V, V_O = 0.2 V to 4.8 V		94	113
	Large signal voltage gain LMV612 (dual) and LMV614 (quad)	R_L = 600 Ω to 2.5 V, V_O = 0.2 V to 4.8 V		81	90
	Large signal voltage gain LMV612 (dual) and LMV614 (quad)	R_L = 2 kΩ to 2.5 V, V_O = 0.2 V to 4.8 V		85	100
V_O	Output swing	R_L = 600 Ω to 2.5 V		4.855	4.89		V
		V_IN = ±100 mV			0.12	0.16
		R_L = 2 kΩ to 2.5 V		4.945	4.967
		V_IN = ±100 mV			0.037	0.065
I_O	Output short-circuit current⁽⁵⁾	LMV611, Sourcing, V_O = 0 V, V_IN = 100 mV			100		mA
I_O	Output short-circuit current⁽⁵⁾	Sinking, V_O = 5 V, V_IN = –100 mV			65		mA

(1) Electrical characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that T_J = T_A. No assurance of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T_J > T_A. See Application and Implementation for information of temperature derating of the device. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.

(2) All limits are specified by testing or statistical analysis.

(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped production material.

(4) For specified temperature ranges, see Input common mode voltage specifications.

(5) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of 45 mA over long term may adversely affect reliability.

6.10 Electrical Characteristics – 5 V (AC)

All limits ensured for T_J = 25°C, V⁺ = 5 V, V⁻ = 0 V, V_CM = V⁺/ 2, V_O = 2.5 V, and R_L > 1 MΩ (unless otherwise noted).⁽¹⁾

PARAMETER		TEST CONDITIONS	TYP⁽³⁾	UNIT
SR	Slew rate⁽⁴⁾		0.42	V/µs
GBW	Gain-bandwidth product		1.5	MHz
Φ_m	Phase margin		71	°
G_m	Gain margin		8	dB
e_n	Input-referred voltage noise	f = 10 kHz, V_CM = 1 V	50	nV/√Hz
i_n	Input-referred current noise	f = 10 kHz	0.08	pA/√Hz
THD	Total harmonic distortion	f = 1 kHz, A_V = +1, R_L = 600 Ω, V_O = 1 V_PP	0.022%
	Amp-to-amp isolation⁽⁵⁾		123	dB

(1) Electrical characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that T_J = T_A. No assurance of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T_J > T_A. See Application and Implementation for information of temperature derating of the device. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.

(2) All limits are specified by testing or statistical analysis.

(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped production material.

(4) Connected as voltage follower with input step from V⁻ to V⁺. Number specified is the slower of the positive and negative slew rates.

(5) Input-referred, R_L = 100 kΩ connected to V⁺ / 2. Each amp excited in turn with 1 kHz to produce V_O = 3 V_PP (for supply voltages < 3 V, V_O = V⁺).