SNOSD09 September   2015 LMV7275-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings LMV7275-Q1
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  1.8-V Electrical Characteristics
    6. 6.6  1.8-V AC Electrical Characteristics
    7. 6.7  2.7-V Electrical Characteristics
    8. 6.8  2.7-V AC Electrical Characteristics
    9. 6.9  5-V Electrical Characteristics
    10. 6.10 5-V AC Electrical Characteristics
    11. 6.11 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Rail-to-Rail Input Stage
      2. 7.3.2 Output Stage
    4. 7.4 Device Functional Modes
      1. 7.4.1 Capacitive and Resistive Loads
      2. 7.4.2 Noise
      3. 7.4.3 Hysteresis
        1. 7.4.3.1 Non-inverting Comparator With Hysteresis
        2. 7.4.3.2 Inverting Comparator With Hysteresis
      4. 7.4.4 Zero Crossing Detector
        1. 7.4.4.1 Zero Crossing Detector With Hysteresis
      5. 7.4.5 Threshold Detector
      6. 7.4.6 Universal Logic Level Shifter
      7. 7.4.7 OR'ING the Output
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Square Wave Oscillator
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Positive Peak Detector
      3. 8.2.3 Negative Peak Detector
      4. 8.2.4 Window Detector
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Circuit Techniques for Avoiding Oscillations in Comparator Applications
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings (1)

MIN MAX UNIT
VIN Differential ±Supply Voltage V
Supply Voltage (V+ - V−) 6 V
Voltage at Input/Output pins (V−) − 0.1 (V+) + 0.1 V
Junction Temperature(2) 150 °C
Storage Temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The maximum power dissipation is a function of TJ(MAX), RθJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) - TA)/RθJA. All numbers apply for packages soldered directly into a PCB.

6.2 ESD Ratings LMV7275-Q1

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V
Charged-device model (CDM), per AEC Q100-011 ±1000
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

MIN MAX UNIT
Supply Voltage 1.8 5.5 V
Temperature(1) –40 85 °C
(1) The maximum power dissipation is a function of TJ(MAX), RθJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) - TA)/RθJA. All numbers apply for packages soldered directly into a PCB.

6.4 Thermal Information

THERMAL METRIC(1) LMV7275-Q1 UNIT
DGK (SC70)
5 PINS
RθJA Junction-to-ambient thermal resistance   (2) 273.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 106.1 °C/W
RθJB Junction-to-board thermal resistance 54.9 °C/W
ψJT Junction-to-top characterization parameter 3.6 °C/W
ψJB Junction-to-board characterization parameter 54.1 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.
(2) The maximum power dissipation is a function of TJ(MAX), RθJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) - TA)/RθJA. All numbers apply for packages soldered directly into a PCB.

6.5 1.8-V Electrical Characteristics

Unless otherwise specified, all limits ensured for TJ = 25°C, V+ = 1.8 V, V− = 0 V.
PARAMETER CONDITION MIN(2) TYP(1) MAX(2) UNIT
VOS Input Offset Voltage 0.3 4 mV
At the temperature extremes 6
TC VOS Input Offset Temperature Drift VCM = 0.9 V (3) 20 uV/°C
IB Input Bias Current 10 nA
IOS Input Offset Current 200 pA
IS Supply Current 9 12 µA
At the temperature extremes 14
ISC Output Short Circuit Current Sinking, VO = 0.9 V 4 6 mA
VOL Output Voltage Low IO = −0.5 mA 52 100 mV
IO = −1.5 mA 166 220
VCM Input Common-Mode Voltage Range CMRR > 45 dB −0.1 1.9 V
CMRR Common-Mode Rejection Ratio 0 < VCM < 1.8 V 46 78 dB
PSRR Power Supply Rejection Ratio V+ = 1.8 V to 5 V 55 80 dB
ILEAKAGE Output Leakage Current VO = 1.8 V 2 pA
(1) Typical values represent the most likely parametric norm.
(2) All limits are ensured by testing or statistical analysis.
(3) Offset Voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.

6.6 1.8-V AC Electrical Characteristics

Unless otherwise specified, all limits ensured for TJ = 25°C, V+ = 1.8 V, V− = 0 V, VCM = 0.5 V, VO = V+/2 and RL > 1 MΩ to V−.
PARAMETER CONDITION MIN(2) TYP(1) MAX(2) UNIT
tPHL Propagation Delay
(High to Low)		 Input Overdrive = 20 mV
Load = 50 pF//5 kΩ		 880 ns
Input Overdrive = 50 mV
Load = 50 pF//5 kΩ		 570 ns
tPLH Propagation Delay
(Low to High)		 Input Overdrive = 20 mV
Load = 50 pF//5 kΩ		 1100 ns
Input Overdrive = 50 mV
Load = 50 pF//5 kΩ		 800 ns

6.7 2.7-V Electrical Characteristics

Unless otherwise specified, all limits ensured for TJ = 25°C, V+ = 2.7 V, V− = 0 V.
PARAMETER CONDITIONS MIN(2) TYP(1) MAX(2) UNIT
VOS Input Offset Voltage 0.3 4 mV
At the temperature extremes 6
TC VOS Input Offset Temperature Drift VCM = 1.35 V(3) 20 µV/°C
IB Input Bias Current 10 nA
IOS Input offset Current 200 pA
IS Supply Current 9 13 µA
At the temperature extremes 15
ISC Output Short Circuit Current Sinking, VO = 1.35 V 10 15 mA
VOL Output Voltage Low IO = −0.5 mA 50 70 mV
IO = −2 mA 155 220
VCM Input Common Voltage Range CMRR > 45 dB −0.1 2.8 V
CMRR Common-Mode Rejection Ratio 0 < VCM < 2.7 V 46 78 dB
PSRR Power Supply Rejection Ratio V+ = 1.8 V to 5 V 55 80 dB
ILEAKAGE Output Leakage Current VO = 2.7 V 2 pA

6.8 2.7-V AC Electrical Characteristics

Unless otherwise specified, all limits ensured for TJ = 25°C, V+ = 2.7 V, V− = 0 V, VCM = 0.5 V, VO = V+/2 and RL > 1 MΩ to V−.
PARAMETER CONDITION MIN(2) TYP(1) MAX(2) UNIT
tPHL Propagation Delay
(High to Low)		 Input Overdrive = 20 mV
Load = 50 pF//5 kΩ		 1200 ns
Input Overdrive = 50 mV
Load = 50 pF//5 kΩ		 810 ns
tPLH Propagation Delay
(Low to High)		 Input Overdrive = 20 mV
Load = 50 pF//5 kΩ		 1300 ns
Input Overdrive = 50 mV
Load = 50 pF//5 kΩ		 860 ns

6.9 5-V Electrical Characteristics

Unless otherwise specified, all limits ensured for TJ = 25°C, V+ = 5 V, V− = 0 V.
PARAMETER CONDITIONS MIN(2) TYP(1) MAX(2) UNIT
VOS Input Offset Voltage 0.3 4 mV
At the temperature extremes 6
TC VOS Input Offset Temperature Drift VCM = 2.5 V(3) 20 µV/°C
IB Input Bias Current 10 nA
IOS Input Offset Current 200 pA
IS Supply Current 10 14 µA
16
At the temperature extremes
ISC Output Short Circuit Current Sinking, VO = 2.5 V 18 34 mA
VOL Output Voltage Low IO = −0.5 mA 27 70 mV
IO = −4.0 mA 225 315
VCM Input Common Voltage Range CMRR > 45 dB −0.1 5.1 V
CMRR Common-Mode Rejection Ratio 0 < VCM < 5.0 V 46 78 dB
PSRR Power Supply Rejection Ratio V+ = 1.8 V to 5 V 55 80 dB
ILEAKAGE Output Leakage Current VO = 5 V 2 pA

6.10 5-V AC Electrical Characteristics

Unless otherwise specified, all limits ensured for TJ = 25°C, V+ = 5.0 V, V− = 0 V, VCM = 0.5 V, VO = V+/2 and RL > 1 MΩ to V−.
PARAMETER CONDITION MIN(2) TYP(1) MAX(2) UNIT
tPHL Propagation Delay
(High to Low)		 Input Overdrive = 20 mV
Load = 50 pF//5 kΩ		 2100 ns
Input Overdrive = 50 mV
Load = 50 pF//5 kΩ		 1380 ns
tPLH Propagation Delay
(Low to High)		 Input Overdrive = 20 mV
Load = 50 pF//5 kΩ		 1800 ns
Input Overdrive = 50 mV
Load = 50 pF//5 kΩ		 1100 ns

6.11 Typical Characteristics

TA = 25°C, Unless otherwise specified.
LMV7275-Q1 20064028.gif Figure 1. VOS vs. VCM
LMV7275-Q1 20064030.gif Figure 3. VOS vs. VCM
LMV7275-Q1 20064002.gif Figure 5. Supply Current vs. Supply Voltage
LMV7275-Q1 20064036.gif Figure 7. Output Negative Swing vs. ISINK
LMV7275-Q1 20064039.gif Figure 9. Output Negative Swing vs. ISINK
LMV7275-Q1 20064018.gif Figure 11. Propagation Delay (tPHL)
LMV7275-Q1 20064020.gif Figure 13. Propagation Delay (tPHL)
LMV7275-Q1 20064022.gif Figure 15. Propagation Delay (tPHL)
LMV7275-Q1 20064049.gif Figure 17. tPLH vs. Overdrive
LMV7275-Q1 20064029.gif Figure 2. VOS vs. VCM
LMV7275-Q1 20064001.gif Figure 4. Short Circuit vs. Supply Voltage
LMV7275-Q1 20064034.gif Figure 6. Output Negative Swing vs. VSUPPLY
LMV7275-Q1 20064038.gif Figure 8. Output Negative Swing vs. ISINK
LMV7275-Q1 20064014.gif Figure 10. Propagation Delay (tPLH)
LMV7275-Q1 20064015.gif Figure 12. Propagation Delay (tPLH)
LMV7275-Q1 20064016.gif Figure 14. Propagation Delay (tPLH)
LMV7275-Q1 20064050.gif Figure 16. tPHL vs. Overdrive